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Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE

Noise properties of a mixer with SIS NbN quasi-particle tunnel junctions

Alexandre Karpov, B. Plathner, K. H. Gundlach, Masahiro Aoyagi, S. Takada

Published Oct 13, 1995• 3 citations
Publisher

Abstract

We present the noise properties of a mixer with the NbN-MgO-NbN quasiparticle tunnel junctions. Our work is based on experiment in the 120-180 GHz range with the NbN tunnel junctions in the mixer. Mixer printed circuit is totally made of NbN. The mixer operates at 5.4 K temperature unacceptable with Nb junctions. The minimum DSB receiver noise temperature is about 65 K at 162 GHz and approaches the Nb SIS mixer performance in mm band. It has been found that the noise sources in the NbN junctions are comparable to the Nb junctions and that the receiver noise with the NbN SIS mixer may be only few times more than the quantum limit of noise in the frequency range below the gap frequency. Output noise of the SIS mixer has been found constant in a wide frequency band and within an important range of the local oscillator amplitudes.

DOI
10.1117/12.224232

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We study noise and conversion gain in the SIS mixers with Nb/MgO/NbN junctions at the millimeter and submillimeter wavelengths in order to estimate the possibility to extent the low noise operation towards the theoretical limit of 4/spl Delta//h=2.4 THz. We present as preliminary result the lowest achieved receiver noise with NbN SIS junctions of 65 K with conversion gain of -6 dB at 162 GHz and 230 K receiver noise with conversion gain of -10 dB at 306 GHz. The junction area is 2 /spl mu/m/sup 2/ and Josephson critical current density is 1.4 KA/cm/sup 2/. The optimum R/sub N//spl omega/C of NbN junction for mixers is estimated as 600 GHz/V. In preliminary tests the junctions R/sub N//spl omega/C is 10-20 time superior to the optimum and a significant improvement of NbN SIS mixers may be expected. The noise sources in the NbN SIS junctions are studied and a possible mixer sensitivity improvement is discussed. The thermal properties of the SIS NbN are studied. The frequency limit of the low loss integrated tuning structure in NbN is estimated as at least as 1.5 THz.

IEEE Transactions on Applied Superconductivity•Jun 1, 1997•9 citations
We present the noise properties of a mixer with the NbN-MgO-NbN quasiparticle tunnel junctions. Our work is based on experiment in the 120-180 GHz range with the NbN tunnel junctions in the mixer. Mixer printed circuit is totally made of NbN. The mixer operates at 5.4 K temperature unacceptable with Nb junctions. The minimum DSB receiver noise temperature is about 65 K at 162 GHz and approaches the Nb SIS mixer performance in mm band. It has been found that the noise sources in the NbN junctions are comparable to the Nb junctions and that the receiver noise with the NbN SIS mixer may be only few times more than the quantum limit of noise in the frequency range below the gap frequency. Output noise of the SIS mixer has been found constant in a wide frequency band and within an important range of the local oscillator amplitudes.
The low-noise performance of a waveguide SIS mixer with NbN/AlN/NbN tunnel junctions and an NbN/MgO/NbTiN tuning circuit on an MgO substrate was demonstrated at frequencies above the gap frequency of Nb. To design the mixer, the complex refractive index of the MgO substrate was measured by using a THz time-domain spectrometer. The superconductive properties of NbTiN films on MgO were examined in detail. An uncorrected receiver noise temperature of 262 K (DSB) at 820 GHz was achieved in an IF bandwidth of 4-12 GHz at a bath temperature of 4.2 K. By comparing the measured and calculated conversion gains, the loss in the NbN/MgO/NbTiN tuning circuit was estimated to be 0.98 dB at 810 GHz.
We have theoretically and experimentally investigated submillimeter-wave receiver performances employing NbN/ALN/NbN tunnel junctions with high current density and high energy. gap. The receiver noise based on parameters for our typical NbN SIS junction were analyzed using Tucker's quantum theory of mixing, which showed that DSB receiver noise temperatures of below 3hv/K B can be achieved by using the NbN SIS junctions for frequencies up to 2 THz. An experimental receiver has been designed and tested for the 1 THz band. The mixer consists of a MgO hyperhemispherical lens with anti-reflection cap, a NbN twin-slot antenna, and NbN tuning circuits. The prepared NbN/A1N/NbN junction size was about 0.5 !mut), and the current density was about 30 kA/cm 2 (o)CJRN = 11 at 1 THz). Although the junctions showed good dc I-V characteristics with a small sub-gap leakage current, the receiver noise temperature measured by the standard Y-factor method was about 2700 K(DSB) at 761 GHz, which is much larger than the theoretical prediction. The relative high noise performance may be caused by the large RF losses in the tuning circuit of polycristalline NbN on the SiO.
We report on low-noise heterodyne mixing with NbN/A1N/NbN tunnel junctions in the submillimeter-wave region for the first time. The receiver consists of the quasi-optical NbN SIS mixer with an integrated tuning circuit in which a radial short stub tuner is incorporated to resonate out the junction capacitance for RF matching and a balanced IF circuit for broadband IF matching. The prepared NbN SIS junction has a current density of 20 kA/cm 2 and is about 1 I1111 in diameter, supplying a small coC JRN product (o)CJRN = 3 at 300 GHz). The junctions showed good dc I-V characteristics, excellent submillimeter-wave responses and sensitive heterodyne mixing responses. From 254 to 350 GHz the average receiver noise temperature measured using by the standard Y-factor method was about 250 K (DSB) at 5 K. The lowest receiver noise temperature, 200 K (DSB), was obtained at around 303 GHz. Comparing NbN/A1N/NbN and Nb/A10x/Nb tunnel junction performance with the same tuning circuit showed that the frequency dependence of the receiver noise temperature agreed well in the two receivers. These results suggest that our well-controlled NbN SIS junctions can be used for terahertz mixer elements instead of Nb SIS junctions.
Heterodyne mixers based on superconducting SIS (superconductor-insulator-superconductor) tunnel junctions have been demonstrated to be the most sensitive coherent detectors at millimeter and submillimeter wavelengths. In fact, conventional superconducting SIS mixers with Nb/AlOx/Nb junction and Nb/SiO2/Nb tuning circuit have shown good performances with the noise temperature reaching as low as three times the quantum limit below 0.7THz, which is the gap frequency of Nb-based SIS junctions. However, due to the large loss in Nb thin-film superconducting microstrip lines, the noise performance of Nb SIS mixers deteriorates significantly above 0.7THz. With a gap frequency double that of Nb-based SIS junctions, NbN-based SIS junctions are of particular interest for the development of heterodyne mixers in the terahertz region. Considering the bandwidth and output power of local-oscillator (LO) signal sources are quite limited around 1THz, we firstly develop a waveguide NbN-based SIS mixer at 0.5THz. Three types of SIS junctions, i.e., long junction, parallel-connected tunnel junction (PCTJ) and distributed junction array (DJ) are investigated. They are all comprised of NbN-AlN-NbN tri-layer fabricated on an MgO substrate and have the same current density (Jc) of 10kA/cm2. In this paper, we describe their design, fabrication and preliminary experimental results.
Superconductor–insulator–superconductor (SIS) mixers remain the choice of heterodyne mixers for single-dish telescopes and interferometers at millimeter and submillimeter wavelengths. Compared with conventional Nb/AlOx/Nb superconducting tunnel junctions, Nb/AlN/NbN ones have larger gap voltage and may reach critical-current density beyond 10kA/cm2, which are both of particularly interest in developing broadband SIS mixers. Here we report on the design and measurement of an SIS mixer based on Nb/AlN/NbN parallel connected twin junctions (PCTJ) incorporating NbTiN/SiO2/Al microstrip circuit. The junctions have a gap voltage of 3.18mV and a critical-current density of 15kA/cm2. The measured receiver noise temperature reach 5hν/kB among 200-260GHz band, and the mixer’s fractional bandwidth is about 40% centered at 230GHz.
We study noise and conversion gain in the SIS mixers with Nb/MgO/NbN junctions at the millimeter and submillimeter wavelengths in order to estimate the possibility to extent the low noise operation towards the theoretical limit of 4/spl Delta//h=2.4 THz. We present as preliminary result the lowest achieved receiver noise with NbN SIS junctions of 65 K with conversion gain of -6 dB at 162 GHz and 230 K receiver noise with conversion gain of -10 dB at 306 GHz. The junction area is 2 /spl mu/m/sup 2/ and Josephson critical current density is 1.4 KA/cm/sup 2/. The optimum R/sub N//spl omega/C of NbN junction for mixers is estimated as 600 GHz/V. In preliminary tests the junctions R/sub N//spl omega/C is 10-20 time superior to the optimum and a significant improvement of NbN SIS mixers may be expected. The noise sources in the NbN SIS junctions are studied and a possible mixer sensitivity improvement is discussed. The thermal properties of the SIS NbN are studied. The frequency limit of the low loss integrated tuning structure in NbN is estimated as at least as 1.5 THz.