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Exploring the silicon vacancy centre in CVD grown nanodiamond for near-resonant optical trapping

Matthew van Breugel

Published Aug 11, 2016• 0 citations
Publisher

Abstract

The focus of this thesis is the fabrication of diamond nanocrystals containing many Silicon Vacancy (SiV) centres. Firstly, we grow via chemical vapour deposition (CVD) a 200−µmthick diamond film on a silicon substrate. From this film, we produce diamond nanocrystals by means of ball milling. We characterize the physical and optical properties of the nanodia- mond sample with a lab-built integrated confocal and atomic force microscope. We find thatthe fabricated nanodiamonds have an average size of ∼160 nm and contain SiV centres witha zero phonon line centred at 739 nm and an average inhomogeneus spectral line broadening of ∼12 nm. Secondly, we employ the fabricated nanodiamonds containing SiV centres to investigate a new type of optical trapping in liquid. This method exploits near-resonant dipole forces due to the atomic transition of the SiV centres and results in detuning-dependent attractiveand repulsive forces in the vicinity of the atomic transition.

DOI
10.25949/19443413

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The focus of this thesis is the fabrication of diamond nanocrystals containing many Silicon Vacancy (SiV) centres. Firstly, we grow via chemical vapour deposition (CVD) a 200−µmthick diamond film on a silicon substrate. From this film, we produce diamond nanocrystals by means of ball milling. We characterize the physical and optical properties of the nanodia- mond sample with a lab-built integrated confocal and atomic force microscope. We find thatthe fabricated nanodiamonds have an average size of ∼160 nm and contain SiV centres witha zero phonon line centred at 739 nm and an average inhomogeneus spectral line broadening of ∼12 nm. Secondly, we employ the fabricated nanodiamonds containing SiV centres to investigate a new type of optical trapping in liquid. This method exploits near-resonant dipole forces due to the atomic transition of the SiV centres and results in detuning-dependent attractiveand repulsive forces in the vicinity of the atomic transition.
The properties of the negatively charged silicon-vacancy (SiV) centre in diamond were investigated in this thesis. Polarisation measurements revealed transition dipoles and the symmetry groups of the centre. In a diamond grown by chemical vapour deposition, a high spectral overlap of SiV centres with nearly transform limited optical line widths was found pointing to a low sensitivity of SiV centres to both strain and local electric fields. This low inhomogeneous distribution allowed for a quantum interference leading to a contrast of over 70 % in a Hong-Ou-Mandel experiment. Additionally, an isotopic shift at single site level could be confirmed and than used to identify the 64meV peak in the phonon sideband as a local vibrational mode. A low temperature investigation of optical line width and orbital relaxation time indicated a direct single-phonon process between the orbital states while at higher temperatures a two-phonon dephasing was found to be the main electron-phonon process. The results were consistently described by the microscopic model developed and additional strength was added by consistent studies of spin-orbit splitting and optical lifetime. By applying a magnetic field the spin degeneracy in the ground state was lifted allowing for spin initialisation with over 95 % fidelity with a spin relaxation time of over 2 milliseconds. Two resonant lasers were used to demonstrate coherent population trapping leading to a coherence time in the order of the orbital relaxation time. The coherence was concluded to be limited by orbital dephasing processes and we propose techniques to overcome them. One of them is to use nanodiamonds with a size smaller than half the phonon wavelength to suppress the dephasing process. Investigating the spectral properties at cryogenic temperatures, nearly lifetime limited line widths have been found, making these nanodiamonds good candidates for further spin applications with SiV centres.
This thesis is focused on the production and characterization of diamond films and diamond nanoparticles containing custom colour centres. These defects intentionally created into the diamond lattice are promising candidates for single photon sources, and are becoming more important for quantum information technologies as photons can carry quantum information over long distances. With outstanding properties such as up to 80% of the photons emitted into the zero phonon line (ZPL), single photon count rates up to several Mcps under continuous excitation and a narrow ZPL at room temperature, the SiV centre has recently attracted more attention. Although different approaches for the creation of colour centres have been reported, this thesis details the creation of SiV centres by chemical vapour deposition. Colour centres are created through the incorporation of impurities during diamond growth. While Si doping can easily be achieved due to plasma etching of Si substrates or the incorporation of a Si solid source inside the reactor vacuum chamber, controlling the exact amount of Si present in the gas phase or effectively incorporated is still a handicap. Chapters five and six show comprehensive studies performed towards the creation of diamond nanoparticles with single emitters. Control over the Si content within the gas phase is achieved using silane as gas source. The subsequent milling of the diamond films hosting the SiV centres and their inclusion into a stable solution, will facilitate SiV coupling and incorporation into cavities or emission-enhancer devices.
We experimentally demonstrate the integration of silicon-vacancy centers in nanodiamonds (SiV-NDs) with an optical nanofiber (ONF). We grow SiV-NDs on seed NDs dispersed on a quartz substrate using a microwave plasma-assisted chemical vapor deposition method. First, we search and characterize SiV-NDs on a quartz substrate using an inverted confocal microscope and an atomic force microscope (AFM). Subsequently, we pick up SiV-NDs from the quartz substrate and deposit them on the surface of a free-standing ONF using the AFM tip. The fluorescence emission spectrum, photon count rate, and intensity correlations for SiV-NDs are systematically measured.
We report on a new regime for optical trapping of diamond nanoparticles in liquid. While holding a nanodiamond (~150 nm) containing many NV centres (~10^3) at the focus of classical optical tweezers, we add a second laser slightly detuned from the dipole transition of the NVs. We measure a change in trap stiffness of ~10%. Remarkably, we show that our results must include collective effects – ‘superradiance’ – between colour centres, which has never been reported before for solid-state systems at room temperature. We discuss how these resonant forces depend on (and can be enhanced by) the type, number, dipole strength and spectral linewidth of the centres.
Abstract Properties of silicon-vacancy (SiV) colour centres in ultra-nanosize diamonds are studied. Nanodiamonds are obtained at a high temperature and pressure, which induced transformations in mixtures of organic and hetero-organic compounds without metal-catalysts. The size distribution of grown nanodiamonds is determined by the methods of transmission electron microscopy and atomic-force microscopy, as well as by using the model of phonon spatial localisation. In addition, Raman spectra of various nanodiamonds and luminescence properties of SiV-centres are investigated.
We introduce a process for the fabrication of high-quality, spatially isolated nano-diamonds on iridium via microwave-plasma-assisted chemical vapour deposition (CVD) growth. We perform spectroscopy of single silicon-vacancy (SiV) centres produced during the growth of the nano-diamonds. The colour centres exhibit extraordinary narrow zero-phonon-lines down to 0.7 nm at room temperature. Single photon count rates up to 4.8 Mcps at saturation make these SiV centres the brightest diamond-based single photon sources to date. We measure for the first time the fine structure of a single SiV centre, thus confirming the atomic composition of the investigated colour centres.