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Quantum Electronics

Quantum memory node based on a semiconductor double quantum dot in a laser-controlled optical resonator

Alexander V. Tsukanov, I. Yu. Kateev

Published Aug 3, 2017• 4 citations
Publisher

Abstract

The concept of a quantum node consisting of a memory qubit and a frequency convertor is proposed and analysed. The memory qubit is presented by a semiconductor four-level double quantum dot (DQD) placed in an optical microresonator (MR). The DQD contains an electron in the quantised part of the conduction band and the MR can be populated by a certain number of photons. The DQD and MR states are controlled be applying the laser and electrostatic fields. The difference between the telecommunication frequency of the photon (transport qubit) supplied to the system through a waveguide and the frequency of the electronic transition in the DQD is compensated for using an auxiliary element, i.e. a frequency convertor based on a single quantum dot (QD). This design allows the electron – photon state of the hybrid system to be controlled by an appropriate variation of the field parameters and the switching between resonance and nonresonance DQD and MR interaction regimes. As an example, a GaAs DQD placed in a microdisk MR is studied. A numerical technique for modelling an optical spectrum of a microdisk MR with an additional layer (AL) deposited on its surface is developed. Using this technique, the effect of the AL on the MR eigenmode properties is investigated and the possibility of tuning its frequency to the QD electronic transition frequency by depositing an AL on the disk surface is demonstrated.

DOI
10.1070/qel16319

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The concept of a quantum node consisting of a memory qubit and a frequency convertor is proposed and analysed. The memory qubit is presented by a semiconductor four-level double quantum dot (DQD) placed in an optical microresonator (MR). The DQD contains an electron in the quantised part of the conduction band and the MR can be populated by a certain number of photons. The DQD and MR states are controlled be applying the laser and electrostatic fields. The difference between the telecommunication frequency of the photon (transport qubit) supplied to the system through a waveguide and the frequency of the electronic transition in the DQD is compensated for using an auxiliary element, i.e. a frequency convertor based on a single quantum dot (QD). This design allows the electron – photon state of the hybrid system to be controlled by an appropriate variation of the field parameters and the switching between resonance and nonresonance DQD and MR interaction regimes. As an example, a GaAs DQD placed in a microdisk MR is studied. A numerical technique for modelling an optical spectrum of a microdisk MR with an additional layer (AL) deposited on its surface is developed. Using this technique, the effect of the AL on the MR eigenmode properties is investigated and the possibility of tuning its frequency to the QD electronic transition frequency by depositing an AL on the disk surface is demonstrated.
Abstract A scheme for measuring the state of a charge qubit on a semiconductor single-electron double quantum dot (DQD) coupled to a photonic molecule (PM) consisting of three optical microresonators is proposed. The DQD that is the qubit plays the role of a nonlinear element whose electron state affects a PM response to an external laser field. Analysis of the spectroscopic response of the structure in the steady-state regime allows one to determine the state of the qubit. As an example, the spectrum of the PM formed by three GaAs microdisk resonators are calculated. The effect of various system parameters on the measuring contrast and the signal-to-noise ratio is studied. It is shown that this ratio can reach values of 15 000–20 000 for certain sets of parameters.
The concept of multifunctional device (a quantum node) composed of a semiconductor single-electron four-level doublequantum dot coupled to an optical microcavity resonator is developed. The terahertz laser field and voltage biases provide an external control. The structure enables flexible driving via appropriate variations of field amplitudes and switching between resonant and off-resonant modes. As shown this hybrid electron-photon system can be used as the charge qubit with flying-to-stationary qubit conversion or the single-photon transistor and several others. Each of listed devices works in the specific regime of system evolution. For example, the qubit is robust when the optical resonator and laser Rabi frequencies dominate the dissipation rates – the so-called strong coupling or coherent regime. From another hand, in order to attain the steady-state one has to work in the so-called weak coupling or incoherent regime when the dissipation rates are comparable to or greater than the Rabi frequencies. Further, the single-photon driving is required for spectroscopic applications of this system. We numerically investigate the population dynamics to reveal the parameter choice corresponding to each device. The model is based on Lindblad formalism where all incoherent processes are considered as the markovian ones. The time dependencies of populations and spectrograms for different pairs of parameters are obtained. The specific features concerned with working characteristics of the quantum node in different modes are discussed.
We consider one- and two-qubit operations on charge qubits that represent double quantum dots with one electron in each of them. The dots are formed inside a high-Q semiconductor cavity (disk, toroidal, or spherical) in the antinodes of one of its optical eigenmodes; the frequencies of the transitions between the ground (logic) and excited (auxiliary) states of the discrete electron spectrum in quantum dots are close to the frequency of this mode. The precise tuning of the transition frequency is performed by applying an electric potential on the qubit control gate. Within the model of qubits coherently interacting with a cavity quantum field, a few methods for controlling their states are developed. In particular, we propose different variants for implementing two-qubit CNOT and CZ gates and generating qubit entangled states. By the example of a micro-disk cavity, we calculate the operating characteristics that ensure a high rate of quantum gate implementation.
We study the possibility of implementing a two-qubit controlled-NOT gate operation in a structure consisting of two semiconductor double quantum dots placed in a high- Q optical microcavity and governed by a resonant laser field. The effect of relaxation processes on the dynamics of the two-electron system is discussed. The dissipation rates allowing quantum error correction algorithms to be used are determined. The existing additional excitation channel (laser pulse) is shown to weaken the effect of the nonideality of the cavity on the evolution of the states. Optimal electron coupling coefficients in the quantum dots with control fields are fitted, in which the controlled qubit is switched with the highest probability and the gate implementation takes several hundreds of picoseconds.
Semiconductor quantum dots in silicon demonstrate exceptionally long spin lifetimes as qubits and are therefore promising candidates for quantum information processing. However, control and readout techniques for these devices have thus far employed low frequency electrons, in contrast to high speed temperature readout techniques used in other qubit architectures, and coupling between multiple quantum dot qubits has not been satisfactorily addressed.This dissertation presents the design and characterization of a semiconductor charge qubit based on double quantum dot in silicon with an integrated microwave resonator for control and readout. The 6 GHz resonator is designed to achieve strong coupling with the quantum dot qubit, allowing the use of circuit QED control and readout techniques which have not previously been applicable to semiconductor qubits. To achieve this coupling, this document demonstrates successful operation of a novel silicon double quantum dot design with a single active metallic layer and a coplanar stripline resonator with a bias tee for dc excitation.Experiments presented here demonstrate quantum localization and measurement of both electrons on the quantum dot and photons in the resonator. Further, it is shown that the resonator-qubit coupling in these devices is sufficient to reach the strong coupling regime of circuit QED. The details of a measurement setup capable of performing simultaneous low noise measurements of the resonator and quantum dot structure are also presented here.The ultimate aim of this research is to integrate the long coherence times observed in electron spins in silicon with the sophisticated readout architectures available in circuit QED based quantum information systems. This would allow superconducting qubits to be coupled directly to semiconductor qubits to create hybrid quantum systems with separate quantum memory and processing components.
Abstract A spectroscopic approach to measuring a charge qubit placed in a waveguide consisting of three microcavities (a photonic molecule) is discussed. The logical states of a qubit are represented by the single-electron orbitals of a semiconductor double quantum dot. The impact of different factors that cause deviations of the system’s parameters from specified values is investigated. The possibility of controlling the spectrum of a photonic molecule using a local change in its dielectric properties in order to optimize the qubit measurement procedure is analyzed. The functions of the measuring contrast and signal-to-noise ratio are calculated depending on the main parameters of the system.