Challenges
Datasets
Workspaces
Papers
Discussions
Leaderboard
Log inSign up
Challenges
Datasets
Workspaces
Papers
Discussions
Leaderboard
Blog
Job Board
Q3AS

© 2026 Aqora Quantum S.A.S.

TermsPrivacyLegal Notice

Direct Bell States Generation on a III-V Semiconductor Chip at Room Temperature

Adeline Orieux, Guillaume Boucher, A. Eckstein, Aristide Lemaître, Pascal G. Filloux, Iván Favero, Giuseppe Leo, T. Coudreau, Arne Keller, P. Milman, S. Ducci

Published Jan 1, 2013• 10 citations
Publisher

Abstract

We demonstrate the generation of polarization entangled Bell states at room temperature and telecom wavelength on a 3-5 semiconductor chip. A theoretical model provides ways to understand and control the amount of entanglement.
DOI
10.1364/cleo_qels.2013.qtu3c.2

Related papers

Direct Bell States Generation on a III-V Semiconductor Chip at Room Temperature

Adeline Orieux, A. Eckstein, Aristide Lemaître +7 more

We demonstrate the direct generation of polarization-entangled photon pairs at room temperature and telecom wavelength in an AlGaAs semiconductor waveguide. The source is based on spontaneous parametric down-conversion with a counterpropagating phase-matching scheme. The quality of the two-photon state is assessed by the reconstruction of the density matrix giving a raw fidelity to a Bell state of 0.83; a theoretical model, taking into account the experimental parameters, provides ways to understand and control the amount of entanglement. Its compatibility with electrical injection, together with the high versatility of the generated two-photon state, make this source an attractive candidate for completely integrated quantum photonics devices.

arXiv:1301.1764•Physical Review Letters•Apr 18, 2013•123 citations

Bell states generation on a III-V semiconductor chip at room temperature

Adeline Orieux, Guillaume Boucher, A. Eckstein +8 more

Summary form only given. In these last years, a great deal of effort has been devoted to the miniaturization of quantum information technology on semiconductor chips. In the context of photon pair sources, the bi-exciton cascade of a quantum dot and the four-wave mixing in Silicon waveguides have been used to demonstrate the generation of entangled states. Spontaneous parametric down-conversion in III-V semiconductor waveguides combines the advantages of room temperature and telecom wavelength operation, while keeping open the possibility of electrically pumping of the device. Here we present a source consisting of a multilayer AlGaAs waveguide grown on a GaAs substrate and then chemically etched to achieve lateral confinement in a ridge. The structure design is such that a pump beam (around 775 nm), impinging on the surface of the waveguide with an incidence angle θ, generates two counterpropagating orthogonally polarized beams (around 1550 nm). The waveguide core is surrounded by distributed Bragg reflectors to enhance the pump field. We demonstrate the direct emission of polarization entangled photons by pumping the device with two symmetric angles of incidence corresponding to frequency degeneracy and performing a quantum tomography measurement. Most common entanglement witnesses are satisfied and a raw fidelity of 0.8 to the Bell state ( Hν +eiφ vx ) is obtained. A theoretical model, taking into account the experimental parameters, provides ways to understand and control the amount of entanglement.These results open the route to the demonstration of other interesting features of our device such as the generation of hyper-entangled states via the control of the frequency correlation degree through the spatial and spectral pump beam profile, leading to a new generation of completely integrated devices for quantum information.

Conference on Lasers and Electro-Optics Europe & European Quantum Electronics Conference (CLEO/Europe-EQEC)•May 1, 2013•2 citations

An Integrated Quantum Light Source of Frequency Degenerate Polarization Entangled Bell States

Lingjie Yu, Jingyuan Zheng, Xu Liu +2 more

An integrated quantum light source of telecom band polarization entangled Bell state generation is proposed and demonstrated on a SOI chip. Its output state can be switched between two frequency-degenerate Bell states.

Conference on Lasers and Electro-Optics•Jan 1, 2020•0 citations

On-chip generation of frequency-entangled qudits

Claire Autebert, A. Minneci, G. Maltese +7 more

We demonstrate monolithic AlGaAs sources generating high dimensional frequency-entangled states in the telecom band at room temperature. The reflectivity and dispersion properties of our devices allow producing qudits with d of several tens.

Quantum Information and Measurement (QIM)•Jan 1, 2017•1 citation

Multi-User Quantum Key Distribution With Entangled Photons From A Semiconductor Chip

Claire Autebert, Julien Trapateau, Adeline Orieux +5 more

We demonstrate multi-user entanglement-based quantum key distribution using a AlGaAs chip emitting polarization entangled photon pairs at telecom wavelength and a standard dense wavelength division demultiplexer.

Quantum Information and Measurement (QIM)•Jan 1, 2017•0 citations

Generating entangled photons on monolithic chips

Dongpeng Kang, Nima Zareian, Amr Saher Helmy

Generating entangled photons on monolithic chips is a significant progress towards real-life applications of optical quantum information processing such as quantum key distribution and quantum computing. Here we present our recent achievements in generating polarization entangled photons on monolithic III-V semiconductor chips without any off-chip component. We demonstrate the direct generation of broadband polarization entangled photons from a semiconductor chip for the first time with a record degree of entanglement. We also show an alternative approach for polarization entangled photon generation on the same epitaxial structure, which enabled a single chip generating both co-polarized and cross-polarized entangled photons. With recent progress on pump laser integration, our results pave the way for fully integrated entangled photon sources in the foreseeable future.

Quantum Computing, Communication, and Simulation•Feb 22, 2018•1 citation
We demonstrate the direct generation of polarization-entangled photon pairs at room temperature and telecom wavelength in an AlGaAs semiconductor waveguide. The source is based on spontaneous parametric down-conversion with a counterpropagating phase-matching scheme. The quality of the two-photon state is assessed by the reconstruction of the density matrix giving a raw fidelity to a Bell state of 0.83; a theoretical model, taking into account the experimental parameters, provides ways to understand and control the amount of entanglement. Its compatibility with electrical injection, together with the high versatility of the generated two-photon state, make this source an attractive candidate for completely integrated quantum photonics devices.
Summary form only given. In these last years, a great deal of effort has been devoted to the miniaturization of quantum information technology on semiconductor chips. In the context of photon pair sources, the bi-exciton cascade of a quantum dot and the four-wave mixing in Silicon waveguides have been used to demonstrate the generation of entangled states. Spontaneous parametric down-conversion in III-V semiconductor waveguides combines the advantages of room temperature and telecom wavelength operation, while keeping open the possibility of electrically pumping of the device. Here we present a source consisting of a multilayer AlGaAs waveguide grown on a GaAs substrate and then chemically etched to achieve lateral confinement in a ridge. The structure design is such that a pump beam (around 775 nm), impinging on the surface of the waveguide with an incidence angle θ, generates two counterpropagating orthogonally polarized beams (around 1550 nm). The waveguide core is surrounded by distributed Bragg reflectors to enhance the pump field. We demonstrate the direct emission of polarization entangled photons by pumping the device with two symmetric angles of incidence corresponding to frequency degeneracy and performing a quantum tomography measurement. Most common entanglement witnesses are satisfied and a raw fidelity of 0.8 to the Bell state ( Hν +eiφ vx ) is obtained. A theoretical model, taking into account the experimental parameters, provides ways to understand and control the amount of entanglement.These results open the route to the demonstration of other interesting features of our device such as the generation of hyper-entangled states via the control of the frequency correlation degree through the spatial and spectral pump beam profile, leading to a new generation of completely integrated devices for quantum information.
Generating entangled photons on monolithic chips is a significant progress towards real-life applications of optical quantum information processing such as quantum key distribution and quantum computing. Here we present our recent achievements in generating polarization entangled photons on monolithic III-V semiconductor chips without any off-chip component. We demonstrate the direct generation of broadband polarization entangled photons from a semiconductor chip for the first time with a record degree of entanglement. We also show an alternative approach for polarization entangled photon generation on the same epitaxial structure, which enabled a single chip generating both co-polarized and cross-polarized entangled photons. With recent progress on pump laser integration, our results pave the way for fully integrated entangled photon sources in the foreseeable future.