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arXiv:1701.06971 · Physical review. B./Physical review. B

Effects of charge noise on a pulse-gated singlet-triplet S−T− qubit

Zhenyi Qi, Xian Wu, Daniel R. Ward, Jonathan R. Prance, Dohun Kim, John King Gamble, Robert Mohr, Zhan Shi, D. E. Savage, M. G. Lagally, M. A. Eriksson, Mark G. Friesen, S. N. Coppersmith, Maxim Vavilov

Published Sep 11, 2017• 11 citations
arXivHTMLPDF

Abstract

We study the dynamics of a pulse-gated semiconductor double-quantum-dot qubit. In our experiments, the qubit coherence times are relatively long, but the visibility of the quantum oscillations is low. We show that these observations are consistent with a theory that incorporates decoherence arising from charge noise that gives rise to detuning fluctuations of the double dot. Because effects from charge noise are largest near the singlet-triplet avoided level crossing, the visibility of the oscillations is low when the singlet-triplet avoided level crossing occurs in the vicinity of the charge degeneracy point crossed during the manipulation, but there is only modest dephasing at the large detuning value at which the quantum phase accumulates. This theory agrees well with experimental data and predicts that the visibility can be increased greatly by appropriate tuning of the interdot tunneling rate.

DOI
10.1103/physrevb.96.115305

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We study the dynamics of a pulse-gated semiconductor double-quantum-dot qubit. In our experiments, the qubit coherence times are relatively long, but the visibility of the quantum oscillations is low. We show that these observations are consistent with a theory that incorporates decoherence arising from charge noise that gives rise to detuning fluctuations of the double dot. Because effects from charge noise are largest near the singlet-triplet avoided level crossing, the visibility of the oscillations is low when the singlet-triplet avoided level crossing occurs in the vicinity of the charge degeneracy point crossed during the manipulation, but there is only modest dephasing at the large detuning value at which the quantum phase accumulates. This theory agrees well with experimental data and predicts that the visibility can be increased greatly by appropriate tuning of the interdot tunneling rate.
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Fast quantum oscillations of a charge qubit in a double quantum dot fabricated in a Si/SiGe heterostructure are demonstrated and characterized experimentally. The measured inhomogeneous dephasing time T2∗{T}_{2}^{*}T2∗​ ranges from 127 ps to 2.1 ns; it depends substantially on how the energy difference of the two qubit states varies with external voltages, consistent with a decoherence process that is dominated by detuning noise (charge noise that changes the asymmetry of the qubit's double-well potential). In the regime with the shortest T2∗{T}_{2}^{*}T2∗​, applying a charge-echo pulse sequence increases the measured inhomogeneous decoherence time from 127 to 760 ps, demonstrating that low-frequency noise processes are an important dephasing mechanism.
It has been recently demonstrated that a singlet-triplet spin qubit in semiconductor double quantum dots can be controlled by changing the height of the potential barrier between the two dots (barrier control), which has led to a considerable reduction of charge noises as compared to the traditional tilt control method. In this paper we show, through a molecular-orbital-theoretic calculation of double quantum dots influenced by a charged impurity, that the relative charge noise for a system under the barrier control not only is smaller than that for the tilt control, but actually decreases as a function of an increasing exchange interaction. This is understood as a combined consequence of the greatly suppressed detuning noise when the two dots are symmetrically operated, as well as an enhancement of the inter-dot hopping energy of an electron when the barrier is lowered which in turn reduces the relative charge noise at large exchange interaction values. We have also studied the response of the qubit to charged impurities at different locations, and found that the improvement of barrier control is least for impurities equidistant from the two dots due to the small detuning noise they cause, but is otherwise significant along other directions.
Landau-Zener-Stuckelberg-Majorana (LZSM) physics has been exploited to coherently manipulate two-electron spin states in a GaAs double quantum dot (DQD) at a singlet (S)-triplet (T+) anti-crossing. The anti-crossing results from the hyperfine interaction with the nuclear spins of the host material [1,2]. However, the fluctuations of the nuclear spin bath result in spin dephasing within T ∗ 2 ∼ 10− 20 ns. As a consequence, the sweep through the anti-crossing would have to be performed on a timescale comparable to T ∗ 2 to achieve LZSM oscillations with 100% visibility. Moreover, the S-T+ anti-crossing is located near the (1, 1)− (2, 0) interdot charge transition, where (nl, nr) denotes the number of electrons in the left and right quantum dot. As a result the singlet state involved in the dynamics is a superpostion of (1, 1) and (2, 0) singlet states. Here we show that it is possible to increase the oscillation visibility while keeping sweep times less than T ∗ 2 using a tailored pulse with a detuning dependent level velocity. The pulse includes a slow level velocity portion that is chosen to coincide with the passage through the S-T+ anti-crossing and two fast level velocity portions. The latter minimize the time spent in regions where spin and charge degrees of freedom are entangled, which renders the qubit susceptible to charge noise. The slow level velocity portion of the pulse results in a stronger effective coupling between the spins states, which increases the oscillations visibility [3,4]. In particular, we were able to obtain a visibility of ∼ 0.5 for LZSM oscillations. This constitutes an important step towards the implementation of a Hadamard gate.
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