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Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE

Semiconductor sources of two-photon states at room temperature in the telecom range

Adeline Orieux, Marc Savanier, C. E. R. Souza, A. Andronico, Aristide Lemaître, Pascal G. Filloux, C. Manquest, Iván Favero, Giuseppe Leo, S. Ducci

Published Nov 30, 2011• 0 citations
Publisher

Abstract

The miniaturization of quantum information technology is a subject attracting a growing attention. The exploitation of spontaneous parametric down conversion in AlGaAs waveguides to generate photon pairs presents several advantages: high nonlinear susceptibility, room-temperature operation and high emission directionality in the telecom range. In this work we will present our recent results on three different kinds of AlGaAs devices: a selectively oxidized source based on form birefringence, a waveguide based on modal phase matching and a microcavity-based source based on counterpropagating phase matching. We will discuss and compare the figures of merit characterizing the three devices for quantum communication applications.

DOI
10.1117/12.914458

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The miniaturization of quantum information technology is a subject attracting a growing attention. The exploitation of spontaneous parametric down conversion in AlGaAs waveguides to generate photon pairs presents several advantages: high nonlinear susceptibility, room-temperature operation and high emission directionality in the telecom range. In this work we will present our recent results on three different kinds of AlGaAs devices: a selectively oxidized source based on form birefringence, a waveguide based on modal phase matching and a microcavity-based source based on counterpropagating phase matching. We will discuss and compare the figures of merit characterizing the three devices for quantum communication applications.
In the last few years considerable effort has been devoted to the miniaturization of quantum information technology on semiconductor chips; in addition, recent developments in quantum information theory have roused a growing interest in 'generalized' states of frequency correlation. Parametric generation in semiconductor waveguides allows roomtemperature operation in the telecom range. We propose and compare some microcavity-based schemes for the generation of counterpropagating photon pairs and we experimentally demonstrate a bright source emitting 1.2 × 10-11pairs/pump photon for a 1.8 mm long waveguide. The indistiguishability of the photons of the pair is measured via a Hong-Ou-Mandel two-photon interference experiment showing a visibility of 85 %. The versatility of the source to control the generated two-photon state is also discussed.
We demonstrate the direct generation of polarization-entangled photon pairs at room temperature and telecom wavelength in an AlGaAs semiconductor waveguide. The source is based on spontaneous parametric down-conversion with a counterpropagating phase-matching scheme. The quality of the two-photon state is assessed by the reconstruction of the density matrix giving a raw fidelity to a Bell state of 0.83; a theoretical model, taking into account the experimental parameters, provides ways to understand and control the amount of entanglement. Its compatibility with electrical injection, together with the high versatility of the generated two-photon state, make this source an attractive candidate for completely integrated quantum photonics devices.
We experimentally demonstrate an integrated semiconductor ridge microcavity source of counterpropagating twin photons at room temperature in the telecom range. Based on parametric down conversion with a counterpropagating phase-matching, pump photons generate photon pairs with an efficiency of about 10^(-11) and a spectral linewidth of 0.3 nm for a 1mm long sample. The indistiguishability of the photons of the pair are measured via a two-photon interference experiment showing a visibility of 85%. This work opens a route towards new guided-wave semiconductor quantum devices.
Integrated quantum photonics is a very active field of quantum information, communication, and processing. One of the main challenges to achieve massively parallel systems for complex operations is the generation, manipulation, and detection of many qubits within the same chip. Here, we present our last achievements on AlGaAs quantum photonic devices emitting nonclassical states of light at room temperature by spontaneous parametric down conversion (SPDC). The choice of this platform combines the advantages of a mature fabrication technology, a high nonlinear coefficient, a SPDC wavelength in the C-telecom band and the possibility of electrical injection.
One of the main challenges for future quantum information technologies is the miniaturization and integration of high performance components in a single chip. In this context, electrically driven sources of nonclassical states of light have a clear advantage over optically driven ones. Here we demonstrate the first electrically driven semiconductor source of photon pairs working at room temperature and telecom wavelengths. The device is based on type-II intracavity spontaneous parametric down-conversion in an AlGaAs laser diode and generates pairs at 1.57 μm. Time-correlation measurements of the emitted pairs give an internal generation efficiency of 7×10(-11) pairs/injected electron. The capability of our platform to support the generation, manipulation, and detection of photons opens the way to the demonstration of massively parallel systems for complex quantum operations.
One of the main issues in the domain of quantum information and communication is the generation, manipulation and detection of several qubits on a single chip. Several approaches are currently investigated for the implementation of qubits on different types of physical supports and a variety of quantum information technologies are under development: for quantum memories, spectacular advances have been done on trapped atoms and ions, while to transmit information, photons are the ideal support thanks to their high speed of propagation and their almost immunity against decoherence. My thesis work has been focused on the conception, fabrication and characterization of a miniaturized semiconductor source of entangled photons, working at room temperature and telecom wavelengths. First the theoretical concepts relevant to understand the work are described (chapter 1). Then the conception and fabrication procedures are given (chapter 2). Chapter 3 presents the optoelectronics characterization of the device under electrical pumping, and chapter 4 the results on the optical losses measurements and the nonlinear optical characterization (second harmonic generation, spontaneous parametric down conversion and joint spectral intensity reconstruction). Chapters 5 and 6 focus on the characterization of the quantum state generated by a passive sample (demonstration of indistinguishability and energy-time entanglement) and its utilization in a multi- user quantum key distribution protocol (polarization entanglement). Finally the work on the first electrically driven photon pairs source emitting in the telecom range and working at room temperature is presented (chapter 7).