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Theory on the suppression of charge noise using barrier control of a singlet-triplet qubit

Xu-Chen Yang, Xin Wang

Published Apr 26, 2017• 0 citations
OpenAlex

Abstract

It has been recently demonstrated that a singlet-triplet spin qubit in semiconductor double quantum dots can be controlled by changing the height of the potential barrier between the two dots (barrier control), which has led to a considerable reduction of charge noises as compared to the traditional tilt control method. In this paper we show, through a molecular-orbital-theoretic calculation of double quantum dots influenced by a charged impurity, that the relative charge noise for a system under the barrier control not only is smaller than that for the tilt control, but actually decreases as a function of an increasing exchange interaction. This is understood as a combined consequence of the greatly suppressed detuning noise when the two dots are symmetrically operated, as well as an enhancement of the inter-dot hopping energy of an electron when the barrier is lowered which in turn reduces the relative charge noise at large exchange interaction values. We have also studied the response of the qubit to charged impurities at different locations, and found that the improvement of barrier control is least for impurities equidistant from the two dots due to the small detuning noise they cause, but is otherwise significant along other directions.

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It has been recently demonstrated that a singlet-triplet spin qubit in semiconductor double quantum dots can be controlled by changing the height of the potential barrier between the two dots (barrier control), which has led to a considerable reduction of charge noises as compared to the traditional tilt control method. In this paper we show, through a molecular-orbital-theoretic calculation of double quantum dots influenced by a charged impurity, that the relative charge noise for a system under the barrier control not only is smaller than that for the tilt control, but actually decreases as a function of an increasing exchange interaction. This is understood as a combined consequence of the greatly suppressed detuning noise when the two dots are symmetrically operated, as well as an enhancement of the inter-dot hopping energy of an electron when the barrier is lowered which in turn reduces the relative charge noise at large exchange interaction values. We have also studied the response of the qubit to charged impurities at different locations, and found that the improvement of barrier control is least for impurities equidistant from the two dots due to the small detuning noise they cause, but is otherwise significant along other directions.
It has been recently demonstrated that a singlet-triplet spin qubit in semiconductor double quantum dots can be controlled by changing the height of the potential barrier between the two dots (``barrier control''), which has led to a considerable reduction of charge noises as compared with the traditional tilt control method. In this paper we show, through a molecular-orbital-theoretic calculation of double quantum dots influenced by a charged impurity, that the relative charge noise for a system under the barrier control not only is smaller than that for the tilt control but actually decreases as a function of an increasing exchange interaction. This is understood as a combined consequence of the greatly suppressed detuning noise when the two dots are symmetrically operated, as well as an enhancement of the interdot hopping energy of an electron when the barrier is lowered which in turn reduces the relative charge noise at large exchange interaction values. We have also studied the response of the qubit to charged impurities at different locations and found that the improvement of barrier control is least for impurities equidistant from the two dots due to the small detuning noise they cause but is otherwise significant along other directions.
Charged impurities in semiconductor quantum dots comprise one of the main obstacles to achieving scalable fabrication and manipulation of singlet-triplet spin qubits. We theoretically show that using dots that contain several electrons each can help to overcome this problem through the screening of the rough and noisy impurity potential by the excess electrons. We demonstrate how the desired screening properties turn on as the number of electrons is increased, and we characterize the properties of a double quantum dot singlet-triplet qubit for small odd numbers of electrons per dot. We show that the sensitivity of the multielectron qubit to charge noise may be an order of magnitude smaller than that of the two-electron qubit.
Decoherence due to charge noise is one of the central challenges in using spin qubits in semiconductor quantum dots as a platform for quantum information processing. Recently, it has been experimentally demonstrated in both Si and GaAs singlet-triplet qubits that the effects of charge noise can be suppressed if qubit operations are implemented using symmetric barrier control instead of the standard tilt control. Here, we investigate the key issue of whether the benefits of barrier control persist over the entire set of single-qubit gates by performing randomized benchmarking simulations. We find the surprising result that the improvement afforded by barrier control depends sensitively on the amount of spin noise: for the minimal nuclear spin noise levels present in Si, the coherence time improves by more than 2 orders of magnitude whereas in GaAs, by contrast the coherence time is essentially the same for barrier and tilt control. However, we establish that barrier control becomes beneficial if qubit operations are performed using a new family of composite pulses that reduce gate times by up to 90%. With these optimized pulses, barrier control is the best way to achieve high-fidelity quantum gates in singlet-triplet qubits.
We show that the exchange interaction of a singlet-triplet spin qubit confined in double quantum dots, when being controlled by the barrier method, is insensitive to a charged impurity lying along certain directions away from the center of the double-dot system. These directions differ from the polar axis of the double dots by the magic angle, equaling $arccos\left(1/\sqrt{3}\right)\ensuremath{\approx}54.{7}^{\ensuremath{\circ}}$, a value previously found in atomic physics and nuclear magnetic resonance. This phenomenon can be understood from an expansion of the additional Coulomb interaction created by the impurity, but also relies on the fact that the exchange interaction solely depends on the tunnel coupling in the barrier-control scheme. Our results suggest that for a scaled-up qubit array, when all pairs of double dots rotate their respective polar axes from the same reference line by the magic angle, crosstalk between qubits can be eliminated, allowing clean single-qubit operations. While our model is a rather simplified version of actual experiments, our results suggest that it is possible to minimize unwanted couplings by judiciously designing the layout of the qubits.
In the semiconductor double quantum dot singlet-triplet qubit architecture, the decoherence caused by the qubit's charge environment poses a serious obstacle towards large scale quantum computing. The effects of the charge decoherence can be mitigated by operating the qubit in the so-called sweet spot regions where it is insensitive to electrical noise. In this paper, we propose singlet-triplet qubits based on two quantum dots of different sizes. Such asymmetric double quantum dot systems allow the implementation of exchange gates with controllable exchange splitting JJJ operated in the doubly occupied charge region of the larger dot, where the qubit has high resilience to charge noise. In the larger dot, JJJ can be quenched to a value smaller than the intradot tunneling using magnetic fields, while the smaller dot and its larger splitting can be used in the projective readout of the qubit.
We theoretically consider the effects of having unintentional charged impurities in laterally coupled two-dimensional double (GaAs) quantum-dot systems, where each dot contains one or two electrons and a single charged impurity. Using molecular orbital and configuration interaction methods, we calculate the effect of the impurity on the two-electron energy spectrum of each individual dot as well as on the spectrum of the coupled-double-dot two-electron system. We find that the singlet-triplet exchange splitting between the two lowest-energy states, both for the individual dots and the coupled-dot system, depends sensitively on the location of the impurity and its coupling strength (i.e. the effective charge). A strong electron-impurity coupling breaks down the equality of the two doubly occupied singlets in the left and the right dots, leading to a mixing between different spin singlets. As a result, the maximally entangled qubit states are no longer fully obtained in the zero-magnetic-field case. Moreover, a repulsive impurity results in a triplet-singlet transition as the impurity effective charge increases or the impurity position changes. We comment on the impurity effect in spin qubit operations in the double-dot system based on our numerical results.