Nanodiamonds with SiV colour centres for quantum technologies
Anton I. Zeleneev, Stepan V. Bolshedvorskii, Vladimir V. Soshenko, Olga R. Rubinas, Anastasiia S. Garanina, Sergey G. Lyapin, V. Agafonov, Rustem E. Uzbekov, Oleg S. Kudryavtsev, Vadim N. Sorokin, Andrey N. Smolyaninov, Валерий Александрович Давыдов, Alexey V. Akimov
Abstract Properties of silicon-vacancy (SiV) colour centres in ultra-nanosize diamonds are studied. Nanodiamonds are obtained at a high temperature and pressure, which induced transformations in mixtures of organic and hetero-organic compounds without metal-catalysts. The size distribution of grown nanodiamonds is determined by the methods of transmission electron microscopy and atomic-force microscopy, as well as by using the model of phonon spatial localisation. In addition, Raman spectra of various nanodiamonds and luminescence properties of SiV-centres are investigated.
Abstract Properties of silicon-vacancy (SiV) colour centres in ultra-nanosize diamonds are studied. Nanodiamonds are obtained at a high temperature and pressure, which induced transformations in mixtures of organic and hetero-organic compounds without metal-catalysts. The size distribution of grown nanodiamonds is determined by the methods of transmission electron microscopy and atomic-force microscopy, as well as by using the model of phonon spatial localisation. In addition, Raman spectra of various nanodiamonds and luminescence properties of SiV-centres are investigated.
Silicon-vacancy (SiV) color centers in diamond offer a promising system for quantum information applications owing to their intense narrowband emission and optically detectable spin states. Here, the fluorescent properties of ensembles and single SiV centers in diamonds obtained by high-pressure high-temperature synthesis from adamantane (below referred to as adamantane diamonds) are investigated at liquid-helium temperatures. Ensembles of SiV centers (~10 3 ) are studied in large diamond crystals (1–2 µm in size). Despite the large number of excited centers, the fine structure of the zero-phonon line, corresponding to four allowed optical transitions between the ground- and excited-state doublets of the SiV center, can be observed in the fluorescence spectra of these crystals. The width of individual lines is in the range of 60–80 GHz, which is explained by their inhomogeneous broadening. Single SiV centers are studied in diamond crystallites with sizes of about 200 nm. The width of the narrowest transition lines observed in the fluorescence spectra of single SiV centers under resonant excitation is almost three orders of magnitude smaller than linewidths in the spectra of SiV ensembles and is as small as 94 MHz; i.e., these lines are so narrow that their width is determined by the lifetime of the upper state of the transition. Therefore, adamantane nanodiamond features the narrowest emission line width of a single SiV center at cryogenic temperatures among other types of SiV-con-taining nanodiamonds of similar sizes obtained by the high-pressure high-temperature and chemical vapor deposition techniques.
Diamonds and nanodiamonds (NDs) containing quantum color centers, such as nitrogen-vacancy (NV) centers, have been widely studied in recent years for their promising applications across various fields, including cryptography and telecommunications, medical sciences, and sensing. In the context of sensing, recent studies on color centers such as silicon-vacancy (SiV) and germanium-vacancy (GeV) centers have shown great potential for measuring physical quantities like magnetic fields, temperature, and strain. This is due to their intense zero-phonon line (ZPL) optical signal, which accounts for about 80% of their total luminescence and is characteristic of group-IV color centers (G4V) [1]. In our recent papers, we demonstrated that as-grown CVD NDs containing SiV and GeV centers, featuring luminescent ZPLs and excellent photostability at room temperature, can function effectively as nanosensors under high stress and pressure conditions (up to 180 GPa) [2, 3]. To advance our research, in this work we investigate the optical properties of SiV centers in as-grown NDs at cryogenic temperatures. For SiV centers, which have spin 1/2, the fine structure should become accessible through the Jahn-Teller effect, which lifts the degeneracy at cryogenic temperatures (< 20 K). However, experiments on our as-grown NDs reveal significant spectral broadening even at around 9 K, caused by lattice strain, which prevents access to the optically addressable electronic spin states of the SiV center. To overcome this limitation, we propose an original post-treatment involving high-pressure and high-temperature (HPHT) annealing using the Paris–Edinburgh press. This approach allows the gradual increase of temperature and pressure allows for control over the undesired diamond-to-graphite phase transition. HPHT annealing experiments were conducted at the PSICHE beamline of Synchrotron SOLEIL [4], where X-ray diffraction and tomography analyses enabled precise monitoring of P-T parameters and made it possible for the first time to access single fine-structure transitions of SiV centers in such NDs.References[1] C. Bradac, et al., Nat. Commun. 10, 1 (2019). [2] B. Vindolet, et al., Phys. Rev. B 106, 214109 (2022).[3] M. De Feudis, et al., Adv. Mater. Interfaces 7, 1901408 (2019).[4] L. Henry et al., J. Synchrotron Rad. 29 (2022).
We study single silicon vacancy (SiV) centres in chemical vapour deposition (CVD) nanodiamonds on iridium as well as an ensemble of SiV centres in a high-quality, low-stress CVD diamond film by using temperature-dependent luminescence spectroscopy in the temperature range 5–295 K. We investigate in detail the temperature-dependent fine structure of the zero-phonon line (ZPL) of the SiV centres. The ZPL transition is affected by inhomogeneous as well as temperature-dependent homogeneous broadening and blue shifts by about 20 cm −1 upon cooling from room temperature to 5 K. We employ excitation power-dependent g (2) measurements to explore the temperature-dependent internal population dynamics of single SiV centres and infer mostly temperature-independent dynamics.
Progress in controlling diamond synthesis has made it possible to produce very pure crystals and to incorporate and control atomic impurities and carbon vacancies in the crystal lattice. The appropriate impurity-vacancy combinations can give rise to special defects known as color centers, such as the nitrogen-vacancy (NV) or the silicon-vacancy (SiV), which exhibit exceptional quantum properties with spins that are optically addressable. The use of diamond containing color centers has paved the way for the development of innovative quantum technologies, such as very high-resolution magnetometry and quantum information processing. Nevertheless, the development of quantum sensors at the nanometric scale remains one of the most interesting challenges. In this context, the development of a reliable nanoparticle synthesis technique that allows the desired defects to be incorporated and their quantum optical properties to be modulated is crucial. In this seminar, an efficient and recent method to produce diamond nanoparticles containing NV, SiV and germanium-vacancy (GeV) centers is proposed through direct plasma assisted chemical vapour deposition (CVD) growth. This technique allows good control of both nanoparticle growth processes and color centers formation. The optimization of the CVD nanodiamond growth process is presented, showing the impact of different plasma parameters and gas phasecomposition on nanoparticle crystallinity, size and shape. Morphological characterizations reveal the production of small (around 100 nm) and well faceted nanodiamond particles. In addition, the SiV and GeV color centers incorporation can be tuned within this material by varying the gas phase composition which emphasizes the high flexibility of the CVD growth technique. Finally, the quantum properties of the incorporated color centers have been successfully investigated under extreme pressure conditions (up to ~ 180 GPa) showing a monotonic blue shift of their optical zero-phonon line. Since their luminescence remains stable, SiV and GeV centers emerge as high-pressure nanosensors.
The focus of this thesis is the fabrication of diamond nanocrystals containing many Silicon Vacancy (SiV) centres. Firstly, we grow via chemical vapour deposition (CVD) a 200−µmthick diamond film on a silicon substrate. From this film, we produce diamond nanocrystals by means of ball milling. We characterize the physical and optical properties of the nanodia- mond sample with a lab-built integrated confocal and atomic force microscope. We find thatthe fabricated nanodiamonds have an average size of ∼160 nm and contain SiV centres witha zero phonon line centred at 739 nm and an average inhomogeneus spectral line broadening of ∼12 nm. Secondly, we employ the fabricated nanodiamonds containing SiV centres to investigate a new type of optical trapping in liquid. This method exploits near-resonant dipole forces due to the atomic transition of the SiV centres and results in detuning-dependent attractiveand repulsive forces in the vicinity of the atomic transition.
Ultrasmall (about 10 nm), low-strain, artificially produced diamonds with an internal, active color center have substantial potential for quantum information processing and biomedical applications. Thus, it is of great importance to be able to artificially produce such diamonds. Here, we report on the high-pressure, high-temperature synthesis of such nanodiamonds about 10 nm in size and containing an optically active, single silicon-vacancy color center. Using special sample preparation technique, we were able to prepare samples containing single nanodiamonds on the surface. By correlating atomic-force microscope images and confocal optical images, we verified the presence of optically active color centers in single nanocrystals, and using second-order correlation measurements, we proved the single-photon emission statistics of these nanodiamonds. These color centers have nonblinking, spectrally narrow emission with narrow distribution of spectral width and positions of zero-phonon line, thus proving the high quality of the nanodiamonds produced.