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Low-frequency noise properties of NbN, Nb and Bi-2212-based tunnel junctions

Hiroki Ishida, Atsushi SAITO, Kumi Okanoue, Akira Kawakami, Z. Wang, Akinobu Irie, Gin-ichiro Oya, K. Hamasaki

Published Oct 10, 2003• 0 citations
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Development of epitaxial NbN/MgO/NbN–superconductor-insulator-superconductor mixers for operations over the Nb gap frequency

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We have developed fabrication processes for epitaxial NbN/MgO/NbN trilayers and epitaxial NbN/MgO/NbN tunnel junctions. We estimated the junction specific capacitances (CS) for designing fully epitaxial NbN–superconductor-insulator-superconductor (SIS) mixers by using Fiske steps. Tunnel junctions measuring 40×3 and 20×3 μm2 were fabricated, and Fiske steps caused by external magnetic fields were clearly observed in the I–V characteristics. The CS was estimated as a function of the product of the normal-state resistance and the junction area (RNA), and they were 73–120 fF/μm2 at 8800–90 Ω μm2. We fabricated and tested a fully epitaxial NbN/MgO/NbN–SIS mixer. The mixer showed low-noise properties over the Nb gap frequency, and the lowest DSB receiver noise was 260 K at 795 GHz.

Applied Physics Letters•Nov 7, 2003•40 citations
We present the noise properties of a mixer with the NbN-MgO-NbN quasiparticle tunnel junctions. Our work is based on experiment in the 120-180 GHz range with the NbN tunnel junctions in the mixer. Mixer printed circuit is totally made of NbN. The mixer operates at 5.4 K temperature unacceptable with Nb junctions. The minimum DSB receiver noise temperature is about 65 K at 162 GHz and approaches the Nb SIS mixer performance in mm band. It has been found that the noise sources in the NbN junctions are comparable to the Nb junctions and that the receiver noise with the NbN SIS mixer may be only few times more than the quantum limit of noise in the frequency range below the gap frequency. Output noise of the SIS mixer has been found constant in a wide frequency band and within an important range of the local oscillator amplitudes.
We have developed fabrication processes for epitaxial NbN/MgO/NbN trilayers and epitaxial NbN/MgO/NbN tunnel junctions. We estimated the junction specific capacitances (CS) for designing fully epitaxial NbN–superconductor-insulator-superconductor (SIS) mixers by using Fiske steps. Tunnel junctions measuring 40×3 and 20×3 μm2 were fabricated, and Fiske steps caused by external magnetic fields were clearly observed in the I–V characteristics. The CS was estimated as a function of the product of the normal-state resistance and the junction area (RNA), and they were 73–120 fF/μm2 at 8800–90 Ω μm2. We fabricated and tested a fully epitaxial NbN/MgO/NbN–SIS mixer. The mixer showed low-noise properties over the Nb gap frequency, and the lowest DSB receiver noise was 260 K at 795 GHz.