arXiv:1008.3089 · Physical Review Letters
Quantum Coherence in a One-Electron Semiconductor Charge Qubit
Karl D. Petersson, J. R. Petta, Hong Lü, Arthur C. Gossard
Abstract
We study quantum coherence in a semiconductor charge qubit formed from a GaAs double quantum dot containing a single electron. Voltage pulses are applied to depletion gates to drive qubit rotations and noninvasive state readout is achieved using a quantum point contact charge detector. We measure a maximum coherence time of ∼7 ns at the charge degeneracy point, where the qubit level splitting is first-order insensitive to gate voltage fluctuations. We compare measurements of the coherence time as a function of detuning with numerical simulations and predictions from a 1/f noise model.