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Technologies

Electrically Injected Twin Photon Emitting Lasers at Room Temperature

Claire Autebert, G. Maltese, Yacine Halioua, Fabien Boitier, Aristide Lemaître, Maria I. Amanti, Carlo Sirtori, S. Ducci

Published Aug 18, 2016• 7 citations
Publisher

Abstract

On-chip generation, manipulation and detection of nonclassical states of light are some of the major issues for quantum information technologies. In this context, the maturity and versatility of semiconductor platforms are important assets towards the realization of ultra-compact devices. In this paper we present our work on the design and study of an electrically injected AlGaAs photon pair source working at room temperature. The device is characterized through its performances as a function of temperature and injected current. Finally we discuss the impact of the device’s properties on the generated quantum state. These results are very promising for the demonstration of electrically injected entangled photon sources at room temperature and let us envision the use of III-V semiconductors for a widespread diffusion of quantum communication technologies.

DOI
10.3390/technologies4030024

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On-chip generation, manipulation and detection of nonclassical states of light are some of the major issues for quantum information technologies. In this context, the maturity and versatility of semiconductor platforms are important assets towards the realization of ultra-compact devices. In this paper we present our work on the design and study of an electrically injected AlGaAs photon pair source working at room temperature. The device is characterized through its performances as a function of temperature and injected current. Finally we discuss the impact of the device’s properties on the generated quantum state. These results are very promising for the demonstration of electrically injected entangled photon sources at room temperature and let us envision the use of III-V semiconductors for a widespread diffusion of quantum communication technologies.
One of the main challenges for future quantum information technologies is the miniaturization and integration of high performance components in a single chip. In this context, electrically driven sources of nonclassical states of light have a clear advantage over optically driven ones. Here we demonstrate the first electrically driven semiconductor source of photon pairs working at room temperature and telecom wavelengths. The device is based on type-II intracavity spontaneous parametric down-conversion in an AlGaAs laser diode and generates pairs at 1.57 μm. Time-correlation measurements of the emitted pairs give an internal generation efficiency of 7×10(-11) pairs/injected electron. The capability of our platform to support the generation, manipulation, and detection of photons opens the way to the demonstration of massively parallel systems for complex quantum operations.
Integrated quantum photonics is a very active field of quantum information, communication, and processing. One of the main challenges to achieve massively parallel systems for complex operations is the generation, manipulation, and detection of many qubits within the same chip. Here, we present our last achievements on AlGaAs quantum photonic devices emitting nonclassical states of light at room temperature by spontaneous parametric down conversion (SPDC). The choice of this platform combines the advantages of a mature fabrication technology, a high nonlinear coefficient, a SPDC wavelength in the C-telecom band and the possibility of electrical injection.
Integrated quantum photonics is a very active field of quantum information science. In particular, the maturity of semiconductor technology offers a huge potential in terms of ultra-compact devices including the generation, manipulation and detection of many quantum bits. In these last years, spectacular progresses have been done using different material platforms, as AlGaAs, Silicon-On-Insulator, Silica-On-Silicon; important results have also been obtained on the integration of semiconductor waveguides and superconducting single photon detectors.
We demonstrate the direct generation of polarization-entangled photon pairs at room temperature and telecom wavelength in an AlGaAs semiconductor waveguide. The source is based on spontaneous parametric down-conversion with a counterpropagating phase-matching scheme. The quality of the two-photon state is assessed by the reconstruction of the density matrix giving a raw fidelity to a Bell state of 0.83; a theoretical model, taking into account the experimental parameters, provides ways to understand and control the amount of entanglement. Its compatibility with electrical injection, together with the high versatility of the generated two-photon state, make this source an attractive candidate for completely integrated quantum photonics devices.
In recent years, great efforts have been devoted to the miniaturization of quantum information technology on semiconductor chips. In the context of photon pair sources, the bi-exciton cascade of a quantum dot and the four wave mixing in a Silicon waveguide have been used to demonstrate the generation of entangled states. Spontaneous parametric down-conversion in III-V semiconductor waveguides combines the advantages of room temperature and telecom wavelength operation, while keeping open the possibility of electrically pumping of the device. Here we present a source consisting of a multilayer AlGaAs waveguide grown on a GaAs substrate and then chemically etched to achieve lateral confinement in a ridge. The structure design is such that a pump beam (around 759 nm), impinging on the waveguide surface with an incidence angle θ generates two counterpropagating orthogonally polarized beams (around 1518 nm). The waveguide core is surrounded by distributed Bragg reectors to enhance the pump field within the device. We demonstrate the direct emission of polarization entangled photons by pumping the device at two symmetric angles of incidence corresponding to frequency degeneracy and performing a quantum tomography measurement. Most common entanglement witnesses are satisfied and a raw fidelity of F = 0:86 to a Bell state is obtained. These results open the route to the demonstration of other interesting features of our device such as the generation of hyper-entangled states via the control of the frequency correlation degree through the spatial and spectral pump beam profile, leading to a new generation of completely integrated devices for quantum information.