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physica status solidi (b)

Optical Bistability and Formation of Localized and Moving High Absorption Domains in ZnSe and ZnCdS

Sergei E. Esipov, V. A. Stadnik

Published Dec 1, 1988• 5 citations
Publisher

Abstract

Abstract Results are given of the experimental study of increasing absorption optical bistability that arises from the formation of high absorption domains in bulk ZnSe and ZnCdS. A periodic domain motion causes output signal pulsations. The average domain velocity proved to be about 102 cm/s. A model that describes the behaviour of the absorption domain in semiconductors is discussed. Results of the experimental study of the domain behaviour are explained by the heat conduction regime of the model.

DOI
10.1002/pssb.2221500224

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Abstract Results are given of the experimental study of increasing absorption optical bistability that arises from the formation of high absorption domains in bulk ZnSe and ZnCdS. A periodic domain motion causes output signal pulsations. The average domain velocity proved to be about 102 cm/s. A model that describes the behaviour of the absorption domain in semiconductors is discussed. Results of the experimental study of the domain behaviour are explained by the heat conduction regime of the model.
The possibility of formation of a basic (stationary) and an additional (moving) high-absorption domain in an optically bistable system, based on high absorption, is demonstrated. A semiconductor with the absorption coefficient dependent on the concentration of free charge carriers in the conduction band is considered as a nonlinear medium. Under certain conditions, an optical beam passing through the stationary high-absorption domain acquires an annular profile and, after traveling a certain distance, transforms into a Gaussian beam with an intensity on the axis sufficient to switch the medium-beam system to the upper state. This moving domain periodically disappears and reappears due to diffusion processes.