The development of quantum materials for single-photon emission is crucial for the advancement of quantum information technology. Although significant advancement has been witnessed in recent years for single photon sources in near infrared band (λ~700-1000 nm), several challenges have yet to be addressed for ideal single photon emission at the telecommunication band. In this study, we present a droplet-epitaxy strategy for O-band to C-band single-photon source based semiconductor quantum dots (QDs) using metal-organic vapor-phase epitaxy (MOVPE). Via investigating the growth conditions of the epitaxial process, we have successfully synthesized InAs/InP QDs with narrow emission lines spanning a broad spectral range of λ~1200-1600 nm. The morphological and optical properties of the samples were characterized using atomic force microscopy and micro photoluminescence spectroscopy. The recorded single-photon purity of a plain QD structure reaches (g(2)(0) = 0.16), with a radiative recombination lifetime as short as 1.5 ns. This work provides a crucial platform for future research on integrated microcavity enhancement techniques and coupled QDs with other quantum photonics in the telecom bands, offering significant prospects for quantum network applications.
The development of quantum materials for single-photon emission is crucial for the advancement of quantum information technology. Although significant advancement has been witnessed in recent years for single photon sources in near infrared band (λ700-1000 nm), several challenges have yet to be addressed for ideal single photon emission at the telecommunication band. In this study, we present a droplet-epitaxy strategy for O-band to C-band single-photon source based semiconductor quantum dots (QDs) using metal-organic vapor-phase epitaxy (MOVPE). Via investigating the growth conditions of the epitaxial process, we have successfully synthesized InAs/InP QDs with narrow emission lines spanning a broad spectral range of λ1200-1600 nm. The morphological and optical properties of the samples were characterized using atomic force microscopy and micro photoluminescence spectroscopy. The recorded single-photon purity of a plain QD structure reaches (g(2)(0) = 0.16), with a radiative recombination lifetime as short as 1.5 ns. This work provides a crucial platform for future research on integrated microcavity enhancement techniques and coupled QDs with other quantum photonics in the telecom bands, offering significant prospects for quantum network applications.
Non-classical photon sources made of semiconductor quantum dots (QDs) emitting in the telecommunication C-band are crucial components for low-loss, long-distance photonic quantum communication networks. Here we designed and fabricated strain--free In0.7Ga0.3As/In0.7Al0.3As QDs grown on GaAs(111)A substrates working as single-photon emitters in the 1550 nm window. The QDs were grown via local droplet etching method in a molecular beam epitaxy environment, employing a thin In0.7Al0.3As metamorphic buffer layer with the same lattice constant of the QD material, thus allowing for a completely strain--free self-assembly of the QDs. The QDs exhibit a C3v symmetry with a ground state emission in the 1400--1600 nm range. The exciton lifetimes of ≈ 1.3--1.9 ns and linewidths as low as ≈ 300 μeV show the good quality of the fabricated QDs. Second-order autocorrelation measurements under pulsed excitation confirmed the single-photon purity of the emitters, yielding a g(2)(0) value of 0.141±0.027
Semiconductor quantum dots (QDs) are well established as sub-Poissonian sources of entangled photon pairs. To improve the utility of a QD light source, it would be advantageous to extend their emission further into the near infrared, into the low absorption wavelength windows utilised in long-haul optical telecommunication. Initial experiments succeeded in interfering O-band (1260—1360 nm) photons from an InAs/GaAs QD with dissimilar photons from a laser, an important mechanism for quantum teleportation. Interference visibilities as high as 60 ± 6 % were recorded, surpassing the 50 % threshold imposed by classical electrodynamics. Later, polarisation-entanglement of a similar QD was observed, with pairs of telecom-wavelength photons from the radiative cascade of the biexciton state exhibiting fidelities of 92.0 ± 0.2 % to the Bell state. Subsequently, an O-band telecom-wavelength quantum relay was realised. Again using an InAs/GaAs QD device, this represents the first implementation of a sub-Poissonian telecom-wavelength quantum relay, to the best knowledge of the author. The relay proved capable of implementing the famous four-state BB84 protocol, with a mean teleportation fidelity as high as 94.5 ± 2.2 %, which would contribute 0.385 secure bits per teleported qubit. After characterisation by way of quantum process tomography, the performance of the relay was also evaluated to be capable of implementing a six-state QKD protocol. In an effort to further extend the emitted light from a QD into the telecom C-band (1530—1565 nm), alternative material systems were investigated. InAs QDs on a substrate of InP were shown to emit much more readily in the fibre-telecom O- and C-bands than their InAs/GaAs counterparts, largely due to the reduced lattice mismatch between the QD and substrate for InAs/InP (~3 %) compared to InAs/GaAs (~7 %). Additionally, to minimize the fine structure splitting (FSS) of the exciton level, which deteriorates the observed polarisation-entanglement, a new mode of dot growth was investigated. Known as droplet epitaxy (D-E), QDs grown in this mode showed a fourfold reduction in the FSS compared to dots grown in the Stranski-Krastanow mode. This improvement would allow observation of polarisation-entanglement in the telecom C-band. In subsequent work performed by colleagues at the Toshiba Cambridge Research Labs, these D-E QDs were embedded in a p-i-n doped optical cavity, processed with electrical contacts, and found to emit entangled pairs of photons under electrical excitation. The work of this thesis provides considerable technological advances to the field of entangled-light sources, that in the near future may allow for deterministic quantum repeaters operating at megahertz rates, and in the further future could facilitate the distribution of coherent multipartite states across a distributed quantum network.
Quantum communication networks are formed of secure links, where information can be transmitted with security guaranteed by the quantum nature of light. An essential building block of such a network is a source of single photons and entangled photon pairs, compatible with the low-loss fibre telecom window around 1550 nm. Previous work based on semiconductor quantum dots (QDs), colour centres in diamond and single atoms has been limited by emission wavelengths unsuitable for long distance applications. Efforts have been made to use standard gallium arsenide based QDs by extending their operating wavelength range, however, electrically driven quantum light emission from quantum dots in this telecommunication window has not yet been demonstrated. In this work, indium phosphide based QD devices have been developed to address this problem. The industry favoured growth method, metalorganic vapour phase epitaxy (MOVPE), has been used to create droplet QDs with low fine structure splitting (FSS). This growth scheme allows us to produce the first optoelectronic devices for single and entangled photon emission in the 1550 nm telecom window. We show single-photon emission with multi-photon events suppressed to 0.11±0.02. Furthermore, we obtain entangled light from the biexciton cascade with a maximum fidelity of 0.87± 0.04 which is sufficient for error correction protocols. We also show extended device operating temperature up to 93 K, allowing operation with liquid nitrogen or simple closed-cycle coolers. Our device can be directly integrated with existing long distance quantum communication, cryptography and quantum relay systems providing a new platform for developing quantum networks.
In this work, we demonstrate a triggered single-photon source operating at the telecom C-band with photon extraction efficiency exceeding any reported values in this range. The non-classical light emission with low probability of the multiphoton events is realized with single InAs quantum dots (QDs) grown by molecular beam epitaxy and embedded directly in an InP matrix. Low QD spatial density on the order of 5 × 108 cm−2 to ∼2 × 109 cm−2 and symmetric shape of these nanostructures together with spectral range of emission make them relevant for quantum communication applications. The engineering of extraction efficiency is realized by combining a bottom distributed Bragg reflector consisting of 25 pairs of InP/In0.53Ga0.37Al0.1 As layers and cylindrical photonic confinement structures. Realization of such a technologically non-demanding approach even in a non-deterministic fashion results in photon extraction efficiency of (13.3 ± 2) % into 0.4 numerical aperture detection optics at approximately 1560 nm emission wavelength, i.e., close to the center of the telecom C-band.
We investigate the spin properties of InAs/InGaAs/InP quantum dots grown by metalorganic vapor-phase epitaxy (MOVPE) deposition using droplet epitaxy, which emits in the telecom C band. Using pump-probe Faraday ellipticity measurements, we determine electron and hole g factors of | g e | = 0.93 and | g h | = 0.47 , with the electron g factor being nearly twice as low as typical molecular beam epitaxy Stranski-Krastanov (SK) grown samples. Most significantly, we measure a longitudinal spin relaxation time T 1 = 3.0 µ s , representing an order of magnitude improvement over comparable MBE SK grown samples. Despite significant electron g -factor anisotropy, we observed that it is reduced relative to similar material composition samples grown with MBE or MOVPE SK methods. We attribute this g -factor anisotropy and spin lifetime improvements to the enhanced structural symmetry achieved via MOVPE droplet epitaxy, which mitigates the inherent structural asymmetry in strain-driven growth approaches for InAs/InP quantum dots. These results demonstrate that MOVPE droplet epitaxy-grown InAs/InGaAs/InP quantum dots exhibit favorable spin properties for potential implementation in quantum information applications.
The ability of two photons to interfere lies at the heart of many photonic quantum networking concepts and requires that the photons are indistinguishable with sufficient coherence times to resolve the interference signals. However, for solid-state quantum light sources, this can be challenging to achieve as they are in constant interaction with noise sources in their environment. Here, we investigate the noise sources that affect InAs/InP quantum dots emitting in the telecom C-band by comparing their behavior on a wetting layer for Stranski–Krastanov grown quantum dots with a nearly wetting layer-free environment achieved with the droplet epitaxy growth mode. We show that the droplet epitaxy growth mode is beneficial for a quiet environment, leading to 96% of exciton transitions having a coherence time longer than the typical detector resolution of 100 ps, even under non-resonant excitation. We also show that the decay profile indicates the presence of slow dephasing processes, which can be compensated for experimentally. We finally conduct Hong–Ou–Mandel interference measurements between subsequently emitted photons and find a corrected two-photon interference visibility of 98.6 ± 1.6% for droplet-epitaxy grown quantum dots. The understanding of the influence of their surroundings on the quantum optical properties of these emitters is important for their optimization and use in future quantum networking applications.