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Advanced Quantum Technologies

High‐Purity Triggered Single‐Photon Emission from Symmetric Single InAs/InP Quantum Dots around the Telecom C‐Band Window

Anna Musiał, Paweł Holewa, Paweł Wyborski, M. Syperek, Andrei Kors, Johann Peter Reithmaier, Grzegorz Sek, Mohamed Benyoucef

Published Nov 7, 2019• 60 citations
Publisher

Abstract

Abstract The authors demonstrate pure triggered single‐photon emission from quantum dots (QDs) around the telecommunication C‐band window, with characteristics preserved under non‐resonant excitation at saturation, that is, the highest possible, lifetime‐limited emission rates. The direct measurement of emission dynamics reveals photoluminescence decay times in the range of (1.7–1.8) ns corresponding to maximal photon generation rates exceeding 0.5 GHz. The measurements of the second‐order correlation function exhibit, for the best case, a lack of coincidences at zero time delay—no multiple photon events are registered within the experimental accuracy. This is achieved by exploiting a new class of low‐density and in‐plane symmetric InAs/InP QDs grown by molecular beam epitaxy on a distributed Bragg reflector, perfectly suitable for non‐classical light generation for quantum optics experiments and quantum‐secured fiber‐based optical communication schemes.

DOI
10.1002/qute.201900082

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On-Demand Generation of Indistinguishable Photons in the Telecom C-Band Using Quantum Dot Devices

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High Resolution Image Download MS PowerPoint Slide Semiconductor quantum dots (QDs) enable the generation of single and entangled photons, which are useful for various applications in photonic quantum technologies. Specifically for quantum communication via fiber-optical networks, operation in the telecom C-band centered around 1550 nm is ideal. The direct generation of QD-photons in this spectral range with high quantum-optical quality, however, remained challenging. Here, we demonstrate the coherent on-demand generation of indistinguishable photons in the telecom C-band from single QD devices consisting of InAs/InP QD-mesa structures heterogeneously integrated with a metallic reflector on a silicon wafer. Using pulsed two-photon resonant excitation of the biexciton–exciton radiative cascade, we observe Rabi rotations up to pulse areas of 4π and a high single-photon purity in terms of g (2) (0) = 0.005(1) and 0.015(1) for exciton and biexciton photons, respectively. Applying two independent experimental methods, based on fitting Rabi rotations in the emission intensity and performing photon cross-correlation measurements, we consistently obtain preparation fidelities at the π-pulse exceeding 80%. Finally, performing Hong–Ou–Mandel-type two-photon interference experiments, we obtain a photon-indistinguishability of the full photon wave packet of up to 35(3)%, representing a significant advancement in the photon-indistinguishability of single photons emitted directly in the telecom C-band.

ACS Photonics•Jan 23, 2024•49 citations
Abstract The authors demonstrate pure triggered single‐photon emission from quantum dots (QDs) around the telecommunication C‐band window, with characteristics preserved under non‐resonant excitation at saturation, that is, the highest possible, lifetime‐limited emission rates. The direct measurement of emission dynamics reveals photoluminescence decay times in the range of (1.7–1.8) ns corresponding to maximal photon generation rates exceeding 0.5 GHz. The measurements of the second‐order correlation function exhibit, for the best case, a lack of coincidences at zero time delay—no multiple photon events are registered within the experimental accuracy. This is achieved by exploiting a new class of low‐density and in‐plane symmetric InAs/InP QDs grown by molecular beam epitaxy on a distributed Bragg reflector, perfectly suitable for non‐classical light generation for quantum optics experiments and quantum‐secured fiber‐based optical communication schemes.
In this work, we demonstrate a triggered single-photon source operating at the telecom C-band with photon extraction efficiency exceeding any reported values in this range. The non-classical light emission with low probability of the multiphoton events is realized with single InAs quantum dots (QDs) grown by molecular beam epitaxy and embedded directly in an InP matrix. Low QD spatial density on the order of 5 × 108 cm−2 to ∼2 × 109 cm−2 and symmetric shape of these nanostructures together with spectral range of emission make them relevant for quantum communication applications. The engineering of extraction efficiency is realized by combining a bottom distributed Bragg reflector consisting of 25 pairs of InP/In0.53Ga0.37Al0.1 As layers and cylindrical photonic confinement structures. Realization of such a technologically non-demanding approach even in a non-deterministic fashion results in photon extraction efficiency of (13.3 ± 2) % into 0.4 numerical aperture detection optics at approximately 1560 nm emission wavelength, i.e., close to the center of the telecom C-band.
Abstract Two‐photon interference from an InAs/InAlGaAs quantum dot (QD) emitting in the telecom C‐band with a raw two‐photon interference visibility of % is demonstrated. This is achieved by a two‐fold approach: an improvement of the molecular beam epitaxial growth for better QDs, and integration of the QDs into an optical circular Bragg grating resonator for a Purcell enhancement of the radiative decay rate. The quantum optical properties of the fabricated device are studied by means of time‐correlated single‐photon counting under quasi‐resonant excitation of the charged exciton line. A reduced lifetime of ps is found corresponding to a Purcell factor of F p ≧ . Pronounced anti‐bunching of the second‐order autocorrelation function at zero time delay confirms the single‐photon emission character. The two‐photon interference is demonstrated with an unbalanced Mach‐Zehnder interferometer in the Hong‐Ou‐Mandel configuration. Strategies are discussed on how to further improve the indistinguishability, and provide a survey of the state‐of‐the‐art.
We report on the experimental demonstration of triggered single-photon emission at the telecom O-band from In(Ga)As/GaAs quantum dots (QDs) grown by metal-organic vapor-phase epitaxy. Micro-photoluminescence excitation experiments allowed us to identify the p-shell excitonic states in agreement with high excitation photoluminescence on the ensemble of QDs. Hereby we drive an O-band-emitting GaAs-based QD into the p-shell states to get a triggered single photon source of high purity. Applying pulsed p-shell resonant excitation results in strong suppression of multiphoton events evidenced by the as measured value of the second-order correlation function at zero delay of 0.03 (and ~0.005 after background correction).
Semiconductor quantum dots (QDs) enable the generation of single and entangled photons, useful for various applications in photonic quantum technologies. Specifically for quantum communication via fiber-optical networks, operation in the telecom C-band centered around 1550 \,nm is ideal. The direct generation of QD-photons in this spectral range and with high quantum-optical quality, however, remained challenging. Here, we demonstrate the coherent on-demand generation of indistinguishable photons in the telecom C-band from single QD devices consisting of InAs/InP QD-mesa structures heterogeneously integrated with a metallic reflector on a silicon wafer. Using pulsed two-photon resonant excitation of the biexciton-exciton radiative cascade, we observe Rabi rotations up to pulse areas of 4π4π4π and a high single-photon purity in terms of g(2)(0)=0.005(1)g^{(2)}(0)=0.005(1)g(2)(0)=0.005(1) and 0.015(1)0.015(1)0.015(1) for exciton and biexciton photons, respectively. Applying two independent experimental methods, based on fitting Rabi rotations in the emission intensity and performing photon cross-correlation measurements, we consistently obtain preparation fidelities at the πππ-pulse exceeding 80%\%%. Finally, performing Hong-Ou-Mandel-type two-photon interference experiments we obtain a photon-indistinguishability of the full photon wave packet of up to 35(3)%35(3)\%35(3)%, representing a significant advancement in the photon-indistinguishability of single photons emitted directly in the telecom C-band.
Non-classical photon sources made of semiconductor quantum dots (QDs) emitting in the telecommunication C-band are crucial components for low-loss, long-distance photonic quantum communication networks. Here we designed and fabricated strain--free In0.7_{0.7}0.7​Ga0.3_{0.3}0.3​As/In0.7_{0.7}0.7​Al0.3_{0.3}0.3​As QDs grown on GaAs(111)A substrates working as single-photon emitters in the 1550 nm window. The QDs were grown via local droplet etching method in a molecular beam epitaxy environment, employing a thin In0.7_{0.7}0.7​Al0.3_{0.3}0.3​As metamorphic buffer layer with the same lattice constant of the QD material, thus allowing for a completely strain--free self-assembly of the QDs. The QDs exhibit a C3v_{3v}3v​ symmetry with a ground state emission in the 1400--1600 nm range. The exciton lifetimes of ≈\approx≈ 1.3--1.9 ns and linewidths as low as ≈\approx≈ 300 μμμeV show the good quality of the fabricated QDs. Second-order autocorrelation measurements under pulsed excitation confirmed the single-photon purity of the emitters, yielding a g(2)(0)g^{(2)}(0)g(2)(0) value of 0.141±0.0270.141 \pm 0.0270.141±0.027
High Resolution Image Download MS PowerPoint Slide Semiconductor quantum dots (QDs) enable the generation of single and entangled photons, which are useful for various applications in photonic quantum technologies. Specifically for quantum communication via fiber-optical networks, operation in the telecom C-band centered around 1550 nm is ideal. The direct generation of QD-photons in this spectral range with high quantum-optical quality, however, remained challenging. Here, we demonstrate the coherent on-demand generation of indistinguishable photons in the telecom C-band from single QD devices consisting of InAs/InP QD-mesa structures heterogeneously integrated with a metallic reflector on a silicon wafer. Using pulsed two-photon resonant excitation of the biexciton–exciton radiative cascade, we observe Rabi rotations up to pulse areas of 4π and a high single-photon purity in terms of g (2) (0) = 0.005(1) and 0.015(1) for exciton and biexciton photons, respectively. Applying two independent experimental methods, based on fitting Rabi rotations in the emission intensity and performing photon cross-correlation measurements, we consistently obtain preparation fidelities at the π-pulse exceeding 80%. Finally, performing Hong–Ou–Mandel-type two-photon interference experiments, we obtain a photon-indistinguishability of the full photon wave packet of up to 35(3)%, representing a significant advancement in the photon-indistinguishability of single photons emitted directly in the telecom C-band.