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Communications in Theoretical Physics

Ultra-Low Threshold Optical Bistability and Multi-Stability in Dielecrtric Slab Doped with Semiconductor Quantum Well

Rajab Nasehi

Published Jul 1, 2016• 3 citations
Publisher

Abstract

Abstract A scheme for switching of the optical bistability (OB) and multi-stability (OM) in a dielectric slab doped with a three-level ladder-configuration n-doped semiconductor quantum well is simulated. It is shown that the bistable behavior of the system in dielectric slab can be controlled via amplitude or relative phase of applied fields. This optical system may provide some new possibilities for test the switching process.

DOI
10.1088/0253-6102/66/1/129

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The optical bistability (OB) behavior of a dielectric slab doped with quantum dot (QD) molecules is investigated in the presence of the inter-dot tunneling effect. It is shown that the threshold point of OB reduces by increasing inter-dot tunneling as well as by reducing the slab thickness. It is worth noting that the threshold of OB in a slab doped with QD molecules is smaller, by at least one order of magnitude, in respect to free QD molecules. We find that the inter-dot tunneling induces a negative group delay to the reflected pulse and it propagates in the superluminal region. Such simple control can be used in all optical switching.
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We proposed a new model for controlling the optical bistability (OB) and optical multistability (OM) in a defect slab doped with four-level GaAs/AlGaAs multiple quantum wells with 15 periods of 17.5 nm GaAs wells and 15-nm Al 0.3 Ga 0.7 As barriers. The effects of biexciton energy renormalization, exciton spin relaxation, and thickness of the slab on the OB and OM properties of the defect slab were theoretically investigated. We found that the transition from OB to OM or vice versa is possible by adjusting the controllable parameters in a lab. Moreover, the transmission, reflection, and absorption properties of the weak probe light through the slab were also discussed in detail.
The theoretical investigation of controlling the optical bistability (OB) and optical multistability (OM) in a dielectric medium doped with nanodiamond nitrogen vacancy centres under optical excitation are reported. The shape of the OB curve from dielectric slab can be tuned by changing the external magnetic field and polarization of the control beam. The effect of the intensity of the control laser field and the frequency detuning of probe laser field on the OB and OM behaviour are also discussed in this paper. The results obtained can be used for realizing an all-optical bistable switching or development of nanoelectronic devices.