Journal of Huangshi Institute of Technology
Simulation and Experiment on Gate-mode Single Photon Detector of Quantum Key Distribution
Tao Biao
Abstract
According to the requirements and the characteristics of the InGaAsP/InP avalanche photodiode for single photon detection at infrared wavelengths,the relation between the various gate-mode parameters had been analyzed by the mathematics model and simulation,which provided a reference for the selection of the gate-mode parameters.The result proved that the choice of the bias voltage,the width and the period of the gated pulse was very important to improve the performance of the detector.Based on the simulation,a relatively complete single-photon detector circuit was presented,which can produce the TTL signal for each detected photon.