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Conference on Lasers and Electro-Optics Europe & European Quantum Electronics Conference (CLEO/Europe-EQEC)

Bell states generation on a III-V semiconductor chip at room temperature

Adeline Orieux, Guillaume Boucher, A. Eckstein, Aristide Lemaître, Pascal G. Filloux, Iván Favero, Giuseppe Leo, T. Coudreau, Arne Keller, P. Milman, S. Ducci

Published May 1, 2013• 2 citations
Publisher

Abstract

Summary form only given. In these last years, a great deal of effort has been devoted to the miniaturization of quantum information technology on semiconductor chips. In the context of photon pair sources, the bi-exciton cascade of a quantum dot and the four-wave mixing in Silicon waveguides have been used to demonstrate the generation of entangled states. Spontaneous parametric down-conversion in III-V semiconductor waveguides combines the advantages of room temperature and telecom wavelength operation, while keeping open the possibility of electrically pumping of the device. Here we present a source consisting of a multilayer AlGaAs waveguide grown on a GaAs substrate and then chemically etched to achieve lateral confinement in a ridge. The structure design is such that a pump beam (around 775 nm), impinging on the surface of the waveguide with an incidence angle θ, generates two counterpropagating orthogonally polarized beams (around 1550 nm). The waveguide core is surrounded by distributed Bragg reflectors to enhance the pump field. We demonstrate the direct emission of polarization entangled photons by pumping the device with two symmetric angles of incidence corresponding to frequency degeneracy and performing a quantum tomography measurement. Most common entanglement witnesses are satisfied and a raw fidelity of 0.8 to the Bell state ( Hν +eiφ vx ) is obtained. A theoretical model, taking into account the experimental parameters, provides ways to understand and control the amount of entanglement.These results open the route to the demonstration of other interesting features of our device such as the generation of hyper-entangled states via the control of the frequency correlation degree through the spatial and spectral pump beam profile, leading to a new generation of completely integrated devices for quantum information.

DOI
10.1109/cleoe-iqec.2013.6801614

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Summary form only given. In these last years, a great deal of effort has been devoted to the miniaturization of quantum information technology on semiconductor chips. In the context of photon pair sources, the bi-exciton cascade of a quantum dot and the four-wave mixing in Silicon waveguides have been used to demonstrate the generation of entangled states. Spontaneous parametric down-conversion in III-V semiconductor waveguides combines the advantages of room temperature and telecom wavelength operation, while keeping open the possibility of electrically pumping of the device. Here we present a source consisting of a multilayer AlGaAs waveguide grown on a GaAs substrate and then chemically etched to achieve lateral confinement in a ridge. The structure design is such that a pump beam (around 775 nm), impinging on the surface of the waveguide with an incidence angle θ, generates two counterpropagating orthogonally polarized beams (around 1550 nm). The waveguide core is surrounded by distributed Bragg reflectors to enhance the pump field. We demonstrate the direct emission of polarization entangled photons by pumping the device with two symmetric angles of incidence corresponding to frequency degeneracy and performing a quantum tomography measurement. Most common entanglement witnesses are satisfied and a raw fidelity of 0.8 to the Bell state ( Hν +eiφ vx ) is obtained. A theoretical model, taking into account the experimental parameters, provides ways to understand and control the amount of entanglement.These results open the route to the demonstration of other interesting features of our device such as the generation of hyper-entangled states via the control of the frequency correlation degree through the spatial and spectral pump beam profile, leading to a new generation of completely integrated devices for quantum information.
In recent years, great efforts have been devoted to the miniaturization of quantum information technology on semiconductor chips. In the context of photon pair sources, the bi-exciton cascade of a quantum dot and the four wave mixing in a Silicon waveguide have been used to demonstrate the generation of entangled states. Spontaneous parametric down-conversion in III-V semiconductor waveguides combines the advantages of room temperature and telecom wavelength operation, while keeping open the possibility of electrically pumping of the device. Here we present a source consisting of a multilayer AlGaAs waveguide grown on a GaAs substrate and then chemically etched to achieve lateral confinement in a ridge. The structure design is such that a pump beam (around 759 nm), impinging on the waveguide surface with an incidence angle θ generates two counterpropagating orthogonally polarized beams (around 1518 nm). The waveguide core is surrounded by distributed Bragg reectors to enhance the pump field within the device. We demonstrate the direct emission of polarization entangled photons by pumping the device at two symmetric angles of incidence corresponding to frequency degeneracy and performing a quantum tomography measurement. Most common entanglement witnesses are satisfied and a raw fidelity of F = 0:86 to a Bell state is obtained. These results open the route to the demonstration of other interesting features of our device such as the generation of hyper-entangled states via the control of the frequency correlation degree through the spatial and spectral pump beam profile, leading to a new generation of completely integrated devices for quantum information.
We demonstrate the direct generation of polarization-entangled photon pairs at room temperature and telecom wavelength in an AlGaAs semiconductor waveguide. The source is based on spontaneous parametric down-conversion with a counterpropagating phase-matching scheme. The quality of the two-photon state is assessed by the reconstruction of the density matrix giving a raw fidelity to a Bell state of 0.83; a theoretical model, taking into account the experimental parameters, provides ways to understand and control the amount of entanglement. Its compatibility with electrical injection, together with the high versatility of the generated two-photon state, make this source an attractive candidate for completely integrated quantum photonics devices.
We demonstrate an integrated semiconductor ridge microcavity source of counterpropagating twin photons at room temperature in the telecom range. Based on type II parametric down conversion in a counterpropagating phase matching scheme with transverse pump, the device generates around 10-11 pairs/pump photons having a 0.3 nm bandwidth for a 1 mm long waveguide. The emission spectrum shows the existence of two equally probable processes, which is a preliminary step to the direct generation of Bell states. The twin character of the photons of each pair is demonstrated via a temporal correlation measurement. These results open the way to the demonstration of several interesting features associated to the counterpropagating geometry, such as the control of the frequency correlation degree via the spatial and spectral properties of the pump beam.
In the last few years considerable effort has been devoted to the miniaturization of quantum information technology on semiconductor chips; in addition, recent developments in quantum information theory have roused a growing interest in 'generalized' states of frequency correlation. Parametric generation in semiconductor waveguides allows roomtemperature operation in the telecom range. We propose and compare some microcavity-based schemes for the generation of counterpropagating photon pairs and we experimentally demonstrate a bright source emitting 1.2 × 10-11pairs/pump photon for a 1.8 mm long waveguide. The indistiguishability of the photons of the pair is measured via a Hong-Ou-Mandel two-photon interference experiment showing a visibility of 85 %. The versatility of the source to control the generated two-photon state is also discussed.
We experimentally demonstrate an integrated semiconductor source of counterpropagating twin photons in the telecom range. A pump beam impinging on top of an AlGaAs waveguide generates parametrically two counterpropagating, orthogonally polarized signal/idler guided modes. A 2 mm long waveguide emits at room temperature one average photon pair per pump pulse, with a spectral linewidth of 0.15 nm. The twin character of the emitted photons is ascertained through a time-correlation measurement. This work opens a route towards new guided-wave semiconductor quantum devices.
Quantum states of photons such as entangled and single photons are indispensable components for applications in optical quantum information processing. Being able to generate and manipulate quantum states of photons on a chip is a crucial step towards realizing real-world quantum information processing systems such as an optical quantum computer. In this thesis, theoretical and experimental research was carried out for on-chip generation of quantum states of photons via the nonlinear process of spontaneous parametric down-conversion (SPDC), including polarization entangled photons, hyperentangled photons and heralded pure single photons. A majority of the study was based on III-V semiconductor AlGaAs, which could lead to monolithic integration of pump lasers and enable electrically pump sources operating at room temperature. The generation of cross-polarized entangled photons via a type-II SPDC in an AlGaAs Bragg reflection waveguide (BRW) was first investigated. The lack of material birefringence enables the direct generation of wavelength-multiplexed polarization entangled photons with a concurrence of at least 0.77 in a bandwidth of 95 nm. Second, a technique using concurrent type-0 and type-I processes on an AlGaAs chip to generate polarization entangled photon was developed. This technique allows the generation of both co-polarized and cross-polarized entangled photons on the same chip without the need of off-chip compensation, interferometer and bandpass filter. Third, a technique of generating hyperentangled photons on an AlGaAs chip was developed by utilizing spatial modes of different guiding mechanisms. High quality entanglement could be achieved with bandpass filtering of a few nanometers without off-chip phase compensation. Four, a generic technique using nonlinear photonic nanowires to engineer two-photon quantum states was proposed. Via dispersion engineering which controls the group velocity of each mode, maximally entangled polarization entangled photons and pure heralded single photons can be generated on-chip. Design examples were applied to III-V semiconductor and ferroelectric materials. Last, a strategy to enhance the bandwidths of wavelength conversion and SPDC spectrum was developed by tapering the waveguides. Combined with further integration of pump lasers, photonic circuits and detectors, the techniques developed in this thesis provides a viable route to achieve fully integrated generation and manipulations of photonic quantum qubits.