By measuring the current–voltage characteristics and the switching current distributions as a function of temperature, we have investigated the phase dynamics of Al tunnel ferromagnetic Josephson junctions (JJs), designed to fall in the typical range of parameters of state-of-the-art transmons, providing evidence of phase diffusion processes. The comparison with the experimental outcomes on non-magnetic JJs with nominally the same electrodynamical parameters demonstrates that the introduction of ferromagnetic barriers does not cause any sizeable detrimental effect and supports the notion of including tunnel ferromagnetic JJs in qubit architectures.
Epitaxial NbN/AlN/NbN Josephson junctions are promising alternatives to conventional Al/AlO
x/Al junctions for superconducting qubits due to their crystalline tunnel barriers and the high transition temperature of NbN. However, their integration into quantum circuits typically requires complex fabrication processes involving amorphous interlayer dielectrics, which can degrade qubit coherence times. To address these issues, we developed sidewall spacer passivated epitaxial NbN/AlN/NbN junctions using a fabrication process that reduces both the volume of amorphous dielectric material and fabrication complexity. The fabricated junctions exhibited a large gap voltage of approximately 5.6 mV and low subgap leakage currents. By varying the thickness of the AlN tunnel barrier, high-quality junctions were fabricated over a wide range of critical current densities
Jc, from 0.3 to 10
4 A/cm
2. In addition, the comparison of the current-voltage characteristics before and after buffered hydrofluoric acid treatment indicated that the wet etching process did not degrade the electrical characteristics of the junctions. These results establish a scalable fabrication process for epitaxial Josephson junctions and provide a promising platform for high-coherence nitride-based superconducting qubits.
Fabrication And Characterization Of High-Quality Nb/Al-AlO
x/Nb Cross-Type Josephson Tunnel Junctions Utilising CMP-based Planarisation Techniques
Josephson tunnel junctions (JJs) are the fundamental building blocks of today's most advanced superconducting electronic components, such as qubits and superconducting quantum interference devices (SQUIDs). Given the ongoing demand for scalability of these devices on the wafer-scale, it is crucial to control the fabrication process as precisely as possible to ensure uniform quality and reproducibility. Today, window-type JJs are often used in the production of DC SQUIDs and while they are reliable and reproducible, they suffer from alignment inaccuracies caused by photolithography and unavoidable parasitic capacitances, thus limiting the energy sensitivity of DC SQUIDs. These problems can be circumvented by producing JJs with cross-type geometry, which allows for smaller junction areas and eliminates parasitic capacitances. Here we discuss the fabrication of Nb/Al-AlOx/Nb-based cross-type JJs, where the trilayer is embedded in sputter-deposited SiO
2 to allow for planarisation of the structures and to ensure the reliable insulation of the sidewalls of the bottom electrode. Instead of lift-off processes that require a lot of time and potentially leave unwanted wings along the edges of microstructures behind that might compromise subsequent layers, we use chemical-mechanical polishing (CMP) for the removal of excess SiO
2. This is not only much faster, but produces smooth and uniform surfaces, which in turn effectively improves the reliability of our JJ production process resulting in a high yield of over
90% on wafer-scale. In addition, we discuss the influence of fabrication details on the quality and electrical properties of our JJs with different junction areas down to
1μm×1μm distributed across the wafer and extract the junction specific quality parameters from their IV-characteristics and their Fraunhofer patterns.