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Technical Physics

Absorption coefficient versus induced electric field dependence as a basis for optical bistability in a semiconductor

M.M. Loginova, Vyacheslav A. Trofimov

Published May 1, 2006• 0 citations
Publisher

Abstract

Using computer simulation, the feasibility of absorption optical bistability based on the dependence of the absorption coefficient on an electric field induced by a high-intensity laser pulse acting on a semiconductor and shifting the energy levels of atoms is demonstrated. Unlike the known mechanisms behind absorption optical bistability, here enhanced diffusion of charged particles does not change the rate of switching the system from the lower to upper state. Radiation-semiconductor interaction conditions are found when, after being switched to the upper state, the system remains in it until the laser pulse disappears.

DOI
10.1134/s1063784206050124

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Optics and Spectroscopy•Sep 1, 2006•1 citation
Using computer simulation, the feasibility of absorption optical bistability based on the dependence of the absorption coefficient on an electric field induced by a high-intensity laser pulse acting on a semiconductor and shifting the energy levels of atoms is demonstrated. Unlike the known mechanisms behind absorption optical bistability, here enhanced diffusion of charged particles does not change the rate of switching the system from the lower to upper state. Radiation-semiconductor interaction conditions are found when, after being switched to the upper state, the system remains in it until the laser pulse disappears.
Using computer simulation, we show a possibility of ultrafast switching between stable states of an optical bistable device based on nano-film of semiconductor. Optical bistability occurs because of nonlinear dependence of semiconductor absorption coefficient on electric field potential. Electric field is induced by a laser pulse due to charged particles generation. The main feature of this bistable element is low absorption energy, which is necessary for switching, in comparison with bistable element based on other physical mechanism of laser energy absorption. For computer simulation of a problem under consideration a new finite-difference scheme is proposed using the original iterative process.
Using computer simulation, we show a possibility of ultrafast switching between stable states of an optical bistable device based on nano-film of semiconductor. Optical bistability occurs because of nonlinear dependence of semiconductor absorption coefficient on electric field potential. Electric field is induced by a laser pulse due to charged particles generation. The main feature of this bistable element is low absorption energy, which is necessary for switching, in comparison with bistable element based on other physical mechanism of laser energy absorption. For computer simulation of a problem under consideration a new finite-difference scheme is proposed using the original iterative process.
An influence of electrons diffusion on the intensities of switching for absorption optical bistability based on high-intensity femtosecond laser pulse interaction with semiconductor is studied. The dependence of absorption coefficient on free electrons concentration and on induced electric field strength or its potential is considered. With the help of computer simulation an anomalous influence of electrons diffusion on intensities of switching under taking into account of free electrons mobility.
An influence of electrons diffusion on the intensities of switching for absorption optical bistability based on high-intensity femtosecond laser pulse interaction with semiconductor is studied. The dependence of absorption coefficient on free electrons concentration and on induced electric field strength or its potential is considered. With the help of computer simulation an anomalous influence of electrons diffusion on intensities of switching under taking into account of free electrons mobility.
The conditions for the realization of absorption optical bistability under the simultaneous action of two (radiative and nonradiative) mechanisms of recombination of free charge carriers are investigated. It is shown that, in the diffusion mechanism of stream of free electrons from the beam axis, the temperature dependence of radiative recombination does not expand the temperature range of the thermostat in which the optical bistability occurs. A scheme is proposed with application of an external transverse electric field, which makes it possible to realize absorption optical bistability at any ambient temperature. An important advantage of this scheme is the conservation of the state of a bistable system after the action of a light pulse and a significant decrease in the energy spent on cooling of the medium.