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Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE

Ultrafast switching based on field optical bistability in nano-film of semiconductor

Vyacheslav A. Trofimov, Vladimir A. Egorenkov, M.M. Loginova

Published Jan 1, 2016• 0 citations
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Abstract

Using computer simulation, we show a possibility of ultrafast switching between stable states of an optical bistable device based on nano-film of semiconductor. Optical bistability occurs because of nonlinear dependence of semiconductor absorption coefficient on electric field potential. Electric field is induced by a laser pulse due to charged particles generation. The main feature of this bistable element is low absorption energy, which is necessary for switching, in comparison with bistable element based on other physical mechanism of laser energy absorption. For computer simulation of a problem under consideration a new finite-difference scheme is proposed using the original iterative process.

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Ultrafast switching based on field optical bistability in nano-film of semiconductor

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Physical Review Letters•Aug 31, 1987•82 citations
Using computer simulation, we show a possibility of ultrafast switching between stable states of an optical bistable device based on nano-film of semiconductor. Optical bistability occurs because of nonlinear dependence of semiconductor absorption coefficient on electric field potential. Electric field is induced by a laser pulse due to charged particles generation. The main feature of this bistable element is low absorption energy, which is necessary for switching, in comparison with bistable element based on other physical mechanism of laser energy absorption. For computer simulation of a problem under consideration a new finite-difference scheme is proposed using the original iterative process.
Using computer simulation, we show a possibility of ultrafast switching between stable states of an optical bistable device based on nano-film of semiconductor. Optical bistability occurs because of nonlinear dependence of semiconductor absorption coefficient on electric field potential. Electric field is induced by a laser pulse due to charged particles generation. The main feature of this bistable element is low absorption energy, which is necessary for switching, in comparison with bistable element based on other physical mechanism of laser energy absorption. For computer simulation of a problem under consideration a new finite-difference scheme is proposed using the original iterative process.
Using computer simulation, the feasibility of absorption optical bistability based on the dependence of the absorption coefficient on an electric field induced by a high-intensity laser pulse acting on a semiconductor and shifting the energy levels of atoms is demonstrated. Unlike the known mechanisms behind absorption optical bistability, here enhanced diffusion of charged particles does not change the rate of switching the system from the lower to upper state. Radiation-semiconductor interaction conditions are found when, after being switched to the upper state, the system remains in it until the laser pulse disappears.
An influence of electrons diffusion on the intensities of switching for absorption optical bistability based on high-intensity femtosecond laser pulse interaction with semiconductor is studied. The dependence of absorption coefficient on free electrons concentration and on induced electric field strength or its potential is considered. With the help of computer simulation an anomalous influence of electrons diffusion on intensities of switching under taking into account of free electrons mobility.
An influence of electrons diffusion on the intensities of switching for absorption optical bistability based on high-intensity femtosecond laser pulse interaction with semiconductor is studied. The dependence of absorption coefficient on free electrons concentration and on induced electric field strength or its potential is considered. With the help of computer simulation an anomalous influence of electrons diffusion on intensities of switching under taking into account of free electrons mobility.
A new concept on optical nonlinearity due to virtual transitions in quantum well structure with electric field, named virtual charge-induced optical nonlinearity, is proposed, with a showing of some examples of theoretical result on the nonlinearity. The switching time of the nonlinearity is expected to be extremely short, 100 fs. The nonlinearity seems to be observable and quite useful for the design of an ultrafast optical gate. A possibility of optical bistability without external optical feedback, based on the proposed nonlinearity, is pointed out.