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Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE

Anomalous influence of electrons diffusion on absorption optical bistability realization

Vyacheslav A. Trofimov, M.M. Loginova

Published Sep 16, 2005• 4 citations
Publisher

Abstract

An influence of electrons diffusion on the intensities of switching for absorption optical bistability based on high-intensity femtosecond laser pulse interaction with semiconductor is studied. The dependence of absorption coefficient on free electrons concentration and on induced electric field strength or its potential is considered. With the help of computer simulation an anomalous influence of electrons diffusion on intensities of switching under taking into account of free electrons mobility.

DOI
10.1117/12.622445

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An influence of electrons diffusion on the intensities of switching for absorption optical bistability based on high-intensity femtosecond laser pulse interaction with semiconductor is studied. The dependence of absorption coefficient on free electrons concentration and on induced electric field strength or its potential is considered. With the help of computer simulation an anomalous influence of electrons diffusion on intensities of switching under taking into account of free electrons mobility.
An influence of electrons diffusion on the intensities of switching for absorption optical bistability based on high-intensity femtosecond laser pulse interaction with semiconductor is studied. The dependence of absorption coefficient on free electrons concentration and on induced electric field strength or its potential is considered. With the help of computer simulation an anomalous influence of electrons diffusion on intensities of switching under taking into account of free electrons mobility.
Using computer simulation, the feasibility of absorption optical bistability based on the dependence of the absorption coefficient on an electric field induced by a high-intensity laser pulse acting on a semiconductor and shifting the energy levels of atoms is demonstrated. Unlike the known mechanisms behind absorption optical bistability, here enhanced diffusion of charged particles does not change the rate of switching the system from the lower to upper state. Radiation-semiconductor interaction conditions are found when, after being switched to the upper state, the system remains in it until the laser pulse disappears.
Using computer simulation, we show a possibility of ultrafast switching between stable states of an optical bistable device based on nano-film of semiconductor. Optical bistability occurs because of nonlinear dependence of semiconductor absorption coefficient on electric field potential. Electric field is induced by a laser pulse due to charged particles generation. The main feature of this bistable element is low absorption energy, which is necessary for switching, in comparison with bistable element based on other physical mechanism of laser energy absorption. For computer simulation of a problem under consideration a new finite-difference scheme is proposed using the original iterative process.
Using computer simulation, we show a possibility of ultrafast switching between stable states of an optical bistable device based on nano-film of semiconductor. Optical bistability occurs because of nonlinear dependence of semiconductor absorption coefficient on electric field potential. Electric field is induced by a laser pulse due to charged particles generation. The main feature of this bistable element is low absorption energy, which is necessary for switching, in comparison with bistable element based on other physical mechanism of laser energy absorption. For computer simulation of a problem under consideration a new finite-difference scheme is proposed using the original iterative process.
Problems of stability of bistable states in aspect of information storage are considered. Influence of temperature dependencies of absorption coefficient and relaxation time of free electrons onto realization of bistability and possibility of self-switching were investigated in context of a point-wise model. As a result various regimes of interaction of light pulse with the semiconductor were revealed due to the numerical simulation and parametrical analysis. Principal possibility of instability of both bistable states, which promote development of self- switching, was first shown in the model.