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IEEE Transactions on Nanotechnology

Coherent Charge Oscillation in a Semiconductor Double Quantum Dot

T. Hayashi, T. Fujisawa, Hai Du Cheong, Y. H. Jeong, Y. Hirayama

Published Jun 1, 2004• 5 citations
Publisher

Abstract

The time evolution of a pulse-excited charge qubit in a semiconductor double quantum dot is investigated. All-electrical initialization and coherent gate control of the system are achieved, and coherent charge oscillation is observed through the transport measurements. The oscillation frequency and decoherence time T/sub 2/ are estimated by fitting the transport data with a simple model. Possible decoherence mechanisms in a charge qubit system are pointed out and discussed in detail.

DOI
10.1109/tnano.2004.828551

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The time evolution of a pulse-excited charge qubit in a semiconductor double quantum dot is investigated. All-electrical initialization and coherent gate control of the system are achieved, and coherent charge oscillation is observed through the transport measurements. The oscillation frequency and decoherence time T/sub 2/ are estimated by fitting the transport data with a simple model. Possible decoherence mechanisms in a charge qubit system are pointed out and discussed in detail.
The coherent time evolution of electrons in double quantum dots (DQDs) induced by fast bias-voltage switches is studied theoretically. As it was shown experimentally, such driven DQDs are potential devices for controlled manipulation of charge qubits. By numerically solving a quantum master equation, we obtain the energy- and time-resolved electron transfer through the device that resembles the measured data. The observed oscillations are found to depend on the level offset of the two dots during the manipulation and, most surprisingly, also the initialization stage. By means of an analytical expression, obtained from a large-bias model, we can understand the prominent features of these oscillations seen in both the experimental data and the numerical results. These findings strengthen the common interpretation in terms of a coherent transfer of electrons between the dots.
Abstract. The coherent time evolution of electrons in double quantum dots induced by fast bias-voltage switches is studied theoretically. As it was shown experimentally, such driven double quantum dots are potential devices for controlled manipulation of charge qubits. By numerically solving a quantum master equation we obtain the energy- and time-resolved electron transfer through the device which resembles the measured data. The observed oscillations are found to depend on the level offset of the two dots during the manipulation and, most surprisingly, also the on initialization stage. By means of an analytical expression, obtained from a large-bias model, we can understand the prominent features of these oscillations seen in both the experimental data and the numerical results. These findings strengthen the common interpretation in terms of a coherent transfer of electrons between the dots. PACS numbers: 73.63.Kv,73.23.Hk,72.10.-d
We study the dynamics of a pulse-gated semiconductor double-quantum-dot qubit. In our experiments, the qubit coherence times are relatively long, but the visibility of the quantum oscillations is low. We show that these observations are consistent with a theory that incorporates decoherence arising from charge noise that gives rise to detuning fluctuations of the double dot. Because effects from charge noise are largest near the singlet-triplet avoided level crossing, the visibility of the oscillations is low when the singlet-triplet avoided level crossing occurs in the vicinity of the charge degeneracy point crossed during the manipulation, but there is only modest dephasing at the large detuning value at which the quantum phase accumulates. This theory agrees well with experimental data and predicts that the visibility can be increased greatly by appropriate tuning of the interdot tunneling rate.