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On-chip Generation of Quantum States of Photons

Dongpeng Kang

Published Jun 1, 2015• 0 citations
OpenAlex

Abstract

Quantum states of photons such as entangled and single photons are indispensable components for applications in optical quantum information processing. Being able to generate and manipulate quantum states of photons on a chip is a crucial step towards realizing real-world quantum information processing systems such as an optical quantum computer. In this thesis, theoretical and experimental research was carried out for on-chip generation of quantum states of photons via the nonlinear process of spontaneous parametric down-conversion (SPDC), including polarization entangled photons, hyperentangled photons and heralded pure single photons. A majority of the study was based on III-V semiconductor AlGaAs, which could lead to monolithic integration of pump lasers and enable electrically pump sources operating at room temperature. The generation of cross-polarized entangled photons via a type-II SPDC in an AlGaAs Bragg reflection waveguide (BRW) was first investigated. The lack of material birefringence enables the direct generation of wavelength-multiplexed polarization entangled photons with a concurrence of at least 0.77 in a bandwidth of 95 nm. Second, a technique using concurrent type-0 and type-I processes on an AlGaAs chip to generate polarization entangled photon was developed. This technique allows the generation of both co-polarized and cross-polarized entangled photons on the same chip without the need of off-chip compensation, interferometer and bandpass filter. Third, a technique of generating hyperentangled photons on an AlGaAs chip was developed by utilizing spatial modes of different guiding mechanisms. High quality entanglement could be achieved with bandpass filtering of a few nanometers without off-chip phase compensation. Four, a generic technique using nonlinear photonic nanowires to engineer two-photon quantum states was proposed. Via dispersion engineering which controls the group velocity of each mode, maximally entangled polarization entangled photons and pure heralded single photons can be generated on-chip. Design examples were applied to III-V semiconductor and ferroelectric materials. Last, a strategy to enhance the bandwidths of wavelength conversion and SPDC spectrum was developed by tapering the waveguides. Combined with further integration of pump lasers, photonic circuits and detectors, the techniques developed in this thesis provides a viable route to achieve fully integrated generation and manipulations of photonic quantum qubits.

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Quantum states of photons such as entangled and single photons are indispensable components for applications in optical quantum information processing. Being able to generate and manipulate quantum states of photons on a chip is a crucial step towards realizing real-world quantum information processing systems such as an optical quantum computer. In this thesis, theoretical and experimental research was carried out for on-chip generation of quantum states of photons via the nonlinear process of spontaneous parametric down-conversion (SPDC), including polarization entangled photons, hyperentangled photons and heralded pure single photons. A majority of the study was based on III-V semiconductor AlGaAs, which could lead to monolithic integration of pump lasers and enable electrically pump sources operating at room temperature. The generation of cross-polarized entangled photons via a type-II SPDC in an AlGaAs Bragg reflection waveguide (BRW) was first investigated. The lack of material birefringence enables the direct generation of wavelength-multiplexed polarization entangled photons with a concurrence of at least 0.77 in a bandwidth of 95 nm. Second, a technique using concurrent type-0 and type-I processes on an AlGaAs chip to generate polarization entangled photon was developed. This technique allows the generation of both co-polarized and cross-polarized entangled photons on the same chip without the need of off-chip compensation, interferometer and bandpass filter. Third, a technique of generating hyperentangled photons on an AlGaAs chip was developed by utilizing spatial modes of different guiding mechanisms. High quality entanglement could be achieved with bandpass filtering of a few nanometers without off-chip phase compensation. Four, a generic technique using nonlinear photonic nanowires to engineer two-photon quantum states was proposed. Via dispersion engineering which controls the group velocity of each mode, maximally entangled polarization entangled photons and pure heralded single photons can be generated on-chip. Design examples were applied to III-V semiconductor and ferroelectric materials. Last, a strategy to enhance the bandwidths of wavelength conversion and SPDC spectrum was developed by tapering the waveguides. Combined with further integration of pump lasers, photonic circuits and detectors, the techniques developed in this thesis provides a viable route to achieve fully integrated generation and manipulations of photonic quantum qubits.
Generating nonclassical states of photons such as polarization-entangled states on a monolithic chip is a crucial step towards practical applications of optical quantum information processing such as quantum computing and quantum key distribution. Here we demonstrate two polarization-entangled photon sources in a single monolithic semiconductor waveguide. The first source is achieved through the concurrent utilization of two spontaneous parametric down-conversion (SPDC) processes, namely, type-0 and type-I SPDC processes. The chip can also generate polarization-entangled photons via the type-II SPDC process, enabling the generation of both copolarized- and cross-polarized polarization-entangled photons in the same device. In both cases, polarization entanglement is generated directly on the chip without the use of any off-chip compensation, interferometry, or bandpass filtering. This enables direct, chip-based generation of both Bell states $(|H,H\ensuremath{\rangle}+|V,V\ensuremath{\rangle})/\sqrt{2}$ and $(|H,V\ensuremath{\rangle}+|V,H\ensuremath{\rangle})/\sqrt{2}$ simultaneously utilizing the same pump source. In addition, based on compound semiconductors, this chip can be directly integrated with it own pump laser. This technique ushers an era of self-contained, integrated, electrically pumped, room-temperature polarization-entangled photon sources.
We propose and analyze a generic technique to engineer the two-photon quantum state generated by spontaneous parametric downconversion (SPDC) in nonlinear photonic nanowires using any suitable material system. Through dispersion engineering in nanowires, the group velocity of each photon involved in the SPDC process can be tuned such that pure heralded single photons or maximally polarization entangled photons can be directly generated on a chip. Implementations in III–V semiconductor and ferroelectric waveguides demonstrate minimal frequency correlations with Schmidt numbers of ∼1 for heralded single photons, and maximal entanglement with concurrences of ∼1 for polarization entangled photons.
Generating entangled photons on monolithic chips is a significant progress towards real-life applications of optical quantum information processing such as quantum key distribution and quantum computing. Here we present our recent achievements in generating polarization entangled photons on monolithic III-V semiconductor chips without any off-chip component. We demonstrate the direct generation of broadband polarization entangled photons from a semiconductor chip for the first time with a record degree of entanglement. We also show an alternative approach for polarization entangled photon generation on the same epitaxial structure, which enabled a single chip generating both co-polarized and cross-polarized entangled photons. With recent progress on pump laser integration, our results pave the way for fully integrated entangled photon sources in the foreseeable future.
The demand for integrated photonic chips combining the generation and manipulation of quantum states of light is steadily increasing, driven by the need for compact and scalable platforms for quantum information technologies. While photonic circuits with diverse functionalities are being developed in different single material platforms, it has become crucial to realize hybrid photonic circuits that harness the advantages of multiple materials while mitigating their respective weaknesses, resulting in enhanced capabilities. Here, we demonstrate a hybrid III-V/Silicon quantum photonic device combining the strong second-order nonlinearity and direct bandgap of the III-V semiconductor platform with the high maturity and CMOS compatibility of the silicon photonic platform. Our device embeds the spontaneous parametric down-conversion (SPDC) of photon pairs into an AlGaAs source and their vertical routing to an adhesively-bonded silicon-on-insulator circuitry, within an evanescent coupling scheme managing both polarization states. This enables the on-chip generation of broadband (> 40 nm) telecom photons by type 0 and type 2 SPDC from the hybrid device, at room temperature and with internal pair generation rates exceeding 10510^5105 s−1s^{-1}s−1 for both types, while the pump beam is strongly rejected. Two-photon interference with 92% visibility (and up to 99% upon 5 nm spectral filtering) proves the high energy-time entanglement quality of the produced quantum state, thereby enabling a wide range of quantum information applications on-chip, within an hybrid architecture compliant with electrical pumping and merging the assets of two mature and highly complementary platforms in view of out-of-the-lab deployment of quantum technologies.
Integrated quantum photonics is a key tool towards large scale quantum technologies. In this work we present an AlGaAs-based photonic circuit for on-chip generation and manipulation of broadband polarization-entangled photon pairs. The quantum state is generated by Type-II spontaneous parametric down conversion in AlGaAs Bragg reflection waveguides at telecom wavelengths and room temperature. Polarization entangled photons are manipulated over a frequency band of around 50 nm by an integrated polarizing beam splitter. We demonstrate Hong-Ou-Mandel visibility of 80% for a quantum device where the photon pairs generation and manipulation are implemented in a single chip.
The demand for integrated photonic chips combining the generation and manipulation of quantum states of light is steadily increasing, driven by the need for compact and scalable platforms for quantum information technologies. While photonic circuits with diverse functionalities are being developed in different single material platforms, it has become crucial to realize hybrid photonic circuits that harness the advantages of multiple materials while mitigating their respective weaknesses, resulting in enhanced capabilities. Here, we demonstrate a hybrid III-V/silicon quantum photonic device combining the strong second-order nonlinearity and direct band gap of the III-V semiconductor platform with the high maturity and CMOS compatibility of the silicon photonic platform. Our device embeds the spontaneous parametric down-conversion (SPDC) of photon pairs into an Al Ga As source and their vertical routing to an adhesively bonded silicon-on-insulator circuitry, within an evanescent coupling scheme managing both polarization states. This enables the on-chip generation of broadband ( > 40 nm) telecom photons by type-0 and type-2 SPDC from the hybrid device, at room temperature and with internal pair generation rates exceeding 10 5 s − 1 for both types, while the pump beam is strongly rejected. Two-photon interference with 92% visibility (and up to 99% upon 5-nm spectral filtering) proves the high energy-time entanglement quality of the produced quantum state, thereby enabling a wide range of quantum information applications on chip, within a hybrid architecture compliant with electrical pumping and merging the assets of two mature and highly complementary platforms in view of out-of-the-lab deployment of quantum technologies. Published by the American Physical Society 2024