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Conference on Lasers and Electro-Optics

Readout of a qubit final state by observing exciton spontaneous emissions after resonant excitation

K. Kuroda, Takashi Kuroda, Kazuaki Sakoda, G. Kido, Nobuyuki Koguchi

Published Aug 26, 2007• 0 citations
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Abstract

We observed spontaneous emissions from a single quantum dot to read out a final state of an exciton qubit. To capture weak emissions from quantum dots, the reflection of an excitation laser were reduced by applying obliquely incident geometry and crossed polarization configuration. Rabi oscillations were observed in the emissions.

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We report on observation of spontaneous emissions from a single quantum dot after resonant excitation. To capture weak emissions from a single quantum dot, reflection of an excitation laser was reduced by applying obliquely incident geometry and crossed polarization configuration. In addition, collected emissions were temporally resolved to be separated from residual reflection. These allowed us to realize a simple manipulation and read out of an exciton qubit. We observed an exciton Rabi oscillation in excitation amplitude dependence of the emission intensity. We determined an exciton dipole moment from the Rabi oscillation and from the emission decay time, independently. Comparison between the two values shows reasonable agreement.
The authors report on an approach to detect excitonic qubits in semiconductor quantum dots by observing spontaneous emissions from the relevant qubit level. The ground state of excitons is resonantly excited by picosecond optical pulses. Emissions from the same state are temporally resolved with picosecond time resolution. To capture weak emissions, the authors greatly suppress the elastic scattering of excitation beams, by applying obliquely incident geometry to the microphotoluminescence setup. Rabi oscillations of the ground-state excitons appear to be involved in the dependence of emission intensity on excitation amplitude.
Photoluminescence from a single semiconductor quantum dot after perfect resonant excitation has been temporally resolved with picosecond time resolution. Making use of non-confocal geometry for the micro photoluminescence setup, we can greatly remove the elastic scattering component, and successfully capture the resonantly-excited spontaneous emission from a single quantum dot. The emission intensity as a function of coherent photoinjection shows peculiar oscillatory dependence, i.e., Rabi oscillations of ground-state excitons. The transition strength of the groundstate exciton is precisely determined through the analysis. The value indicates a good agreement with that expected by the radiative decay rate of the quantum dots.
Measurements of optical Rabi oscillations in the excited states of individual InGaAs are presented. Under pulsed resonant excitation we observe Rabi oscillations with increasing pulse area, which are damped after the first maximum and minimum. We show that the observed damping comes from an additional non-resonant generation of carriers in the quantum dot. The observation of Rabi oscillations provides an efficient way of directly measuring the excitonic transitions' dipole moments. A polarization anisotropy of the dipole moment is resolved in some of the quantum dots.
Summary form only given. We use transient nonlinear optical spectroscopy to demonstrate Rabi oscillations between each of the dipole coupled states, corresponding to qubit rotations. The interface fluctuation GaAs quantum dots are probed with sub-micron spatial resolution. The resonant excitation of the biexciton requires a two-color scheme in a hyper Raman gain configuration. To demonstrate exciton Rabi oscillations, the laser wavelength is fixed at the exciton resonance. Exciton and biexciton Rabi oscillations correspond to qubit rotations of the |00> to |01> or |10> state and the |01> or |10> to |11> state respectively, depending on the polarization of the excitation field.