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Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE

Resonantly excited emissions from a GaAs quantum dot and an exciton dipole moment

K. Kuroda, Takashi Kuroda, Kazuaki Sakoda, G. Kido, Nobuyuki Koguchi

Published Jan 30, 2008• 0 citations
Publisher

Abstract

We report on observation of spontaneous emissions from a single quantum dot after resonant excitation. To capture weak emissions from a single quantum dot, reflection of an excitation laser was reduced by applying obliquely incident geometry and crossed polarization configuration. In addition, collected emissions were temporally resolved to be separated from residual reflection. These allowed us to realize a simple manipulation and read out of an exciton qubit. We observed an exciton Rabi oscillation in excitation amplitude dependence of the emission intensity. We determined an exciton dipole moment from the Rabi oscillation and from the emission decay time, independently. Comparison between the two values shows reasonable agreement.

DOI
10.1117/12.763016

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We report on observation of spontaneous emissions from a single quantum dot after resonant excitation. To capture weak emissions from a single quantum dot, reflection of an excitation laser was reduced by applying obliquely incident geometry and crossed polarization configuration. In addition, collected emissions were temporally resolved to be separated from residual reflection. These allowed us to realize a simple manipulation and read out of an exciton qubit. We observed an exciton Rabi oscillation in excitation amplitude dependence of the emission intensity. We determined an exciton dipole moment from the Rabi oscillation and from the emission decay time, independently. Comparison between the two values shows reasonable agreement.
The authors report on an approach to detect excitonic qubits in semiconductor quantum dots by observing spontaneous emissions from the relevant qubit level. The ground state of excitons is resonantly excited by picosecond optical pulses. Emissions from the same state are temporally resolved with picosecond time resolution. To capture weak emissions, the authors greatly suppress the elastic scattering of excitation beams, by applying obliquely incident geometry to the microphotoluminescence setup. Rabi oscillations of the ground-state excitons appear to be involved in the dependence of emission intensity on excitation amplitude.
Photoluminescence from a single semiconductor quantum dot after perfect resonant excitation has been temporally resolved with picosecond time resolution. Making use of non-confocal geometry for the micro photoluminescence setup, we can greatly remove the elastic scattering component, and successfully capture the resonantly-excited spontaneous emission from a single quantum dot. The emission intensity as a function of coherent photoinjection shows peculiar oscillatory dependence, i.e., Rabi oscillations of ground-state excitons. The transition strength of the groundstate exciton is precisely determined through the analysis. The value indicates a good agreement with that expected by the radiative decay rate of the quantum dots.
We report on coherent resonant emission of the fundamental exciton state in a single semiconductor GaAs quantum dot. A resonant regime with picosecond laser excitation is realized by embedding the quantum dots in a one-dimensional waveguiding structure. As the pulse intensity is increased, Rabi oscillation is observed up to three periods. The Rabi regime is achieved owing to an enhanced light-matter coupling in the waveguide but with different dynamics with respect to usual cavity quantum electrodynamics. The resonant control of the quantum dot fundamental transition opens new possibilities in quantum state manipulation and quantum optics experiments in condensed-matter physics.
Measurements of optical Rabi oscillations in the excited states of individual InGaAs are presented. Under pulsed resonant excitation we observe Rabi oscillations with increasing pulse area, which are damped after the first maximum and minimum. We show that the observed damping comes from an additional non-resonant generation of carriers in the quantum dot. The observation of Rabi oscillations provides an efficient way of directly measuring the excitonic transitions' dipole moments. A polarization anisotropy of the dipole moment is resolved in some of the quantum dots.
Summary form only given. We use transient nonlinear optical spectroscopy to demonstrate Rabi oscillations between each of the dipole coupled states, corresponding to qubit rotations. The interface fluctuation GaAs quantum dots are probed with sub-micron spatial resolution. The resonant excitation of the biexciton requires a two-color scheme in a hyper Raman gain configuration. To demonstrate exciton Rabi oscillations, the laser wavelength is fixed at the exciton resonance. Exciton and biexciton Rabi oscillations correspond to qubit rotations of the |00> to |01> or |10> state and the |01> or |10> to |11> state respectively, depending on the polarization of the excitation field.