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Laser Physics

Optical measurement of double-dot population using photon transmission via three coupled microresonators

Alexander V. Tsukanov, I. Yu. Kateev

Published Apr 27, 2021• 2 citations
Publisher

Abstract

Abstract A scheme for measuring the state of a charge qubit on a semiconductor single-electron double quantum dot (DQD) coupled to a photonic molecule (PM) consisting of three optical microresonators is proposed. The DQD that is the qubit plays the role of a nonlinear element whose electron state affects a PM response to an external laser field. Analysis of the spectroscopic response of the structure in the steady-state regime allows one to determine the state of the qubit. As an example, the spectrum of the PM formed by three GaAs microdisk resonators are calculated. The effect of various system parameters on the measuring contrast and the signal-to-noise ratio is studied. It is shown that this ratio can reach values of 15 000–20 000 for certain sets of parameters.

DOI
10.1088/1555-6611/abf647

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Abstract A scheme for measuring the state of a charge qubit on a semiconductor single-electron double quantum dot (DQD) coupled to a photonic molecule (PM) consisting of three optical microresonators is proposed. The DQD that is the qubit plays the role of a nonlinear element whose electron state affects a PM response to an external laser field. Analysis of the spectroscopic response of the structure in the steady-state regime allows one to determine the state of the qubit. As an example, the spectrum of the PM formed by three GaAs microdisk resonators are calculated. The effect of various system parameters on the measuring contrast and the signal-to-noise ratio is studied. It is shown that this ratio can reach values of 15 000–20 000 for certain sets of parameters.
The concept of a quantum node consisting of a memory qubit and a frequency convertor is proposed and analysed. The memory qubit is presented by a semiconductor four-level double quantum dot (DQD) placed in an optical microresonator (MR). The DQD contains an electron in the quantised part of the conduction band and the MR can be populated by a certain number of photons. The DQD and MR states are controlled be applying the laser and electrostatic fields. The difference between the telecommunication frequency of the photon (transport qubit) supplied to the system through a waveguide and the frequency of the electronic transition in the DQD is compensated for using an auxiliary element, i.e. a frequency convertor based on a single quantum dot (QD). This design allows the electron – photon state of the hybrid system to be controlled by an appropriate variation of the field parameters and the switching between resonance and nonresonance DQD and MR interaction regimes. As an example, a GaAs DQD placed in a microdisk MR is studied. A numerical technique for modelling an optical spectrum of a microdisk MR with an additional layer (AL) deposited on its surface is developed. Using this technique, the effect of the AL on the MR eigenmode properties is investigated and the possibility of tuning its frequency to the QD electronic transition frequency by depositing an AL on the disk surface is demonstrated.
Abstract A spectroscopic approach to measuring a charge qubit placed in a waveguide consisting of three microcavities (a photonic molecule) is discussed. The logical states of a qubit are represented by the single-electron orbitals of a semiconductor double quantum dot. The impact of different factors that cause deviations of the system’s parameters from specified values is investigated. The possibility of controlling the spectrum of a photonic molecule using a local change in its dielectric properties in order to optimize the qubit measurement procedure is analyzed. The functions of the measuring contrast and signal-to-noise ratio are calculated depending on the main parameters of the system.
Abstract A theoretical model of a semiconductor nanostructure consisting of a single-mode microresonator containing two quantum dots is considered. It is shown that the Coulomb interaction between electrons localized in the quantum dots modifies a spectral response of the system to an external laser field. The possibility of its use for detecting an elementary charge in the third (optically inactive) quantum dot is discussed. The influence of both diagonal (Stark effect) and non-diagonal (Foerster effect) Coulomb matrix elements of the Hamiltonian on the detection accuracy is studied. The dependences of a measuring contrast on the parameters of the resonator and the quantum dots are calculated. The existence of such structural configurations for which the contrast retains an optimal value even at large distances to the measured dot is established.
The concept of multifunctional device (a quantum node) composed of a semiconductor single-electron four-level doublequantum dot coupled to an optical microcavity resonator is developed. The terahertz laser field and voltage biases provide an external control. The structure enables flexible driving via appropriate variations of field amplitudes and switching between resonant and off-resonant modes. As shown this hybrid electron-photon system can be used as the charge qubit with flying-to-stationary qubit conversion or the single-photon transistor and several others. Each of listed devices works in the specific regime of system evolution. For example, the qubit is robust when the optical resonator and laser Rabi frequencies dominate the dissipation rates – the so-called strong coupling or coherent regime. From another hand, in order to attain the steady-state one has to work in the so-called weak coupling or incoherent regime when the dissipation rates are comparable to or greater than the Rabi frequencies. Further, the single-photon driving is required for spectroscopic applications of this system. We numerically investigate the population dynamics to reveal the parameter choice corresponding to each device. The model is based on Lindblad formalism where all incoherent processes are considered as the markovian ones. The time dependencies of populations and spectrograms for different pairs of parameters are obtained. The specific features concerned with working characteristics of the quantum node in different modes are discussed.
Abstract A scheme is proposed for measuring electron level populations in a semiconductor quantum dot embedded in a multimode waveguide. The photon transmittance of the waveguide under steady-state pumping is shown to depend on the presence of an electron in the ground state of the quantum dot. The influence of waveguide, quantum dot, and photon source parameters on the electron detection process is examined. It is shown that, even at a moderate mode Q-factor (104 to 105), the measurement contrast and signal-to-noise ratio are rather high (above 104). The feasibility of using the proposed method for probing the state of a charge qubit is discussed.
A scheme for determining an arbitrary pure state of a charge qubit by measuring a steady-state current through a single-electron transistor is proposed. In order to increase the sensitivity of the transistor its operating part consists of three quantum dots, the energy levels of which form a symmetrical configuration. Such a choice makes it possible to realize high-precision measurements in a nonresonant steady-state regime when a maximum distance of the qubit from this structure is several hundreds of nanometers. Time-dependent populations of the structure states are obtained; a current and a measurement contrast are calculated as functions of system geometric parameters and the optimal values of these parameters are found.