Challenges
Datasets
Workspaces
Papers
Discussions
Leaderboard
Log inSign up
Challenges
Datasets
Workspaces
Papers
Discussions
Leaderboard
Blog
Job Board
Q3AS

© 2026 Aqora Quantum S.A.S.

TermsPrivacyLegal Notice

Russian Microelectronics

Photonic Molecule with Mechanical Frequency Tuning for the Optical Measurements of a Semiconductor Charge Qubit

Alexander V. Tsukanov, I. Yu. Kateev

Published Mar 1, 2021• 6 citations
Publisher

Abstract

Abstract A spectroscopic approach to measuring a charge qubit placed in a waveguide consisting of three microcavities (a photonic molecule) is discussed. The logical states of a qubit are represented by the single-electron orbitals of a semiconductor double quantum dot. The impact of different factors that cause deviations of the system’s parameters from specified values is investigated. The possibility of controlling the spectrum of a photonic molecule using a local change in its dielectric properties in order to optimize the qubit measurement procedure is analyzed. The functions of the measuring contrast and signal-to-noise ratio are calculated depending on the main parameters of the system.

DOI
10.1134/s1063739721020098

Related papers

Optical measurement of double-dot population using photon transmission via three coupled microresonators

Alexander V. Tsukanov, I. Yu. Kateev

Abstract A scheme for measuring the state of a charge qubit on a semiconductor single-electron double quantum dot (DQD) coupled to a photonic molecule (PM) consisting of three optical microresonators is proposed. The DQD that is the qubit plays the role of a nonlinear element whose electron state affects a PM response to an external laser field. Analysis of the spectroscopic response of the structure in the steady-state regime allows one to determine the state of the qubit. As an example, the spectrum of the PM formed by three GaAs microdisk resonators are calculated. The effect of various system parameters on the measuring contrast and the signal-to-noise ratio is studied. It is shown that this ratio can reach values of 15 000–20 000 for certain sets of parameters.

Laser Physics•Apr 27, 2021•2 citations

Electric and temperature control of parameters of a charge qubit in a microresonator under technological deviations

A V Tsukanov, I Yu Kateev

Abstract Effect of statistical deviations of geometric sizes on operating parameters of an optically controlled semiconductor quantum dot (QD) charge qubit is studied. A numerical analysis of averaged spectra of a double QD and a photonic crystal microresonator (MR) is carried out in the presence of technological imperfections of their parameters. An estimate for correction electric field amplitudes that compensate for deviations of the real qubit parameters from the calculated ones is obtained. The possibility of correcting the optical spectrum of the MR by changing its temperature is shown.

Laser Physics Letters•Dec 1, 2025•0 citations

Effect of optical phonons on the charge qubit dynamics in a semiconductor microcavity

Alexander V. Tsukanov, I. Yu. Kateev

We consider the possibility of using optical vibrational degrees of freedom as an additional resource for controlling the evolution of a charge qubit based on a semiconductor single-electron double quantum dot. The effect of electron – photon – phonon processes on the accuracy of single-qubit operations is investigated. It is shown that, depending on the phonon decay rate and detuning of the electronic transition frequency from the optical phonon frequency, these processes can both facilitate and prevent coherent electron transfer between quantum dots.

Quantum Electronics•Jul 26, 2018•7 citations

Quantum memory node based on a semiconductor double quantum dot in a laser-controlled optical resonator

Alexander V. Tsukanov, I. Yu. Kateev

The concept of a quantum node consisting of a memory qubit and a frequency convertor is proposed and analysed. The memory qubit is presented by a semiconductor four-level double quantum dot (DQD) placed in an optical microresonator (MR). The DQD contains an electron in the quantised part of the conduction band and the MR can be populated by a certain number of photons. The DQD and MR states are controlled be applying the laser and electrostatic fields. The difference between the telecommunication frequency of the photon (transport qubit) supplied to the system through a waveguide and the frequency of the electronic transition in the DQD is compensated for using an auxiliary element, i.e. a frequency convertor based on a single quantum dot (QD). This design allows the electron – photon state of the hybrid system to be controlled by an appropriate variation of the field parameters and the switching between resonance and nonresonance DQD and MR interaction regimes. As an example, a GaAs DQD placed in a microdisk MR is studied. A numerical technique for modelling an optical spectrum of a microdisk MR with an additional layer (AL) deposited on its surface is developed. Using this technique, the effect of the AL on the MR eigenmode properties is investigated and the possibility of tuning its frequency to the QD electronic transition frequency by depositing an AL on the disk surface is demonstrated.

Quantum Electronics•Aug 3, 2017•4 citations

Tight-Binding Approximation for a Double-Quantum-Dot Charge Qubit in an Optically Controlled Photonic Molecular Structure

A. V. Tsukanov, И. Ю. Катеев

Abstract This paper considers the transition from the coordinate representation of the Hamiltonian of a charge qubit in a single-electron double quantum dot to the projection representation in the tight-binding approximation. It is shown that this representation allows one to identify the parameters (energy levels, transition frequencies, and Rabi frequencies) obtained by numerically solving the stationary Schrödinger equation for a specific quantum dot. Similarly, solutions of Maxwell’s equations for the photonic molecule controlling the qubit state are used to obtain its Hamiltonian in the tight-binding approximation.

Russian Microelectronics•Feb 1, 2026•0 citations

Quantum operations on charge qubits with the electrostatic control in semiconductor cavities

Alexander V. Tsukanov, I. Yu. Kateev

We consider one- and two-qubit operations on charge qubits that represent double quantum dots with one electron in each of them. The dots are formed inside a high-Q semiconductor cavity (disk, toroidal, or spherical) in the antinodes of one of its optical eigenmodes; the frequencies of the transitions between the ground (logic) and excited (auxiliary) states of the discrete electron spectrum in quantum dots are close to the frequency of this mode. The precise tuning of the transition frequency is performed by applying an electric potential on the qubit control gate. Within the model of qubits coherently interacting with a cavity quantum field, a few methods for controlling their states are developed. In particular, we propose different variants for implementing two-qubit CNOT and CZ gates and generating qubit entangled states. By the example of a micro-disk cavity, we calculate the operating characteristics that ensure a high rate of quantum gate implementation.

Russian Microelectronics•Jul 1, 2013•15 citations
Abstract A spectroscopic approach to measuring a charge qubit placed in a waveguide consisting of three microcavities (a photonic molecule) is discussed. The logical states of a qubit are represented by the single-electron orbitals of a semiconductor double quantum dot. The impact of different factors that cause deviations of the system’s parameters from specified values is investigated. The possibility of controlling the spectrum of a photonic molecule using a local change in its dielectric properties in order to optimize the qubit measurement procedure is analyzed. The functions of the measuring contrast and signal-to-noise ratio are calculated depending on the main parameters of the system.
Abstract A scheme for measuring the state of a charge qubit on a semiconductor single-electron double quantum dot (DQD) coupled to a photonic molecule (PM) consisting of three optical microresonators is proposed. The DQD that is the qubit plays the role of a nonlinear element whose electron state affects a PM response to an external laser field. Analysis of the spectroscopic response of the structure in the steady-state regime allows one to determine the state of the qubit. As an example, the spectrum of the PM formed by three GaAs microdisk resonators are calculated. The effect of various system parameters on the measuring contrast and the signal-to-noise ratio is studied. It is shown that this ratio can reach values of 15 000–20 000 for certain sets of parameters.
Abstract Effect of statistical deviations of geometric sizes on operating parameters of an optically controlled semiconductor quantum dot (QD) charge qubit is studied. A numerical analysis of averaged spectra of a double QD and a photonic crystal microresonator (MR) is carried out in the presence of technological imperfections of their parameters. An estimate for correction electric field amplitudes that compensate for deviations of the real qubit parameters from the calculated ones is obtained. The possibility of correcting the optical spectrum of the MR by changing its temperature is shown.
We consider the possibility of using optical vibrational degrees of freedom as an additional resource for controlling the evolution of a charge qubit based on a semiconductor single-electron double quantum dot. The effect of electron – photon – phonon processes on the accuracy of single-qubit operations is investigated. It is shown that, depending on the phonon decay rate and detuning of the electronic transition frequency from the optical phonon frequency, these processes can both facilitate and prevent coherent electron transfer between quantum dots.
The concept of a quantum node consisting of a memory qubit and a frequency convertor is proposed and analysed. The memory qubit is presented by a semiconductor four-level double quantum dot (DQD) placed in an optical microresonator (MR). The DQD contains an electron in the quantised part of the conduction band and the MR can be populated by a certain number of photons. The DQD and MR states are controlled be applying the laser and electrostatic fields. The difference between the telecommunication frequency of the photon (transport qubit) supplied to the system through a waveguide and the frequency of the electronic transition in the DQD is compensated for using an auxiliary element, i.e. a frequency convertor based on a single quantum dot (QD). This design allows the electron – photon state of the hybrid system to be controlled by an appropriate variation of the field parameters and the switching between resonance and nonresonance DQD and MR interaction regimes. As an example, a GaAs DQD placed in a microdisk MR is studied. A numerical technique for modelling an optical spectrum of a microdisk MR with an additional layer (AL) deposited on its surface is developed. Using this technique, the effect of the AL on the MR eigenmode properties is investigated and the possibility of tuning its frequency to the QD electronic transition frequency by depositing an AL on the disk surface is demonstrated.
Abstract This paper considers the transition from the coordinate representation of the Hamiltonian of a charge qubit in a single-electron double quantum dot to the projection representation in the tight-binding approximation. It is shown that this representation allows one to identify the parameters (energy levels, transition frequencies, and Rabi frequencies) obtained by numerically solving the stationary Schrödinger equation for a specific quantum dot. Similarly, solutions of Maxwell’s equations for the photonic molecule controlling the qubit state are used to obtain its Hamiltonian in the tight-binding approximation.
We consider one- and two-qubit operations on charge qubits that represent double quantum dots with one electron in each of them. The dots are formed inside a high-Q semiconductor cavity (disk, toroidal, or spherical) in the antinodes of one of its optical eigenmodes; the frequencies of the transitions between the ground (logic) and excited (auxiliary) states of the discrete electron spectrum in quantum dots are close to the frequency of this mode. The precise tuning of the transition frequency is performed by applying an electric potential on the qubit control gate. Within the model of qubits coherently interacting with a cavity quantum field, a few methods for controlling their states are developed. In particular, we propose different variants for implementing two-qubit CNOT and CZ gates and generating qubit entangled states. By the example of a micro-disk cavity, we calculate the operating characteristics that ensure a high rate of quantum gate implementation.