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Europhysics Letters (EPL)

Arbitrary phase shift of a semiconductor quantum dot charge qubit on a short time scale

Gang Cao, Hai-Ou Li, Xiang‐Xiang Song, Guodong Yu, Bao-Bao Chen, Ming Xiao, Guo‐Ping Guo

Published Nov 1, 2015• 4 citations
Publisher

Abstract

We present an experimental technique to better control the phase of an electron charge qubit, formed by a GaAs double quantum dot. A standard non-adiabatic gate pulse is used to generate the qubit rotation around the x -axis of the Bloch sphere. To gain good control of the z -rotation (the phase) on a short time scale, a fast 130 ps tipping pulse is superimposed on the non-adiabatic pulse. The two-axis gate operation is exhibited in the composite pulse excited qubit evolution spectrum. We demonstrate that the dynamic phase can be varied continuously from 0 to by varying the amplitude of the tipping pulse. The understanding of the spectrum is validated through simulation of the von Neumann equation.

DOI
10.1209/0295-5075/112/37005

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We present an experimental technique to better control the phase of an electron charge qubit, formed by a GaAs double quantum dot. A standard non-adiabatic gate pulse is used to generate the qubit rotation around the x -axis of the Bloch sphere. To gain good control of the z -rotation (the phase) on a short time scale, a fast 130 ps tipping pulse is superimposed on the non-adiabatic pulse. The two-axis gate operation is exhibited in the composite pulse excited qubit evolution spectrum. We demonstrate that the dynamic phase can be varied continuously from 0 to by varying the amplitude of the tipping pulse. The understanding of the spectrum is validated through simulation of the von Neumann equation.
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The charge and spin degrees of freedom of an electron constitute natural bases for constructing quantum two level systems, or qubits, in semiconductor quantum dots. The quantum dot charge qubit offers a simple architecture and high-speed operation, but generally suffers from fast dephasing due to strong coupling of the environment to the electron’s charge. On the other hand, quantum dot spin qubits have demonstrated long coherence times, but their manipulation is often slower than desired for important future applications. This talk will present experimental progress of a ‘hybrid’ qubit, formed by three electrons in a Si/SiGe double quantum dot, which combines desirable characteristics (speed and coherence) in the past found separately in qubits based on either charge or spin degrees of freedom. Using resonant microwaves, we first discuss qubit operations near the ‘sweet spot’ for charge qubit operation. Along with fast ( >GHz) manipulation rates for any rotation axis on the Bloch sphere, we implement two independent tomographic characterization schemes in the charge qubit regime: traditional quantum process tomography (QPT) and gate set tomography (GST). We also present resonant qubit operations of the hybrid qubit performed on the same device, DC pulsed gate operations of which were recently demonstrated. We demonstrate three-axis control and the implementation of dynamic decoupling pulse sequences. Performing QPT on the hybrid qubit, we show that AC gating yields π rotation process fidelities higher than 93% for X-axis and 96% for Z-axis rotations, which demonstrates efficient quantum control of semiconductor qubits using resonant microwaves. We discuss a path forward for achieving fidelities better than the threshold for quantum error correction using surface codes.
Abstract Quantum dots in silicon are a promising architecture for semiconductor quantum computing due to a high degree of electric control and compatibility with existing silicon fabrication processes. Although electron charge and spin are prominent methods for encoding the qubit state, valley states in silicon can also store quantum information via valley-orbit coupling with protection against charge noise. By observing coherent oscillations between valley states in a Si/SiGe double quantum dot device tuned to the two-electron charge configuration, we measure the valley energy splitting in both quantum dots individually. We further demonstrate two-axis quantum control of the valley qubit using gated pulse sequences with X and Z rotations occurring within a fast operation time of 300 ps. This control is used to completely map out the surface of the Bloch sphere in a single phase-space plot that is subsequently used for state and process tomography.
We study quantum coherence in a semiconductor charge qubit formed from a GaAs double quantum dot containing a single electron. Voltage pulses are applied to depletion gates to drive qubit rotations and noninvasive state readout is achieved using a quantum point contact charge detector. We measure a maximum coherence time of ∼7 ns at the charge degeneracy point, where the qubit level splitting is first-order insensitive to gate voltage fluctuations. We compare measurements of the coherence time as a function of detuning with numerical simulations and predictions from a 1/f noise model.
We present a numerically-optimized multipulse framework for the quantum control of a single-electron double quantum dot qubit. Our framework defines a set of pulse sequences, necessary for the manipulation of the ideal qubit basis, that avoids errors associated with excitations outside the computational subspace. A novel control scheme manipulates the qubit adiabatically, while also retaining high speed and ability to perform a general single-qubit rotation. This basis generates spatially localized logical qubit states, making readout straightforward. We consider experimentally realistic semiconductor qubits with finite pulse rise and fall times and determine the fastest pulse sequence yielding the highest fidelity. We show that our protocol leads to improved control of a qubit. We present simulations of a double quantum dot in a semiconductor device to visualize and verify our protocol. These results can be generalized to other physical systems since they depend only on pulse rise and fall times and the energy gap between the two lowest eigenstates.
Pulse-shaping protocols for subpicosecond optically controlled quantum gates in semiconductor quantum dots are reported. Our emphasis is the development of shaping schemes for either amplitude or phase control of the pulse that are easily implemented using commercial pulse shapers and femtosecond laser systems. We illustrate the efficacy of our approach through simulations of a controlled-rotation gate in a realistic In(Ga)As quantum dot with electronic structure calculated using eight-band, strain-dependent $\mathbit{k}\ifmmode\cdot\else\textperiodcentered\fi{}\mathbit{p}$ theory. Our results show that amplitude- and phase-shaping protocols both lead to substantial improvements in fidelity when compared with transform-limited pulses with equivalent gate times. Dephasing was found to have a minimal effect on the gate fidelities due to the ultrafast time scale of the quantum operations.