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Diwen wuli xuebao

FABRICATIONS OF INTRINSIC JOSEPHSON JUNCTIONS ON ULTRA THIN SINGLE CRYSTALS

Shi Yan

Published Jan 1, 2004• 0 citations
OpenAlex

Abstract

In order to increase the coupling between intrinsic Josephson junctions and high-frequency signal sources, we have successfully fabricated ultra thin single crystals, whose thicknesses are less than London penetration depth (~150nm). Then on these ultra thin single crystals, we fabricated the intrinsic Josephson junctions using the conventional fabrication process. These junctions perform stable electrical characteristics, which is nearly the same with those of conventional ones.

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IEEE Transactions on Magnetics•Mar 1, 1991•25 citations
In order to increase the coupling between intrinsic Josephson junctions and high-frequency signal sources, we have successfully fabricated ultra thin single crystals, whose thicknesses are less than London penetration depth (~150nm). Then on these ultra thin single crystals, we fabricated the intrinsic Josephson junctions using the conventional fabrication process. These junctions perform stable electrical characteristics, which is nearly the same with those of conventional ones.
Intrinsic Josephson junctions (IJJs) in the high-Tc cuprate superconductors have several fascinating properties, which are superior to the usual Josephson junctions obtained from conventional superconductors with low Tc, as follows; (1) a very thin thickness of the superconducting layers, (2) a strong interaction between junctions since neighboring junctions are closely connected in an atomic scale, (3) a clean interface between the superconducting and insulating layers, realized in a single crystal with few disorders. These unique properties of IJJs can enlarge the applicable areas of the superconducting qubits, not only the increase of qubit-operation temperature but the novel application of qubits including the macroscopic quantum states with internal degree of freedom. I present a comprehensive review of the phase dynamics in current-biased IJJs and argue the challenges of superconducting qubits utilizing IJJs.
Using a newly developed double-side fabrication method, an IJJ stack plus a bow-tie antenna and chokes were integrated in a slice 200 nm thick and singled out from inside a bulk Bi2Sr2CaCu2O8+x (BSCCO) single crystal. The junctions in the fabricated stack were very uniform, and the number of junctions involved was rather controllable. In addition to this method, which can be used to fabricate integrated circuits based on intrinsic Josephson junctions in high temperature (Tc) superconductors, also reported will be terahertz responses of IJJs, and the possible applications in quantum voltage standard, spectroscopy, and so on.
Intrinsic Josephson junction (IJJ) stacks of cuprate superconductors have potential to be implemented as intrinsic phase qubits working at relatively high temperatures. We report success in fabricating submicron La2−xSrxCuO4 (LSCO) IJJ stacks carved out of single crystals. We also show a new fabrication method in which argon ion etching is performed after focused ion beam etching. As a result, we obtained an LSCO IJJ stack in which resistive multibranches appeared. It may be possible to control the number of stacked IJJs with an accuracy of a single IJJ by developing this method.
Intrinsic Josephson junction (IJJ) stacks of cuprate superconductors have potential to be implemented as intrinsic phase qubits working at relatively high temperatures. We report success in fabricating submicron La2−x_{2-x}2−x​Srx_{x}x​CuO4_{4}4​ (LSCO) IJJ stacks carved out of single crystals. We also show a new fabrication method in which argon ion etching is performed after focused ion beam etching. As a result, we obtained an LSCO IJJ stack in which resistive multi-branches appeared. It may be possible to control the number of stacked IJJs with an accuracy of a single IJJ by developing this method.
Abstract We report the electrical transport of thin vertically-stacked Josephson tunnel junctions. The devices were fabricated using 16 nm thick GdBa 2 Cu 3 O 7− δ electrodes and 1–4 nm SrTiO 3 as an insulating barrier. The results show Josephson coupling for junctions with SrTiO 3 barriers of 1 and 2 nm. Subtracting the residual current in the Fraunhofer patterns, energies of 3.1 mV and 5.7 mV at 12 K are obtained for STO barriers of 1 nm and 2 nm, respectively. The residual current may be related to the contribution of pinholes and thickness fluctuations in the STO barrier. These values are promising for reducing the influence of thermal noise and increasing the frequency operation rate in superconducting devices using high-temperature superconductors.
All-NbN Josephson tunnel junctions with sputter-deposited magnesium oxide barriers have been fabricated using single-crystal NbN films for the base electrodes. Fabricated Josephson junctions have shown good tunneling characteristics with large gap voltages (5.6-5.8 mV), narrow gap widths (0.1-0.2 mV, from 30 to 70%), and small subgap leakage currents (V/sub m/=20-30 mV, measured at 3 mV). The results of a measurement of a subgap structure for a fabricated junction suggest that the excess leakage currents of fabricated junctions are due to multiparticle tunneling through locally thin areas in the MgO barriers.