Abstract We report the electrical transport of thin vertically-stacked Josephson tunnel junctions. The devices were fabricated using 16 nm thick GdBa 2 Cu 3 O 7− δ electrodes and 1–4 nm SrTiO 3 as an insulating barrier. The results show Josephson coupling for junctions with SrTiO 3 barriers of 1 and 2 nm. Subtracting the residual current in the Fraunhofer patterns, energies of 3.1 mV and 5.7 mV at 12 K are obtained for STO barriers of 1 nm and 2 nm, respectively. The residual current may be related to the contribution of pinholes and thickness fluctuations in the STO barrier. These values are promising for reducing the influence of thermal noise and increasing the frequency operation rate in superconducting devices using high-temperature superconductors.
Abstract We report the electrical transport of thin vertically-stacked Josephson tunnel junctions. The devices were fabricated using 16 nm thick GdBa 2 Cu 3 O 7− δ electrodes and 1–4 nm SrTiO 3 as an insulating barrier. The results show Josephson coupling for junctions with SrTiO 3 barriers of 1 and 2 nm. Subtracting the residual current in the Fraunhofer patterns, energies of 3.1 mV and 5.7 mV at 12 K are obtained for STO barriers of 1 nm and 2 nm, respectively. The residual current may be related to the contribution of pinholes and thickness fluctuations in the STO barrier. These values are promising for reducing the influence of thermal noise and increasing the frequency operation rate in superconducting devices using high-temperature superconductors.
Abstract Decoherence in quantum bits (qubits) is a major challenge for realizing scalable quantum computing. One of the primary causes of decoherence in qubits and quantum circuits based on superconducting Josephson junctions is the critical current fluctuation. Many efforts have been devoted to suppressing the critical current fluctuation in Josephson junctions. Nonetheless, the efforts have been hindered by the defect-induced trapping states in oxide-based tunnel barriers and the interfaces with superconductors in the traditional Josephson junctions. Motivated by this, along with the recent demonstration of 2D insulator h -BN with exceptional crystallinity and low defect density, we fabricated a vertical NbSe 2 / h -BN/Nb Josephson junction consisting of a bottom NbSe 2 superconductor thin layer and a top Nb superconductor spaced by an atomically thin h -BN layer. We further characterized the superconducting current and voltage ( I – V ) relationships and Fraunhofer pattern of the NbSe 2 / h -BN/Nb junction. Notably, we demonstrated the critical current noise (1/ f noise power) in the h -BN-based Josephson device is at least a factor of four lower than that of the previously studied aluminum oxide-based Josephson junctions. Our work offers a strong promise of h -BN as a novel tunnel barrier for high-quality Josephson junctions and qubit applications.
We demonstrate a double barrier long Josephson tunnel junction device of overlap geometry with an external electric contact to the middle electrode. The junctions were fabricated with a standard Nb/Al-AlO/sub x//Nb process. To exhibit fluxon coupling effects in stacked junctions, the intermediate Nb layer thickness between two barriers has to be of the order of the London penetration depth, i.e. 90 nm for sputtered Nb films. By using a planarization process, we were able to avoid steep steps on the wafer and so to reduce the intermediate layer thickness to 90 nm. Double-junction stacks with areas from 10/spl times/10 /spl mu/m/sup 2/ to 20/spl times/600 /spl mu/m/sup 2/ were fabricated. In the best stacks, the difference in the critical currents of two junctions was less than 3%. Clear voltage locking effects were observed in current-voltage (I-V) characteristics.>
Abstract The integration of ferroelectric barriers into high temperature Josephson junctions offers a pathway to tunable superconducting quantum devices. Here, we demonstrate robust Josephson coupling in YBa₂Cu₃O₇₋ₓ (YBCO) | Bi₀.₅Na₀.₅TiO₃ (BNT) | YBCO trilayer junctions incorporating a relatively thick (40 nm) ferroelectric BNT barrier. Epitaxial trilayers were fabricated using pulsed laser deposition on SrTiO₃ substrates and systematically investigated under broadband terahertz (THz) irradiation in the range of 0.5 to 2.5 THz. At 1.5 THz, which is close to the Josephson plasma resonance, the BNT polarization increased significantly, from 33.4 to 46.4 µC/cm² at 30 K, leading to enhanced superconducting transport. The junctions exhibited a well-defined zero voltage supercurrent branch, with critical current Ic(T) remaining nearly constant up to 60 K and reaching a peak value of 468.2 µA under 1.5 THz excitation, evidencing strong phase coherence. Scanning tunneling spectroscopy revealed enhanced superconducting gaps in YBCO|BNT|YBCO (Δ = 1.3 meV) compared to pure YBCO (Δ = 1.05 meV), while optical conductivity measurements showed a systematic reduction in conductivity and gap with increasing temperature, consistent with BCS theory under THz excitation. To exclude defect mediated transport, atomic force microscopy and X ray reflectivity confirmed uniform morphology and sharp interfaces. Magnetic field modulation of Ic(B) exhibited a canonical Fraunhofer interference pattern, and resistance mapping revealed alternating lobes of high and low dissipation, both of which are strong indicators of coherent Josephson tunneling. These results establish that Josephson coupling is intrinsic to the YBCO|BNT|YBCO junctions, enabled by the dipolar character and dynamic THz response of the BNT barrier. This study positions BNT as a viable and tunable barrier material for next generation superconducting quantum devices based on high-Tc materials.
The integration of ferroelectric barriers into high-temperature Josephson junctions offers a pathway to tunable superconducting quantum devices. Here, we demonstrate robust Josephson coupling in YBa2Cu3O7-x (YBCO)/Bi0.5Na0.5TiO3 (BNT)/YBCO trilayer junctions incorporating a 40 nm ferroelectric BNT barrier. Epitaxial trilayers were fabricated by pulsed laser deposition on SrTiO3 substrates and investigated under broadband terahertz (THz) irradiation (0.5-2.5 THz). At 1.5 THz, close to the Josephson plasma resonance, the BNT polarization increased from 33.4 to 46.4 uC/cm2 at 30 K, enhancing superconducting transport. The junctions exhibited a well-defined zero-voltage supercurrent branch, with the critical current Ic(T) remaining nearly constant up to 60 K and reaching 468.2 uA under 1.5 THz excitation, evidencing strong phase coherence. Scanning tunneling spectroscopy revealed an enhanced superconducting gap in YBCO/BNT/YBCO (Delta = 1.3 meV) compared with pure YBCO (Delta = 1.05 meV), while optical conductivity measurements showed a reduction in conductivity and gap with increasing temperature, consistent with BCS theory under THz excitation. Atomic force microscopy and X-ray reflectivity confirmed uniform morphology and sharp interfaces, excluding defect-mediated transport. Magnetic field modulation of Ic(B) exhibited a canonical Fraunhofer interference pattern, and resistance mapping revealed alternating lobes of high and low dissipation, indicating coherent Josephson tunneling. These results establish that Josephson coupling is intrinsic to the YBCO/BNT/YBCO junctions, enabled by the dipolar character and dynamic THz response of the BNT barrier. This study identifies BNT as a viable, tunable barrier material for next-generation high-Tc superconducting quantum devices.
We present a systematic study of the temperature-dependent transport properties of Nb- and Al-based superconductor--insulator--thin superconductor--ferromagnet--superconductor (SIsFS) Josephson junctions. By varying the superconducting material and the thickness of the intermediate superconducting layer, we identify three distinct transport regimes: a tunnel-dominated SIS-like regime, a temperature-driven crossover, and a complex weak-link regime. A unified Usadel-based description connects these regimes through the self-consistent pair potential of the intermediate s-layer. While for Al-based devices an SIS-like transport regime is observed, a self-consistent calculation of the s/F/S proximity electrode, combined with perturbative tunnel coupling to the outer electrode, accounts for Nb devices with different thickness of the superconducting interlayer. The calculation places the 10-nm-interlayer sample in a proximity-supported, strongly suppressed s state, close to the SInFS limit in which the interlayer is effectively driven normal (\textit{n}). A reduced nonlinear long-junction description captures the same limiting physics. The evolution of I_cR_N(T) thereby provides a direct experimental signature of the three transport regimes. Beyond the fundamental interest, the results establish practical design guidelines: Nb junctions with sufficiently thick s interlayers are well suited for high-speed cryogenic memory elements and tunable superconducting parametric amplifiers, while Al junctions are natural candidates for coherent superconducting quantum circuits
Optimization of the performance of Nb-based overdamped Josephson junctions for applications to superconducting electronics is a major issue today. The use of cryocoolers, thus avoiding liquid helium refrigeration, with junctions working at temperatures higher than 4.2 K, could greatly increase the use of these devices in applications such as fundamental metrology and measurement sensors. The question we address here is how to maximize the characteristic voltage and minimize the temperature influence on the current-voltage curves of overdamped junctions enabling their use at T > 4.2K. To optimize the properties of a single Josephson heterostructure, we propose a type of overdamped junction that consists of a relatively thin insulating layer and a thick (tens of nm) normal-metal film between two superconducting electrodes. Measurements of the dependence of the critical current and characteristic voltage as function of temperature for dierent electrodes configurations show how it is possible to improve the design of these junctions.