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arXiv:1301.1764 · Physical Review Letters

Direct Bell States Generation on a III-V Semiconductor Chip at Room Temperature

Adeline Orieux, A. Eckstein, Aristide Lemaître, Pascal G. Filloux, Iván Favero, Giuseppe Leo, T. Coudreau, Arne Keller, P. Milman, S. Ducci

Published Apr 18, 2013• 123 citations
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Abstract

We demonstrate the direct generation of polarization-entangled photon pairs at room temperature and telecom wavelength in an AlGaAs semiconductor waveguide. The source is based on spontaneous parametric down-conversion with a counterpropagating phase-matching scheme. The quality of the two-photon state is assessed by the reconstruction of the density matrix giving a raw fidelity to a Bell state of 0.83; a theoretical model, taking into account the experimental parameters, provides ways to understand and control the amount of entanglement. Its compatibility with electrical injection, together with the high versatility of the generated two-photon state, make this source an attractive candidate for completely integrated quantum photonics devices.

DOI
10.1103/physrevlett.110.160502

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We demonstrate the direct generation of polarization-entangled photon pairs at room temperature and telecom wavelength in an AlGaAs semiconductor waveguide. The source is based on spontaneous parametric down-conversion with a counterpropagating phase-matching scheme. The quality of the two-photon state is assessed by the reconstruction of the density matrix giving a raw fidelity to a Bell state of 0.83; a theoretical model, taking into account the experimental parameters, provides ways to understand and control the amount of entanglement. Its compatibility with electrical injection, together with the high versatility of the generated two-photon state, make this source an attractive candidate for completely integrated quantum photonics devices.
Summary form only given. In these last years, a great deal of effort has been devoted to the miniaturization of quantum information technology on semiconductor chips. In the context of photon pair sources, the bi-exciton cascade of a quantum dot and the four-wave mixing in Silicon waveguides have been used to demonstrate the generation of entangled states. Spontaneous parametric down-conversion in III-V semiconductor waveguides combines the advantages of room temperature and telecom wavelength operation, while keeping open the possibility of electrically pumping of the device. Here we present a source consisting of a multilayer AlGaAs waveguide grown on a GaAs substrate and then chemically etched to achieve lateral confinement in a ridge. The structure design is such that a pump beam (around 775 nm), impinging on the surface of the waveguide with an incidence angle θ, generates two counterpropagating orthogonally polarized beams (around 1550 nm). The waveguide core is surrounded by distributed Bragg reflectors to enhance the pump field. We demonstrate the direct emission of polarization entangled photons by pumping the device with two symmetric angles of incidence corresponding to frequency degeneracy and performing a quantum tomography measurement. Most common entanglement witnesses are satisfied and a raw fidelity of 0.8 to the Bell state ( Hν +eiφ vx ) is obtained. A theoretical model, taking into account the experimental parameters, provides ways to understand and control the amount of entanglement.These results open the route to the demonstration of other interesting features of our device such as the generation of hyper-entangled states via the control of the frequency correlation degree through the spatial and spectral pump beam profile, leading to a new generation of completely integrated devices for quantum information.
In recent years, great efforts have been devoted to the miniaturization of quantum information technology on semiconductor chips. In the context of photon pair sources, the bi-exciton cascade of a quantum dot and the four wave mixing in a Silicon waveguide have been used to demonstrate the generation of entangled states. Spontaneous parametric down-conversion in III-V semiconductor waveguides combines the advantages of room temperature and telecom wavelength operation, while keeping open the possibility of electrically pumping of the device. Here we present a source consisting of a multilayer AlGaAs waveguide grown on a GaAs substrate and then chemically etched to achieve lateral confinement in a ridge. The structure design is such that a pump beam (around 759 nm), impinging on the waveguide surface with an incidence angle θ generates two counterpropagating orthogonally polarized beams (around 1518 nm). The waveguide core is surrounded by distributed Bragg reectors to enhance the pump field within the device. We demonstrate the direct emission of polarization entangled photons by pumping the device at two symmetric angles of incidence corresponding to frequency degeneracy and performing a quantum tomography measurement. Most common entanglement witnesses are satisfied and a raw fidelity of F = 0:86 to a Bell state is obtained. These results open the route to the demonstration of other interesting features of our device such as the generation of hyper-entangled states via the control of the frequency correlation degree through the spatial and spectral pump beam profile, leading to a new generation of completely integrated devices for quantum information.
We demonstrate a chip-integrated semiconductor source that combines polarization and frequency entanglement, allowing the generation of entangled biphoton states in a hybrid degree of freedom without post-manipulation. Our AlGaAs device is based on type-II spontaneous parametric downconversion in a counterpropagating phase-matching scheme in which the modal birefringence lifts the degeneracy between the two possible nonlinear interactions. This allows the direct generation of polarization–frequency entangled photons at room temperature and telecom wavelength, and in two distinct spatial modes, offering enhanced flexibility for quantum information protocols. The state entanglement is quantified by a combined measurement of the joint spectrum and Hong–Ou–Mandel interference (raw visibility 70.1 % ± 1.1 % ) of the biphotons, allowing to reconstruct a restricted density matrix in the hybrid polarization–frequency space.
The miniaturization of quantum information technology is a subject attracting a growing attention. The exploitation of spontaneous parametric down conversion in AlGaAs waveguides to generate photon pairs presents several advantages: high nonlinear susceptibility, room-temperature operation and high emission directionality in the telecom range. In this work we will present our recent results on three different kinds of AlGaAs devices: a selectively oxidized source based on form birefringence, a waveguide based on modal phase matching and a microcavity-based source based on counterpropagating phase matching. We will discuss and compare the figures of merit characterizing the three devices for quantum communication applications.
One of the main challenges for future quantum information technologies is the miniaturization and integration of high performance components in a single chip. In this context, electrically driven sources of nonclassical states of light have a clear advantage over optically driven ones. Here we demonstrate the first electrically driven semiconductor source of photon pairs working at room temperature and telecom wavelengths. The device is based on type-II intracavity spontaneous parametric down-conversion in an AlGaAs laser diode and generates pairs at 1.57 μm. Time-correlation measurements of the emitted pairs give an internal generation efficiency of 7×10(-11) pairs/injected electron. The capability of our platform to support the generation, manipulation, and detection of photons opens the way to the demonstration of massively parallel systems for complex quantum operations.