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Journal of Experimental and Theoretical Physics Letters

Generation of nonclassical light upon resonant excitation of a semiconductor microcavity

M. V. Lebedev, A.L. Parakhonsky, A. A. Demenev

Published Oct 1, 2015• 3 citations
Publisher

Abstract

Strong correlations in the fluctuations of the intensity of emission from a semiconductor microcavity under resonant laser excitation are observed. The intensity correlation function exhibits an unusual oscillatory behavior with an unexpectedly long oscillation period and decay time. The visibility of the correlation function reaches 0.81. Long oscillation times are attributed to the Rabi frequency characterizing weak coupling between the electromagnetic field of the semiconductor microcavity mode and long-lived exciton states localized by the random potential of the quantum well. For a laser excitation power density of 400 W/cm 2 , the power density of the radiation emitted by the microcavity is 12 W/cm 2 , which corresponds to the total flux of nonclassical light of 1.5 × 10 15 photons/s from an excited spot 50 μm in diameter. Thus, a microcavity can serve as a bright emitter of nonclassical light.

DOI
10.1134/s0021364015200060

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Strong correlations in the fluctuations of the intensity of emission from a semiconductor microcavity under resonant laser excitation are observed. The intensity correlation function exhibits an unusual oscillatory behavior with an unexpectedly long oscillation period and decay time. The visibility of the correlation function reaches 0.81. Long oscillation times are attributed to the Rabi frequency characterizing weak coupling between the electromagnetic field of the semiconductor microcavity mode and long-lived exciton states localized by the random potential of the quantum well. For a laser excitation power density of 400 W/cm 2 , the power density of the radiation emitted by the microcavity is 12 W/cm 2 , which corresponds to the total flux of nonclassical light of 1.5 × 10 15 photons/s from an excited spot 50 μm in diameter. Thus, a microcavity can serve as a bright emitter of nonclassical light.
It was shown in JETP Lett. 102 , 508 (2015) that the intensity correlation function of the emission from a high-quality-factor semiconductor microcavity under resonant optical pumping exhibits an oscillatory behavior with an unexpectedly long oscillation period and a long decay time, which fall in the nanosecond range. A further investigation demonstrates that the origin of these oscillations is not related to the weak Rabi interaction between long-lived localized exciton states in the quantum well and the electromagnetic field of the microcavity mode. It proves that the semiconductor microcavity plays a secondary role in the observation of nonclassical light: it provides the spectral selection of the modes of the pump laser. We believe that intrinsic instabilities lead to the chaotic excitation of spiking in the laser modes under a constant operating current.
The correlation function of radiation from a high-quality semiconductor microcavity at the resonant laser excitation demonstrates oscillations with surprisingly long-period and damping times of a nanosecond range. It was shown that the oscillations are not attributed to weak Rabi interaction between long-lived exciton states and intracavity electromagnetic field. The study of a response with high spectral resolution had revealed that the oscillations arise if a spectral position as well as a period of longitudinal laser modes is similar to modulation components of a microcavity transmission spectrum.
We show that resonance fluorescence, i.e., the resonant emission of a coherently driven two-level system, can be realized with a semiconductor quantum dot. The dot is embedded in a planar optical microcavity and excited in a waveguide mode so as to discriminate its emission from residual laser scattering. The transition from the weak to the strong excitation regime is characterized by the emergence of oscillations in the first-order correlation function of the fluorescence, g(tau), as measured by interferometry. The measurements correspond to a Mollow triplet with a Rabi splitting of up to 13.3 microeV. Second-order correlation measurements further confirm nonclassical light emission.
We report on the optical response of a semiconductor microcavity featuring a strong exciton–photon coupling. The weak excitation regime is investigated experimentally by means of time-resolved transmission and four-wave mixing experiments. The influence of electronic disorder on the coherent exciton–photon dynamics is discussed in terms of the solutions of the Maxwell-Bloch equations. The high excitation regime is investigated by using transient sub-picosecond pump–probe experiments. Optical amplification of the probe beam (up to a factor of five), as well as a fundamental change of the optical spectra, have been found close to and above the exciton saturation density. The observed oscillations are corresponding to the Rabi frequency of the excitons in the pump field.
Recently, cavity quantum electrodynamic (QED) effects in semiconductor microcavities have been of considerable interest since, in the weak-coupling regime they play an important role in selectively increasing spontaneous emission into the lasing mode of vertical-cavity surface-emitting lasers (VCSEL’s) [1,2], enabling low-threshold, high speed, and high efficiency. In a strong-coupling regime, the normal modes of the coupled system are superpositions of the exciton and cavity modes. Hence the impulsively excited system will evolve in time with the energy oscillating between the exciton and cavity modes. This is known as a vacuum-Rabi oscillation (VRO), with a frequency of Ω=d¯⋅E¯/@@h, where d¯ is the transition dipole moment of atoms and E¯ the vacuum-field strength. Of course, VRO are observable only when the cavity lifetime and exciton dephasing time are long enough compared to VRO period. Recently, Weisbuch et al. [3] have reported an observation of the normal-mode vacuum Rabi splitting in 2-D-exciton/planar-DBR microcavities. The observed splittings were as large as 6 meV in reflection and transmission spectra, implying 690-fs vacuum Rabi oscillations.
We extend recently developed schemes for field quantization in absorbing dielectric media with local susceptibilities to dielectric systems described by a nonlocal susceptibility, in order to quantize the electromagnetic field in quantum wells embedded in planar semiconductor microcavities. As an application of the formalism, we analyze the effects of the propagation through a semiconductor microcavity on a continuous-mode squeezed coherent state. In particular, we calculate the variance of the field transmitted through the microcavity in the case of strong coupling regime for different detection schemes, as a function of the detuning, the exciton–photon coupling and the exciton homogeneous broadening.