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Acta Optica Sinica

Experimental observation of mirrorless optical bistability in polycrystalline ZnSe with high absorption

Chongjin Xie

Published Jan 1, 1989• 0 citations
OpenAlex

Abstract

Experimental observation of increasing absorption optical bistability in polyory-stalline ZnSe with high absorption is reported. We found that the bistability still can be obtained when the absorption of nonlinear medium is much higher than the theoretical criterion. The dependences of switching powers on the spot radius of beam and the thickness of sample have been measured. Using the model of two imaginary-layers, experimental results are qualitatively explained.

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Journal of Applied Physics•Mar 15, 1993•6 citations
Experimental observation of increasing absorption optical bistability in polyory-stalline ZnSe with high absorption is reported. We found that the bistability still can be obtained when the absorption of nonlinear medium is much higher than the theoretical criterion. The dependences of switching powers on the spot radius of beam and the thickness of sample have been measured. Using the model of two imaginary-layers, experimental results are qualitatively explained.
For the first time, ZnSe epitaxial layers grown by molecular-beam epitaxy are shown to exhibit large contrast, low power, and extremely long-term stable thermally induced absorptive optical bistability. It is observed over a wide temperature range between 169 K and RT, with a strongly variable loop width and a switch-back adjustable to be less than 50% of the respective switch-down value. Critical slowing down as well as switch-down times are studied in dependence of the excess over the switch-down intensity values.
Abstract Results are given of the experimental study of increasing absorption optical bistability that arises from the formation of high absorption domains in bulk ZnSe and ZnCdS. A periodic domain motion causes output signal pulsations. The average domain velocity proved to be about 102 cm/s. A model that describes the behaviour of the absorption domain in semiconductors is discussed. Results of the experimental study of the domain behaviour are explained by the heat conduction regime of the model.
The excitonic nonlinearities in II-VI wide gap semiconductors have recently become an interesting research topic. Andersen et al.1 studied the saturating absorption of excitonic resonance in ZnSe single crystal films and (Zn, Mn)Se superlattices, which they attributed to Coulombic screening for the case of ZnSe film or a wide-well (Zn,Mn)Se quantum well structure at 77 K, and the Coulombic screening and phase space filling for a narrow-well structure. Gribkovskii et al.2 have observed the increase of excitonic absorption optical bistability in ZnSe film and attributed it to excitonic broadening and gap renormalization for the nonlinear mechanism. We report the first observation of optical bistability in ZnSe/ZnS MQWs grown by MOCVD on CaF2 substrates.
First reports of absorptive all-optical bistabilities in reflectance and luminescence of a Fabry-Perot cavity consisting of thin (0.70 ,cem) ZnSe film are presented. We demonstrate that the observation of bistability in the reflected beam does not require necessarily the appearance of bistability in the transmitted beam. Luminescence bistabilities, however, are observed both in the light captured Lrom the incident side 0L the film and in the light emitted from the transmission side. The bistabilities in reflection and luminescence are explained quite satisfactorily by the principle of increasing absorption due to photo-irradiation and the dependence of the luminescence intensity on a photo-thermally induced temperature change, respectively. A11 experiments were carried out at room temperature with the 488 nm line of an argon laser.
Absorptive switching and transverse structures in resonatorless optical bistability in bulk ZnSe is observed upon exciting the sample at the Urbach edge. The switching is due to nonlinear absorption induced by a temperature tuning of the band gap. We have modeled such behavior by numerically solving for the intensity, carrier density, and temperature, including both longitudinal and transverse fluctuations. Simulations show that both longitudinal and transverse heat diffusion are necessary in producing specific structures, as well as in determining the time of switching. During switching, the experiment and theory illustrate for the intensity profile the formation of a local minima on axis (hole) followed by a local maxima on axis and local minima off axis (rings). Such beam distortions and bistable switching are the result of the spatial and temporal dynamics and positive feedback existing among the absorption and heating.