Abstract The authors demonstrate pure triggered single‐photon emission from quantum dots (QDs) around the telecommunication C‐band window, with characteristics preserved under non‐resonant excitation at saturation, that is, the highest possible, lifetime‐limited emission rates. The direct measurement of emission dynamics reveals photoluminescence decay times in the range of (1.7–1.8) ns corresponding to maximal photon generation rates exceeding 0.5 GHz. The measurements of the second‐order correlation function exhibit, for the best case, a lack of coincidences at zero time delay—no multiple photon events are registered within the experimental accuracy. This is achieved by exploiting a new class of low‐density and in‐plane symmetric InAs/InP QDs grown by molecular beam epitaxy on a distributed Bragg reflector, perfectly suitable for non‐classical light generation for quantum optics experiments and quantum‐secured fiber‐based optical communication schemes.
Semiconductor quantum dots emitting in the telecommunication O- and C-bands are promising candidates as single-photon sources for fiber-based quantum communication. In this work, we show how coherent quasi-resonant and phonon-assisted excitation help reveal the intrinsic optical properties of InAs quantum dots embedded in relaxed InGaAs matrices on top of metamorphic InGaAs layers for achieving emission in the telecom bands. By systematically comparing excitation schemes, we separate excitation-induced effects from intrinsic emitter properties. This allows us to observe linewidths as narrow as 21
μeV, the disappearance of slow decay channels, and single-photon purity reaching second-order autocorrelation values in the order of
10−2. Photoluminescence excitation reveals higher excited states, enabling coherent control of trion transitions and the observation of Rabi-like oscillations in both telecom bands. These results confirm the promising potential of these quantum dots for applications in quantum technologies.
Non-classical photon sources made of semiconductor quantum dots (QDs) emitting in the telecommunication C-band are crucial components for low-loss, long-distance photonic quantum communication networks. Here we designed and fabricated strain--free In
0.7Ga
0.3As/In
0.7Al
0.3As QDs grown on GaAs(111)A substrates working as single-photon emitters in the 1550 nm window. The QDs were grown via local droplet etching method in a molecular beam epitaxy environment, employing a thin In
0.7Al
0.3As metamorphic buffer layer with the same lattice constant of the QD material, thus allowing for a completely strain--free self-assembly of the QDs. The QDs exhibit a C
3v symmetry with a ground state emission in the 1400--1600 nm range. The exciton lifetimes of
≈ 1.3--1.9 ns and linewidths as low as
≈ 300
μeV show the good quality of the fabricated QDs. Second-order autocorrelation measurements under pulsed excitation confirmed the single-photon purity of the emitters, yielding a
g(2)(0) value of
0.141±0.027Semiconductor quantum dots (QDs) enable the generation of single and entangled photons, useful for various applications in photonic quantum technologies. Specifically for quantum communication via fiber-optical networks, operation in the telecom C-band centered around 1550
nm is ideal. The direct generation of QD-photons in this spectral range and with high quantum-optical quality, however, remained challenging. Here, we demonstrate the coherent on-demand generation of indistinguishable photons in the telecom C-band from single QD devices consisting of InAs/InP QD-mesa structures heterogeneously integrated with a metallic reflector on a silicon wafer. Using pulsed two-photon resonant excitation of the biexciton-exciton radiative cascade, we observe Rabi rotations up to pulse areas of
4π and a high single-photon purity in terms of
g(2)(0)=0.005(1) and
0.015(1) for exciton and biexciton photons, respectively. Applying two independent experimental methods, based on fitting Rabi rotations in the emission intensity and performing photon cross-correlation measurements, we consistently obtain preparation fidelities at the
π-pulse exceeding 80
%. Finally, performing Hong-Ou-Mandel-type two-photon interference experiments we obtain a photon-indistinguishability of the full photon wave packet of up to
35(3)%, representing a significant advancement in the photon-indistinguishability of single photons emitted directly in the telecom C-band.
The development of quantum materials for single-photon emission is crucial for the advancement of quantum information technology. Although significant advancement has been witnessed in recent years for single photon sources in near infrared band (λ~700-1000 nm), several challenges have yet to be addressed for ideal single photon emission at the telecommunication band. In this study, we present a droplet-epitaxy strategy for O-band to C-band single-photon source based semiconductor quantum dots (QDs) using metal-organic vapor-phase epitaxy (MOVPE). Via investigating the growth conditions of the epitaxial process, we have successfully synthesized InAs/InP QDs with narrow emission lines spanning a broad spectral range of λ~1200-1600 nm. The morphological and optical properties of the samples were characterized using atomic force microscopy and micro photoluminescence spectroscopy. The recorded single-photon purity of a plain QD structure reaches (g(2)(0) = 0.16), with a radiative recombination lifetime as short as 1.5 ns. This work provides a crucial platform for future research on integrated microcavity enhancement techniques and coupled QDs with other quantum photonics in the telecom bands, offering significant prospects for quantum network applications.
High-performance solid-state quantum sources in the telecom band are of paramount importance for long-distance quantum communications and the quantum Internet by taking advantage of a low-loss optical fiber network. Here, we demonstrate bright telecom-wavelength single-photon sources based on In(Ga)As/GaAs quantum dots (QDs) deterministically coupled to hybrid circular Bragg resonators (h-CBRs) by using a wide-field fluorescence imaging technique. The QD emissions are redshifted toward the telecom O-band by using an ultra-low InAs growth rate and an InGaAs strain reducing layer. Single-photon emissions under both continuous wave (CW) and pulsed operations are demonstrated, showing high brightness with count rates of 1.14 MHz and 0.34 MHz under saturation powers and single-photon purities of g ( 2 ) ( 0 ) = 0.11 ± 0.02 (CW) and g ( 2 ) ( 0 ) = 0.087 ± 0.003 (pulsed) at low excitation powers. A Purcell factor of 4.2 with a collection efficiency of 11.2 % ± 1 % at the first lens is extracted, suggesting efficient coupling between the QD and h-CBR. Our work contributes to the development of highly efficient single-photon sources in the telecom band for fiber-based quantum communication and future distributed quantum networks.