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Optics and Spectroscopy

An additional moving domain induced by a high absorption domain under the action of collimated light beams

A. V. Vysloukh, Vyacheslav A. Trofimov

Published Jul 1, 2002• 0 citations
Publisher

Abstract

The possibility of formation of a basic (stationary) and an additional (moving) high-absorption domain in an optically bistable system, based on high absorption, is demonstrated. A semiconductor with the absorption coefficient dependent on the concentration of free charge carriers in the conduction band is considered as a nonlinear medium. Under certain conditions, an optical beam passing through the stationary high-absorption domain acquires an annular profile and, after traveling a certain distance, transforms into a Gaussian beam with an intensity on the axis sufficient to switch the medium-beam system to the upper state. This moving domain periodically disappears and reappears due to diffusion processes.

DOI
10.1134/1.1496729

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Optics and Spectroscopy•Sep 1, 2006•1 citation
The possibility of formation of a basic (stationary) and an additional (moving) high-absorption domain in an optically bistable system, based on high absorption, is demonstrated. A semiconductor with the absorption coefficient dependent on the concentration of free charge carriers in the conduction band is considered as a nonlinear medium. Under certain conditions, an optical beam passing through the stationary high-absorption domain acquires an annular profile and, after traveling a certain distance, transforms into a Gaussian beam with an intensity on the axis sufficient to switch the medium-beam system to the upper state. This moving domain periodically disappears and reappears due to diffusion processes.
It is shown that several longitudinal domains of high absorption are formed under certain conditions in an optically bistable element based on increasing absorption under the action of a hyper-Gaussian light beam. This is caused both by the transformation of the initial beam profile into a tubular distribution and by the diffraction of light by a nonuniform boundary of the region of high absorption. The analysis of dynamics showed the possibility of formation of quasi-stationary regions with high absorption, which exist during a certain time. These effects can lead to false data recording in three-dimensional optical recording systems.
The dynamics of switching waves in optically bistable systems on the basis of growing absorption is analyzed by quasi-optical description. A new scenario of kinks moving towards the optical beam under the action of a tubular optical beam is described. As opposed to an originally Gaussian beam focused on to the entrance face, a high intensity at the exit from the medium under the action of a collimated tubular beam is achieved due to the transformation of its profile. The structures formed are shown to be identical for both cases of action. The scenario of the development of moving switching waves found in this work is an alternative to that known in the literature earlier, which developed under the action of focused Gaussian beams and was analyzed with no regard for the variations of the phase of the optical beam.
Using computer simulation, the feasibility of absorption optical bistability based on the dependence of the absorption coefficient on an electric field induced by a high-intensity laser pulse acting on a semiconductor and shifting the energy levels of atoms is demonstrated. Unlike the known mechanisms behind absorption optical bistability, here enhanced diffusion of charged particles does not change the rate of switching the system from the lower to upper state. Radiation-semiconductor interaction conditions are found when, after being switched to the upper state, the system remains in it until the laser pulse disappears.
The conditions for the realization of absorption optical bistability under the simultaneous action of two (radiative and nonradiative) mechanisms of recombination of free charge carriers are investigated. It is shown that, in the diffusion mechanism of stream of free electrons from the beam axis, the temperature dependence of radiative recombination does not expand the temperature range of the thermostat in which the optical bistability occurs. A scheme is proposed with application of an external transverse electric field, which makes it possible to realize absorption optical bistability at any ambient temperature. An important advantage of this scheme is the conservation of the state of a bistable system after the action of a light pulse and a significant decrease in the energy spent on cooling of the medium.