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arXiv:2303.04823 · Scientific Reports

Pulse-controlled qubit in semiconductor double quantum dots

Aleksander Lasek, Hugo Vincent Lepage, Kexin Zhang, T. Ferrus, C. H. W. Barnes

Published Dec 4, 2023• 7 citations
arXivHTMLPDF

Abstract

We present a numerically-optimized multipulse framework for the quantum control of a single-electron double quantum dot qubit. Our framework defines a set of pulse sequences, necessary for the manipulation of the ideal qubit basis, that avoids errors associated with excitations outside the computational subspace. A novel control scheme manipulates the qubit adiabatically, while also retaining high speed and ability to perform a general single-qubit rotation. This basis generates spatially localized logical qubit states, making readout straightforward. We consider experimentally realistic semiconductor qubits with finite pulse rise and fall times and determine the fastest pulse sequence yielding the highest fidelity. We show that our protocol leads to improved control of a qubit. We present simulations of a double quantum dot in a semiconductor device to visualize and verify our protocol. These results can be generalized to other physical systems since they depend only on pulse rise and fall times and the energy gap between the two lowest eigenstates.

DOI
10.1038/s41598-023-47405-0

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We present a numerically-optimized multipulse framework for the quantum control of a single-electron double quantum dot qubit. Our framework defines a set of pulse sequences, necessary for the manipulation of the ideal qubit basis, that avoids errors associated with excitations outside the computational subspace. A novel control scheme manipulates the qubit adiabatically, while also retaining high speed and ability to perform a general single-qubit rotation. This basis generates spatially localized logical qubit states, making readout straightforward. We consider experimentally realistic semiconductor qubits with finite pulse rise and fall times and determine the fastest pulse sequence yielding the highest fidelity. We show that our protocol leads to improved control of a qubit. We present simulations of a double quantum dot in a semiconductor device to visualize and verify our protocol. These results can be generalized to other physical systems since they depend only on pulse rise and fall times and the energy gap between the two lowest eigenstates.
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We report on an optimal single-electron charge qubit for a solid-state double quantum dot (DQD) system and analyse its dynamics under a time-dependent linear detuning, using GPU accelerated numerical solutions to the time-dependent Schrödinger equation. The optimal qubit is found to have basis states defined as the symmetric and antisymmetric linear combinations of the lowest energy bonding and anti-bonding states of the DQD at zero bias. In contrast to charge qubits defined by the two localised ground states of the uncoupled DQD, this choice of the basis causes the resulting dynamics to have a maximal overlap with an idealised two-state model. Our optimal qubit basis states are not localised to a single quantum dot and, as such, initialising the qubit requires a particular sequence of gate pulses to take the system from an initial fiducial state of the DQD to the logical 000 or 111. We determine this sequence using pulses that incorporate the expected experimental finite rise times. We also show how to perform arbitrary single qubit operations on the Bloch sphere using spin-echo type pulsing, allowing us to obtain any qubit state with at most two single pulses. Measurement of the optimal qubits is achieved by determining the probability of finding the electron in one of the dots.
We demonstrate multipulse quantum control of a single electron charge qubit. The qubit is manipulated by applying nonadiabatic voltage pulses to a surface depletion gate and readout is achieved using a quantum point-contact charge sensor. We observe Ramsey fringes in the excited-state occupation in response to a $\ensuremath{\pi}/2$-$\ensuremath{\pi}/2$ pulse sequence and extract ${T}_{2}^{*}\ensuremath{\sim}60$ ps away from the charge degeneracy point. Simulations suggest these results may be extended to implement a charge echo by reducing the interdot tunnel coupling and pulse rise time, thereby increasing the nonadiabaticity of the pulses.
Abstract Semiconductor quantum dots are ideal candidates for quantum information applications in solid-state technology. However, advanced theoretical and experimental tools are required to coherently control, for example, the electronic charge in these systems. Here we demonstrate how quantum optimal control theory provides a powerful way to manipulate the electronic structure of coupled quantum dots with an extremely high fidelity. As alternative control fields we apply both laser pulses as well as electric gates, respectively. We focus on double and triple quantum dots containing a single electron or two electrons interacting via Coulomb repulsion. In the two-electron situation we also briefly demonstrate the challenges of timedependent density-functional theory within the adiabatic local-density approximation to produce comparable results with the numerically exact approach.
The double-quantum-dot device benefits from the advantages of both the spin and charge qubits, while offering ways to mitigate their drawbacks. Careful gate voltage modulation can grant greater spinlike or chargelike dynamics to the device, yielding long coherence times with the former and high electrical susceptibility with the latter for electrically driven spin rotations or coherent interactions with microwave photons. As this architecture is a serious contender for the realization of a versatile physical qubit, improving its control is a critical step toward building a large-scale spin-based universal quantum computer. We show that optimal control pulses generated using the gradient ascent pulse engineering algorithm can yield higher fidelity operating regime transfers than can be achieved using linear methods.
Pulse-shaping protocols for subpicosecond optically controlled quantum gates in semiconductor quantum dots are reported. Our emphasis is the development of shaping schemes for either amplitude or phase control of the pulse that are easily implemented using commercial pulse shapers and femtosecond laser systems. We illustrate the efficacy of our approach through simulations of a controlled-rotation gate in a realistic In(Ga)As quantum dot with electronic structure calculated using eight-band, strain-dependent $\mathbit{k}\ifmmode\cdot\else\textperiodcentered\fi{}\mathbit{p}$ theory. Our results show that amplitude- and phase-shaping protocols both lead to substantial improvements in fidelity when compared with transform-limited pulses with equivalent gate times. Dephasing was found to have a minimal effect on the gate fidelities due to the ultrafast time scale of the quantum operations.