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Acta Optica Sinica

Photon-gated spectral hole burning in BaSO_4:Sm~(2+)

S Chen

Published Jan 1, 1992• 0 citations
OpenAlex

Abstract

A new Inorganic material of photon-gated spectral hole burning, crystal is reported for the first time. Using the -624nm output from a CW dye laser and a 514.5 nm output of Ar+ laser (the gating light), we observed the persis-tant hole burning, which involves two-step photoionization of Sm+ in the 7F0-5D1 inhomogeneaus brodened absorption line at 6K. The experimentalts results of relevant spectral properties are given.

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We have observed photon-gated spectral hole burning, i.e., hole burning that occurs only in the presence of an additional gating-light source. Gating enhancement factors of 10(4) were observed. In BaClF:Sm(2+) this involves two step photoionization of Sm(2+) and leads to persistent holes in the (4)F(0) --> (5)D(0) (687.9-nm) and (7)F(0) --> (5)D(1) (629.7-nm) absorption lines. The hole widths of 25 MHz at 2 K are much narrower than the inhomogeneous broadening of 16 GHz. The action spectrum of the gating shows a threshold behavior around 2.5 eV. Erasing studies show that Sm(3)+ acts as a trap for the released electrons. A remarkable and novel feature is that the holes can be recovered after temperature cycling to 300 K.

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Investigations of photon- gated spectral hole burning and its mechanism for the inorganic material BaFCl0.5Br0.5 : Sm2+ are presented. Multiple holes burning, hole erasing and repeatable hole burning were realized. Gating ratio and hole stability were also measured. The experimental results indicated that more than 1 × 103 persistent spectral holes within an inhomogeneously broadened absorption band of BaFCl0. 5Br0.5 : Sm2+ at low temperature of 4 K could be burned.

Acta Optica Sinica•Jan 1, 1993•0 citations

PHOTON GATED HOLE BURNING IN THE7F0?5D2ABSORPTION OF BaCIF : Sm2+

J. C. Vial, R. M. Macfarlane

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Le Journal de Physique Colloques•Dec 1, 1987•1 citation

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We report the observation of photon-gated spectral holeburning in which persistent holes are burned in an inhomogeneoulsy broadened absorption line only in the presence of a second gating light source. The measurements were made in BaClF : Sm2+ and involve 2-step photoionization of Sm2+. A remarkable and novel feature of this System is that holes can be recovered after temperature cycling to 300 K for several days.

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Europhysics Letters (EPL)•Oct 7, 1991•173 citations

Photon-gated spectral hole burning in LiGa 5 O 8 :Co 2+

R. M. Macfarlane, J. C. Vial

Photon-gated hole burning, or selective bleaching enabled by a second light source, has been observed in ${\mathrm{Co}}^{2+}$ in tetrahedral sites of ${\mathrm{LiGa}}_{5}$${\mathrm{O}}_{8}$. This leads to long-lived spectral holes with a width of \ensuremath{\sim}1 GHz at 1.6 K. It is proposed that two-step photoionization of ${\mathrm{Co}}^{2+}$ is responsible for the hole burning. Much narrower (\ensuremath{\sim}40 MHz) transient holes and antiholes were burned using population storage in nuclear hyperfine levels. These two mechanisms of hole burning are reported here for transition-metal ions for what is believed to be the first time.

•Jun 9, 1986•0 citations
A new Inorganic material of photon-gated spectral hole burning, crystal is reported for the first time. Using the -624nm output from a CW dye laser and a 514.5 nm output of Ar+ laser (the gating light), we observed the persis-tant hole burning, which involves two-step photoionization of Sm+ in the 7F0-5D1 inhomogeneaus brodened absorption line at 6K. The experimentalts results of relevant spectral properties are given.
We have observed photon-gated spectral hole burning, i.e., hole burning that occurs only in the presence of an additional gating-light source. Gating enhancement factors of 10(4) were observed. In BaClF:Sm(2+) this involves two step photoionization of Sm(2+) and leads to persistent holes in the (4)F(0) --> (5)D(0) (687.9-nm) and (7)F(0) --> (5)D(1) (629.7-nm) absorption lines. The hole widths of 25 MHz at 2 K are much narrower than the inhomogeneous broadening of 16 GHz. The action spectrum of the gating shows a threshold behavior around 2.5 eV. Erasing studies show that Sm(3)+ acts as a trap for the released electrons. A remarkable and novel feature is that the holes can be recovered after temperature cycling to 300 K.
Spectral hole burning in solids is a selective bleaching of a small portion of an inhomogeneously broadened optical transition by a laser. In the photon gated holeburning process spectral holes are burned in two steps. The first is provided by a narrow band laser resonant with the inhomogeneously broadened transition and the second (gating) can be initiated by a broad band light source. Photon gated spectral hole burning was reported recently in 7F0→5D0 and 7F0→5D1 absorption lines of Sm2+ in BaClF(1). In this poster we report on the spectral holeburning behaviour of 1F0→5D2 transition. We found that even in absence of additional light source for gating, permanent holes can be burned. This self gating behaviour is consistent with the observation that the optimum frequency following 5D0 excitation is ≈ 22 000cm-1 so that two photons of energy 5D2 - 7F0 are sufficient to produce photoionisation. We have analysed the light intensity dependance of hole area and a simple model indicate that the electron transfer following the photoionisation is strongly dependant on the ion - electron trap distance.
Two-photon persistent hole burning is observed at T = 296 K in 5 D 1 – 7 F 0 and 5 D 0 – 7 F 0 transitions of Sm 2+ ions in substitutionally disordered SrFCl 1/2 single crystals, showing the ratio of inhomogeneous to homogeneous linewidth of 20 ÷ 25. The minimum hole widths of 3.5 cm -1 and 2.6 cm -1 , respectively, were determined for these transitions. In fact, the applicability of persistent spectral hole burning, known as a low-temperature high-resolution spectroscopic method and a potential basis for the use of a new–spectral–dimension in optical data storage and processing, is demonstrated for the first time at room temperature in inorganic materials.
Photon-gated hole burning, or selective bleaching enabled by a second light source, has been observed in Co2+{\mathrm{Co}}^{2+}Co2+ in tetrahedral sites of LiGa5{\mathrm{LiGa}}_{5}LiGa5​O8{\mathrm{O}}_{8}O8​. This leads to long-lived spectral holes with a width of \ensuremath{\sim}1 GHz at 1.6 K. It is proposed that two-step photoionization of Co2+{\mathrm{Co}}^{2+}Co2+ is responsible for the hole burning. Much narrower (\ensuremath{\sim}40 MHz) transient holes and antiholes were burned using population storage in nuclear hyperfine levels. These two mechanisms of hole burning are reported here for transition-metal ions for what is believed to be the first time.