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SPIE Quantum Technologies

On-chip III-V monolithic integration of entangled photons pairs sources and polarizing beamsplitters

Maria I. Amanti, Félicien Appas, Aristide Lemaître, Martina Morassi, F. Baboux, S. Ducci

Published Jun 3, 2022• 0 citations
Publisher

Abstract

Integrated quantum photonics is a key tool towards large scale quantum technologies. In this work we present an AlGaAs-based photonic circuit for on-chip generation and manipulation of broadband polarization-entangled photon pairs. The quantum state is generated by Type-II spontaneous parametric down conversion in AlGaAs Bragg reflection waveguides at telecom wavelengths and room temperature. Polarization entangled photons are manipulated over a frequency band of around 50 nm by an integrated polarizing beam splitter. We demonstrate Hong-Ou-Mandel visibility of 80% for a quantum device where the photon pairs generation and manipulation are implemented in a single chip.

DOI
10.1117/12.2620686

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arXiv:2311.12718•Nov 21, 2023•1 citation
Integrated quantum photonics is a key tool towards large scale quantum technologies. In this work we present an AlGaAs-based photonic circuit for on-chip generation and manipulation of broadband polarization-entangled photon pairs. The quantum state is generated by Type-II spontaneous parametric down conversion in AlGaAs Bragg reflection waveguides at telecom wavelengths and room temperature. Polarization entangled photons are manipulated over a frequency band of around 50 nm by an integrated polarizing beam splitter. We demonstrate Hong-Ou-Mandel visibility of 80% for a quantum device where the photon pairs generation and manipulation are implemented in a single chip.
Integrated quantum photonics is a key tool towards large scale quantum technologies. In this work we present an AlGaAs-based photonic circuit for the on-chip generation of broadband orthogonally polarized photons and the deterministic separation of the photons into separate spatial modes, facilitating their further use in protocols. We demonstrate that 85% of the pairs are deterministically separated by the chip over a full 60 nm bandwidth and we assess the chip operation in the quantum regime via a Hong-Ou-Mandel experiment displaying a raw visibility of 75.5% over the same full bandwidth.
We demonstrate a monolithic III-V photonic circuit combining a heralded single photon source with a beamsplitter, at room temperature and telecom wavelength. Pulsed parametric down-conversion in an AlGaAs waveguide generates counterpropagating photons, one of which is used to herald the injection of its twin into the beamsplitter. We use this configuration to implement an integrated Hanbury-Brown and Twiss experiment, yielding a heralded second-order correlation gher(2)(0)=0.10±0.02 that confirms single-photon operation. The demonstrated generation and manipulation of quantum states on a single III-V semiconductor chip opens promising avenues towards real-world applications in quantum information.
Integrated photonics is playing a key role in the development of quantum technologies covering applications ranging from quantum communication to computing and from simulations to sensing. In this context, material platforms enabling the chip-scale integration of quantum components are a key issue on the way towards real-world and large-scale technological implementations. In this paper, we review our last achievements on AlGaAs Bragg reflection waveguides emitting nonclassical states of light by spontaneous parametric down conversion. The choice of this platform combines the advantages of a mature fabrication technology, room temperature operation, emission in the telecom C-Band and compliance with electrical injection. We demonstrate the ability of these devices to generate a large variety of quantum states spanning from biphoton frequency combs to broadband polarization entanglement enabling promising applications in quantum processing as well as flexible quantum networks.
Quantum states of photons such as entangled and single photons are indispensable components for applications in optical quantum information processing. Being able to generate and manipulate quantum states of photons on a chip is a crucial step towards realizing real-world quantum information processing systems such as an optical quantum computer. In this thesis, theoretical and experimental research was carried out for on-chip generation of quantum states of photons via the nonlinear process of spontaneous parametric down-conversion (SPDC), including polarization entangled photons, hyperentangled photons and heralded pure single photons. A majority of the study was based on III-V semiconductor AlGaAs, which could lead to monolithic integration of pump lasers and enable electrically pump sources operating at room temperature. The generation of cross-polarized entangled photons via a type-II SPDC in an AlGaAs Bragg reflection waveguide (BRW) was first investigated. The lack of material birefringence enables the direct generation of wavelength-multiplexed polarization entangled photons with a concurrence of at least 0.77 in a bandwidth of 95 nm. Second, a technique using concurrent type-0 and type-I processes on an AlGaAs chip to generate polarization entangled photon was developed. This technique allows the generation of both co-polarized and cross-polarized entangled photons on the same chip without the need of off-chip compensation, interferometer and bandpass filter. Third, a technique of generating hyperentangled photons on an AlGaAs chip was developed by utilizing spatial modes of different guiding mechanisms. High quality entanglement could be achieved with bandpass filtering of a few nanometers without off-chip phase compensation. Four, a generic technique using nonlinear photonic nanowires to engineer two-photon quantum states was proposed. Via dispersion engineering which controls the group velocity of each mode, maximally entangled polarization entangled photons and pure heralded single photons can be generated on-chip. Design examples were applied to III-V semiconductor and ferroelectric materials. Last, a strategy to enhance the bandwidths of wavelength conversion and SPDC spectrum was developed by tapering the waveguides. Combined with further integration of pump lasers, photonic circuits and detectors, the techniques developed in this thesis provides a viable route to achieve fully integrated generation and manipulations of photonic quantum qubits.
The ability to combine various advanced functionalities on a single chip is a key issue for both classical and quantum photonic-based technologies. On-chip generation and handling of orthogonally polarized photon pairs, one of the most used resources in quantum information protocols, is a central challenge for the development of scalable quantum photonics circuits; in particular, the management of spectrally broadband biphoton states, an asset attracting growing attention for its capability to convey large-scale quantum information in a single spatial mode, is missing. Here, we demonstrate a monolithic AlGaAs chip, including the generation of broadband orthogonally polarized photon pairs and their polarization splitting; 85% of the pairs are deterministically separated by the chip over a 60 nm bandwidth. The quality of the two-photon interference at the chip output is assessed via a Hong–Ou–Mandel experiment displaying a raw visibility of 75.5% over the same bandwidth. These results, obtained for the first time at room temperature and telecom wavelength, in a platform combining strong confinement, high second-order nonlinearity, electro-optic effect, and direct bandgap, confirm the validity of our approach and represent a significant step toward miniaturized and easy-to-handle photonic devices working in the broadband regime for quantum information processing.
The demand for integrated photonic chips combining the generation and manipulation of quantum states of light is steadily increasing, driven by the need for compact and scalable platforms for quantum information technologies. While photonic circuits with diverse functionalities are being developed in different single material platforms, it has become crucial to realize hybrid photonic circuits that harness the advantages of multiple materials while mitigating their respective weaknesses, resulting in enhanced capabilities. Here, we demonstrate a hybrid III-V/Silicon quantum photonic device combining the strong second-order nonlinearity and direct bandgap of the III-V semiconductor platform with the high maturity and CMOS compatibility of the silicon photonic platform. Our device embeds the spontaneous parametric down-conversion (SPDC) of photon pairs into an AlGaAs source and their vertical routing to an adhesively-bonded silicon-on-insulator circuitry, within an evanescent coupling scheme managing both polarization states. This enables the on-chip generation of broadband (> 40 nm) telecom photons by type 0 and type 2 SPDC from the hybrid device, at room temperature and with internal pair generation rates exceeding 10510^5105 s−1s^{-1}s−1 for both types, while the pump beam is strongly rejected. Two-photon interference with 92% visibility (and up to 99% upon 5 nm spectral filtering) proves the high energy-time entanglement quality of the produced quantum state, thereby enabling a wide range of quantum information applications on-chip, within an hybrid architecture compliant with electrical pumping and merging the assets of two mature and highly complementary platforms in view of out-of-the-lab deployment of quantum technologies.