Photon-gated spectral hole burning in LiGa 5 O 8 :Co 2+

We observed photon-gated spectral hole burning in Pr:YAG and assigned the hole-burning mechanism to selective photoionization of trivalent praseodymium. Gated holes were observed in absorption lines to the two lowest components of the (1)D(2) manifold. At 1.4 K the gating ratio is in excess of 1.5 x 10(4). Strong competition from the transient mechanism of optical pumping of hyperfine levels occurs below 6 K.

Optics LettersAug 15, 199615 citations

Off-resonant spectral hole burning in CaS:Eu by time-varying Coulomb fields

S. A. Basun, Madis Raukas, Uwe Happek +5 more

Physical review. B, Condensed matterNov 15, 199721 citations

Photon-gated spectral hole burning in LiGa 5 O 8 :Co 2+

R. M. Macfarlane, J. C. Vial

Published Jun 9, 1986• 0 citations

OpenAlex

Abstract

Photon-gated hole burning, or selective bleaching enabled by a second light source, has been observed in

{\mathrm{Co}}^{2+}

in tetrahedral sites of

{\mathrm{LiGa}}_{5}$${\mathrm{O}}_{8}

. This leads to long-lived spectral holes with a width of \ensuremath{\sim}1 GHz at 1.6 K. It is proposed that two-step photoionization of

{\mathrm{Co}}^{2+}

is responsible for the hole burning. Much narrower (\ensuremath{\sim}40 MHz) transient holes and antiholes were burned using population storage in nuclear hyperfine levels. These two mechanisms of hole burning are reported here for transition-metal ions for what is believed to be the first time.

Related papers

Photon-gated spectral hole burning in LiGa5 O8 : Co2+

R. M. Macfarlane, J. C. Vial

Photon-gated hole burning, or selective bleaching enabled by a second light source, has been observed in ${\mathrm{Co}}^{2+}$ in tetrahedral sites of ${\mathrm{LiGa}}_{5}$ ${\mathrm{O}}_{8}$ . This leads to long-lived spectral holes with a width of \ensuremath{\sim}1 GHz at 1.6 K. It is proposed that two-step photoionization of ${\mathrm{Co}}^{2+}$ is responsible for the hole burning. Much narrower (\ensuremath{\sim}40 MHz) transient holes and antiholes were burned using population storage in nuclear hyperfine levels. These two mechanisms of hole burning are reported here for transition-metal ions for what is believed to be the first time.Photon-gated hole burning, or selective bleaching enabled by a second light source, has been observed in ${\mathrm{Co}}^{2+}$ in tetrahedral sites of ${\mathrm{LiGa}}_{5}$${\mathrm{O}}_{8}$. This leads to long-lived spectral holes with a width of \ensuremath{\sim}1 GHz at 1.6 K. It is proposed that two-step photoionization of ${\mathrm{Co}}^{2+}$ is responsible for the hole burning. Much narrower (\ensuremath{\sim}40 MHz) transient holes and antiholes were burned using population storage in nuclear hyperfine levels. These two mechanisms of hole burning are reported here for transition-metal ions for what is believed to be the first time.

Physical review. B, Condensed matterJul 1, 198647 citations

Photon-gated hole burning: a new mechanism using two-step photoionization

Albrecht Winnacker, Robert M. Shelby, R. M. Macfarlane

We have observed photon-gated spectral hole burning, i.e., hole burning that occurs only in the presence of an additional gating-light source. Gating enhancement factors of 10(4) were observed. In BaClF:Sm(2+) this involves two step photoionization of Sm(2+) and leads to persistent holes in the (4)F(0) --> (5)D(0) (687.9-nm) and (7)F(0) --> (5)D(1) (629.7-nm) absorption lines. The hole widths of 25 MHz at 2 K are much narrower than the inhomogeneous broadening of 16 GHz. The action spectrum of the gating shows a threshold behavior around 2.5 eV. Erasing studies show that Sm(3)+ acts as a trap for the released electrons. A remarkable and novel feature is that the holes can be recovered after temperature cycling to 300 K.We have observed photon-gated spectral hole burning, i.e., hole burning that occurs only in the presence of an additional gating-light source. Gating enhancement factors of 10(4) were observed. In BaClF:Sm(2+) this involves two step photoionization of Sm(2+) and leads to persistent holes in the (4)F(0) --> (5)D(0) (687.9-nm) and (7)F(0) --> (5)D(1) (629.7-nm) absorption lines. The hole widths of 25 MHz at 2 K are much narrower than the inhomogeneous broadening of 16 GHz. The action spectrum of the gating shows a threshold behavior around 2.5 eV. Erasing studies show that Sm(3)+ acts as a trap for the released electrons. A remarkable and novel feature is that the holes can be recovered after temperature cycling to 300 K.

Optics LettersJul 1, 1985234 citations

PHOTON GATED HOLE BURNING IN THE7F0?5D2ABSORPTION OF BaCIF : Sm2+

J. C. Vial, R. M. Macfarlane

Spectral hole burning in solids is a selective bleaching of a small portion of an inhomogeneously broadened optical transition by a laser. In the photon gated holeburning process spectral holes are burned in two steps. The first is provided by a narrow band laser resonant with the inhomogeneously broadened transition and the second (gating) can be initiated by a broad band light source. Photon gated spectral hole burning was reported recently in 7F0→5D0 and 7F0→5D1 absorption lines of Sm2+ in BaClF(1). In this poster we report on the spectral holeburning behaviour of 1F0→5D2 transition. We found that even in absence of additional light source for gating, permanent holes can be burned. This self gating behaviour is consistent with the observation that the optimum frequency following 5D0 excitation is ≈ 22 000cm-1 so that two photons of energy 5D2 - 7F0 are sufficient to produce photoionisation. We have analysed the light intensity dependance of hole area and a simple model indicate that the electron transfer following the photoionisation is strongly dependant on the ion - electron trap distance.Spectral hole burning in solids is a selective bleaching of a small portion of an inhomogeneously broadened optical transition by a laser. In the photon gated holeburning process spectral holes are burned in two steps. The first is provided by a narrow band laser resonant with the inhomogeneously broadened transition and the second (gating) can be initiated by a broad band light source. Photon gated spectral hole burning was reported recently in 7F0→5D0 and 7F0→5D1 absorption lines of Sm2+ in BaClF(1). In this poster we report on the spectral holeburning behaviour of 1F0→5D2 transition. We found that even in absence of additional light source for gating, permanent holes can be burned. This self gating behaviour is consistent with the observation that the optimum frequency following 5D0 excitation is ≈ 22 000cm-1 so that two photons of energy 5D2 - 7F0 are sufficient to produce photoionisation. We have analysed the light intensity dependance of hole area and a simple model indicate that the electron transfer following the photoionisation is strongly dependant on the ion - electron trap distance.

Le Journal de Physique ColloquesDec 1, 19871 citation

Spectral hole burning of Eu2+ in Ca F2

D.M. Boye, R. M. Macfarlane, Yazhou Sun +1 more

Spectral hole burning on the $4{f}^{7}(^{8}S_{\frac{7}{2}})\ensuremath{\rightarrow}4{f}^{6}5d$ transition of ${\mathrm{Eu}}^{2+}$ is observed to occur by two mechanisms in Ca ${\mathrm{F}}_{2}$ : ${\mathrm{Eu}}^{2+}$ . At zero magnetic field, persistent spectral hole burning occurs by two-step photoionization where the hole burning survives cycling to room temperature. The observed hole spectrum is compared with a calculation which considers the small ${\mathrm{Eu}}^{2+}$ ground-state splitting and both the ground- and excited-state hyperfine interactions. In a magnetic field above 1 T, transient spectral hole burning occurs by population redistribution among the ground-state hyperfine levels. Long-lived (minutes) holes are observed for a half integral spin system. The resulting hole spectrum consists of holes, antiholes, and a nuclear spin-flip sideband and can be explained from the hyperfine interactions in the ground and excited states. The dominant hole decay occurs by phonon-induced transitions among hyperfine levels of the ${M}_{S}=\ensuremath{-}\frac{7}{2}$ and ${M}_{S}=\ensuremath{-}\frac{5}{2}$ electron-spin sublevels. Central hole linewidths of 200 MHz are observed at zero magnetic field. Hole linewidths at high magnetic fields are as narrow as 40 MHz but these are inhomogenously broadened by superhyperfine interactions with the $F$ nuclear spins. Estimates of hole-burning quantum efficiency are also obtained.Spectral hole burning on the $4{f}^{7}(^{8}S_{\frac{7}{2}})\ensuremath{\rightarrow}4{f}^{6}5d$ transition of ${\mathrm{Eu}}^{2+}$ is observed to occur by two mechanisms in Ca${\mathrm{F}}_{2}$:${\mathrm{Eu}}^{2+}$. At zero magnetic field, persistent spectral hole burning occurs by two-step photoionization where the hole burning survives cycling to room temperature. The observed hole spectrum is compared with a calculation which considers the small ${\mathrm{Eu}}^{2+}$ ground-state splitting and both the ground- and excited-state hyperfine interactions. In a magnetic field above 1 T, transient spectral hole burning occurs by population redistribution among the ground-state hyperfine levels. Long-lived (minutes) holes are observed for a half integral spin system. The resulting hole spectrum consists of holes, antiholes, and a nuclear spin-flip sideband and can be explained from the hyperfine interactions in the ground and excited states. The dominant hole decay occurs by phonon-induced transitions among hyperfine levels of the ${M}_{S}=\ensuremath{-}\frac{7}{2}$ and ${M}_{S}=\ensuremath{-}\frac{5}{2}$ electron-spin sublevels. Central hole linewidths of 200 MHz are observed at zero magnetic field. Hole linewidths at high magnetic fields are as narrow as 40 MHz but these are inhomogenously broadened by superhyperfine interactions with the $F$ nuclear spins. Estimates of hole-burning quantum efficiency are also obtained.

Physical review. B, Condensed matterSep 1, 199623 citations

Photon-gated spectral hole burning in Pr^3+:YAG

R. M. Macfarlane, G. Wittmann

Optics LettersAug 15, 199615 citations

Off-resonant spectral hole burning in CaS:Eu by time-varying Coulomb fields

S. A. Basun, Madis Raukas, Uwe Happek +5 more

Persistent spectral hole burning has been observed on the zero-phonon lines of the main site and several perturbed sites of ${\mathrm{Eu}}^{2+}$ in CaS:Eu single crystals. Hole burning occurs by two-step photoionization, can be strongly gated with IR irradiation, and takes place by excited-state absorption from the metastable ${4f}^{6}5d$ excited state to the conduction band followed by electron transport to ${\mathrm{Eu}}^{3+}$ centers which are the dominant traps. A complex hole structure consisting of a narrow feature (200 MHz), and broader features ($\ensuremath{\approx}5$ and $\ensuremath{\approx}100\mathrm{GHz}$) is observed. A mechanism is described for the occurrence of these unusually broad features. Time-varying internal electric fields which occur during the hole burning due to photoionization and trapping can lead to burning of holes at frequencies non-resonant with that of the laser. In addition, a mechanism for hole erasure, tunneling between Eu ions, is demonstrated. This mechanism is identified from the frequency dependence of the hole erasure which follows the ${\mathrm{Eu}}^{2+}$ absorption, and the linear dependence of the photoconductivity and hole erasure efficiency on irradiation power, both of which indicate erasure in a single-photon process.Persistent spectral hole burning has been observed on the zero-phonon lines of the main site and several perturbed sites of ${\mathrm{Eu}}^{2+}$ in CaS:Eu single crystals. Hole burning occurs by two-step photoionization, can be strongly gated with IR irradiation, and takes place by excited-state absorption from the metastable ${4f}^{6}5d$ excited state to the conduction band followed by electron transport to ${\mathrm{Eu}}^{3+}$ centers which are the dominant traps. A complex hole structure consisting of a narrow feature (200 MHz), and broader features ($\ensuremath{\approx}5$ and $\ensuremath{\approx}100\mathrm{GHz}$) is observed. A mechanism is described for the occurrence of these unusually broad features. Time-varying internal electric fields which occur during the hole burning due to photoionization and trapping can lead to burning of holes at frequencies non-resonant with that of the laser. In addition, a mechanism for hole erasure, tunneling between Eu ions, is demonstrated. This mechanism is identified from the frequency dependence of the hole erasure which follows the ${\mathrm{Eu}}^{2+}$ absorption, and the linear dependence of the photoconductivity and hole erasure efficiency on irradiation power, both of which indicate erasure in a single-photon process.

Physical review. B, Condensed matterNov 15, 199721 citations

Photon-gated hole burning, or selective bleaching enabled by a second light source, has been observed in

{\mathrm{Co}}^{2+}

in tetrahedral sites of

{\mathrm{LiGa}}_{5}$${\mathrm{O}}_{8}

. This leads to long-lived spectral holes with a width of \ensuremath{\sim}1 GHz at 1.6 K. It is proposed that two-step photoionization of

{\mathrm{Co}}^{2+}

Photon-gated hole burning, or selective bleaching enabled by a second light source, has been observed in

{\mathrm{Co}}^{2+}

in tetrahedral sites of

{\mathrm{LiGa}}_{5}

{\mathrm{O}}_{8}

. This leads to long-lived spectral holes with a width of \ensuremath{\sim}1 GHz at 1.6 K. It is proposed that two-step photoionization of

{\mathrm{Co}}^{2+}

Spectral hole burning on the $4{f}^{7}(^{8}S_{\frac{7}{2}})\ensuremath{\rightarrow}4{f}^{6}5d$ transition of

{\mathrm{Eu}}^{2+}

is observed to occur by two mechanisms in Ca

{\mathrm{F}}_{2}

{\mathrm{Eu}}^{2+}

. At zero magnetic field, persistent spectral hole burning occurs by two-step photoionization where the hole burning survives cycling to room temperature. The observed hole spectrum is compared with a calculation which considers the small

{\mathrm{Eu}}^{2+}

ground-state splitting and both the ground- and excited-state hyperfine interactions. In a magnetic field above 1 T, transient spectral hole burning occurs by population redistribution among the ground-state hyperfine levels. Long-lived (minutes) holes are observed for a half integral spin system. The resulting hole spectrum consists of holes, antiholes, and a nuclear spin-flip sideband and can be explained from the hyperfine interactions in the ground and excited states. The dominant hole decay occurs by phonon-induced transitions among hyperfine levels of the ${M}_{S}=\ensuremath{-}\frac{7}{2}$ and ${M}_{S}=\ensuremath{-}\frac{5}{2}$ electron-spin sublevels. Central hole linewidths of 200 MHz are observed at zero magnetic field. Hole linewidths at high magnetic fields are as narrow as 40 MHz but these are inhomogenously broadened by superhyperfine interactions with the

F

nuclear spins. Estimates of hole-burning quantum efficiency are also obtained.

Persistent spectral hole burning has been observed on the zero-phonon lines of the main site and several perturbed sites of

{\mathrm{Eu}}^{2+}

in CaS:Eu single crystals. Hole burning occurs by two-step photoionization, can be strongly gated with IR irradiation, and takes place by excited-state absorption from the metastable

{4f}^{6}5d

excited state to the conduction band followed by electron transport to

{\mathrm{Eu}}^{3+}

centers which are the dominant traps. A complex hole structure consisting of a narrow feature (200 MHz), and broader features ($\ensuremath{\approx}5$ and $\ensuremath{\approx}100\mathrm{GHz}$) is observed. A mechanism is described for the occurrence of these unusually broad features. Time-varying internal electric fields which occur during the hole burning due to photoionization and trapping can lead to burning of holes at frequencies non-resonant with that of the laser. In addition, a mechanism for hole erasure, tunneling between Eu ions, is demonstrated. This mechanism is identified from the frequency dependence of the hole erasure which follows the

{\mathrm{Eu}}^{2+}

absorption, and the linear dependence of the photoconductivity and hole erasure efficiency on irradiation power, both of which indicate erasure in a single-photon process.