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IEEE Transactions on Applied Superconductivity

Noise and gain in frequency mixers with NbN SIS junctions

Alexandre Karpov, B. Plathner, J. Blondel, Matthias Schicke, K. H. Gundlach, Masahiro Aoyagi, S. Takada

Published Jun 1, 1997• 9 citations
Publisher

Abstract

We study noise and conversion gain in the SIS mixers with Nb/MgO/NbN junctions at the millimeter and submillimeter wavelengths in order to estimate the possibility to extent the low noise operation towards the theoretical limit of 4/spl Delta//h=2.4 THz. We present as preliminary result the lowest achieved receiver noise with NbN SIS junctions of 65 K with conversion gain of -6 dB at 162 GHz and 230 K receiver noise with conversion gain of -10 dB at 306 GHz. The junction area is 2 /spl mu/m/sup 2/ and Josephson critical current density is 1.4 KA/cm/sup 2/. The optimum R/sub N//spl omega/C of NbN junction for mixers is estimated as 600 GHz/V. In preliminary tests the junctions R/sub N//spl omega/C is 10-20 time superior to the optimum and a significant improvement of NbN SIS mixers may be expected. The noise sources in the NbN SIS junctions are studied and a possible mixer sensitivity improvement is discussed. The thermal properties of the SIS NbN are studied. The frequency limit of the low loss integrated tuning structure in NbN is estimated as at least as 1.5 THz.

DOI
10.1109/77.614712

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•Mar 1, 1996•2 citations
We study noise and conversion gain in the SIS mixers with Nb/MgO/NbN junctions at the millimeter and submillimeter wavelengths in order to estimate the possibility to extent the low noise operation towards the theoretical limit of 4/spl Delta//h=2.4 THz. We present as preliminary result the lowest achieved receiver noise with NbN SIS junctions of 65 K with conversion gain of -6 dB at 162 GHz and 230 K receiver noise with conversion gain of -10 dB at 306 GHz. The junction area is 2 /spl mu/m/sup 2/ and Josephson critical current density is 1.4 KA/cm/sup 2/. The optimum R/sub N//spl omega/C of NbN junction for mixers is estimated as 600 GHz/V. In preliminary tests the junctions R/sub N//spl omega/C is 10-20 time superior to the optimum and a significant improvement of NbN SIS mixers may be expected. The noise sources in the NbN SIS junctions are studied and a possible mixer sensitivity improvement is discussed. The thermal properties of the SIS NbN are studied. The frequency limit of the low loss integrated tuning structure in NbN is estimated as at least as 1.5 THz.
Small area (<or=1- mu m/sup 2/), high-current-density NbN-MgO-NbN tunnel junctions with I-V characteristics suitable for high-frequency mixers have been fabricated. Mesa-geometry junctions with an area of about 1 mu m/sup 2/ and critical current density of 5-10 kA/cm/sup 2/ are integrated with superconducting microstrip lines designed to resonate out the junction capacitance. Accurate values of junction capacitance and magnetic penetration depth are required for the proper design of the microstrip. A study was made of the mixer gain and noise performance near 205 GHz as a function of the inductance provided by the microstrip line. This has confirmed, at a high millimeter-wave frequency, values of junction capacitance of 85 fF/ mu m/sup 2/ and recently measured values of a magnetic penetration depth of 380 nm. Mixer noise temperatures as low as 134 K at 1.5 K have been obtained for properly tuned junctions. A significant improvement in mixer performance on cooling from 4.2 K to 1.5 K was observed. Edge-geometry junctions with an area of 0.3 mu m/sup 3/ and critical current density of 18-25 kA/cm/sup 2/ have also been fabricated. These junctions give a mixer noise temperature of 145 K at 4.2 K without the use of integrated tuning elements. These are the best results ever achieved for NbN-based SIS mixers.
The low-noise performance of a waveguide SIS mixer with NbN/AlN/NbN tunnel junctions and an NbN/MgO/NbTiN tuning circuit on an MgO substrate was demonstrated at frequencies above the gap frequency of Nb. To design the mixer, the complex refractive index of the MgO substrate was measured by using a THz time-domain spectrometer. The superconductive properties of NbTiN films on MgO were examined in detail. An uncorrected receiver noise temperature of 262 K (DSB) at 820 GHz was achieved in an IF bandwidth of 4-12 GHz at a bath temperature of 4.2 K. By comparing the measured and calculated conversion gains, the loss in the NbN/MgO/NbTiN tuning circuit was estimated to be 0.98 dB at 810 GHz.
We have theoretically and experimentally investigated submillimeter-wave receiver performances employing NbN/ALN/NbN tunnel junctions with high current density and high energy. gap. The receiver noise based on parameters for our typical NbN SIS junction were analyzed using Tucker's quantum theory of mixing, which showed that DSB receiver noise temperatures of below 3hv/K B can be achieved by using the NbN SIS junctions for frequencies up to 2 THz. An experimental receiver has been designed and tested for the 1 THz band. The mixer consists of a MgO hyperhemispherical lens with anti-reflection cap, a NbN twin-slot antenna, and NbN tuning circuits. The prepared NbN/A1N/NbN junction size was about 0.5 !mut), and the current density was about 30 kA/cm 2 (o)CJRN = 11 at 1 THz). Although the junctions showed good dc I-V characteristics with a small sub-gap leakage current, the receiver noise temperature measured by the standard Y-factor method was about 2700 K(DSB) at 761 GHz, which is much larger than the theoretical prediction. The relative high noise performance may be caused by the large RF losses in the tuning circuit of polycristalline NbN on the SiO.
We have designed, fabricated, and tested terahertz superconductor-insulator-superconductor (SIS) mixers having a self-compensated NbN/AlN/NbN tunnel junction and an epitaxially grown NbN/MgO/NbN microstripline. The junction as a distributed element was 0.8-/spl mu/m wide and 2.4-/spl mu/m long, and its current density was 50 kA/cm/sup 2/. The microstripline consisted of a 200-nm-thick NbN ground plane, a 180-nm-thick MgO insulator, and a 350-nm-thick NbN wiring layer. An investigation of the mixer in our receiver configuration showed flat noise characteristics from 870 to 960 GHz. The lowest receiver noise temperature of about 550 K was obtained at 909 GHz, including a 9-/spl mu/m-thick Mylar beam splitter loss and other optical losses. These characteristics suggest that SIS mixers with self-compensated NbN/AlN/NbN junctions and NbN/MgO/NbN microstriplines are appropriate for used in wideband and low-noise operations at terahertz frequencies.
We have designed, fabricated and evaluated a quasi-optical SIS receiver with NbN/AlN/NbN tunnel junctions in the submillimeter-wave region. The receiver consists of a planar self-complementary log-periodic antenna and MgO hyperhemispherical lens with an anti-reflection cap for RF optics, NbN SIS junctions and a radial short stub tuner to resonate out its capacitance for RF matching. The prepared NbN SIS junction has a current density of 20 kA/cm/sup 2/ and is about 1 /spl mu/m in diameter, supplying a small /spl omega/C/sub J/R/sub N/ product (/spl omega/C/sub J/R/sub N/=3 at 300 GHz). From 297 to 356 GHz the average double sideband (DSB) receiver noise temperature measured by using the standard Y-factor method was about 200 K. The lowest receiver noise temperature, 167 K (DSB), was obtained at around 303 GHz. These results suggest that our NbN SIS junctions can be used for terahertz mixer elements instead of Nb SIS junctions.
We report on low-noise heterodyne mixing with NbN/A1N/NbN tunnel junctions in the submillimeter-wave region for the first time. The receiver consists of the quasi-optical NbN SIS mixer with an integrated tuning circuit in which a radial short stub tuner is incorporated to resonate out the junction capacitance for RF matching and a balanced IF circuit for broadband IF matching. The prepared NbN SIS junction has a current density of 20 kA/cm 2 and is about 1 I1111 in diameter, supplying a small coC JRN product (o)CJRN = 3 at 300 GHz). The junctions showed good dc I-V characteristics, excellent submillimeter-wave responses and sensitive heterodyne mixing responses. From 254 to 350 GHz the average receiver noise temperature measured using by the standard Y-factor method was about 250 K (DSB) at 5 K. The lowest receiver noise temperature, 200 K (DSB), was obtained at around 303 GHz. Comparing NbN/A1N/NbN and Nb/A10x/Nb tunnel junction performance with the same tuning circuit showed that the frequency dependence of the receiver noise temperature agreed well in the two receivers. These results suggest that our well-controlled NbN SIS junctions can be used for terahertz mixer elements instead of Nb SIS junctions.