Abstract Quantum dots in silicon are a promising architecture for semiconductor quantum computing due to a high degree of electric control and compatibility with existing silicon fabrication processes. Although electron charge and spin are prominent methods for encoding the qubit state, valley states in silicon can also store quantum information via valley-orbit coupling with protection against charge noise. By observing coherent oscillations between valley states in a Si/SiGe double quantum dot device tuned to the two-electron charge configuration, we measure the valley energy splitting in both quantum dots individually. We further demonstrate two-axis quantum control of the valley qubit using gated pulse sequences with X and Z rotations occurring within a fast operation time of 300 ps. This control is used to completely map out the surface of the Bloch sphere in a single phase-space plot that is subsequently used for state and process tomography.
Abstract Quantum dots in silicon are a promising architecture for semiconductor quantum computing due to a high degree of electric control and compatibility with existing silicon fabrication processes. Although electron charge and spin are prominent methods for encoding the qubit state, valley states in silicon can also store quantum information via valley-orbit coupling with protection against charge noise. By observing coherent oscillations between valley states in a Si/SiGe double quantum dot device tuned to the two-electron charge configuration, we measure the valley energy splitting in both quantum dots individually. We further demonstrate two-axis quantum control of the valley qubit using gated pulse sequences with X and Z rotations occurring within a fast operation time of 300 ps. This control is used to completely map out the surface of the Bloch sphere in a single phase-space plot that is subsequently used for state and process tomography.
The charge and spin degrees of freedom of an electron constitute natural bases for constructing quantum two level systems, or qubits, in semiconductor quantum dots. The quantum dot charge qubit offers a simple architecture and high-speed operation, but generally suffers from fast dephasing due to strong coupling of the environment to the electron’s charge. On the other hand, quantum dot spin qubits have demonstrated long coherence times, but their manipulation is often slower than desired for important future applications. This talk will present experimental progress of a ‘hybrid’ qubit, formed by three electrons in a Si/SiGe double quantum dot, which combines desirable characteristics (speed and coherence) in the past found separately in qubits based on either charge or spin degrees of freedom. Using resonant microwaves, we first discuss qubit operations near the ‘sweet spot’ for charge qubit operation. Along with fast ( >GHz) manipulation rates for any rotation axis on the Bloch sphere, we implement two independent tomographic characterization schemes in the charge qubit regime: traditional quantum process tomography (QPT) and gate set tomography (GST). We also present resonant qubit operations of the hybrid qubit performed on the same device, DC pulsed gate operations of which were recently demonstrated. We demonstrate three-axis control and the implementation of dynamic decoupling pulse sequences. Performing QPT on the hybrid qubit, we show that AC gating yields π rotation process fidelities higher than 93% for X-axis and 96% for Z-axis rotations, which demonstrates efficient quantum control of semiconductor qubits using resonant microwaves. We discuss a path forward for achieving fidelities better than the threshold for quantum error correction using surface codes.
Abstract Universal quantum computation requires high-fidelity single-qubit rotations and controlled two-qubit gates. Along with high-fidelity single-qubit gates, strong efforts have been made in developing robust two-qubit logic gates in electrically gated quantum dot systems to realise a compact and nanofabrication-compatible architecture. Here we perform measurements of state-conditional coherent oscillations of a charge qubit. Using a quadruple quantum dot formed in a Si/SiGe heterostructure, we show the first demonstration of coherent two-axis control of a double quantum dot charge qubit in undoped Si/SiGe, performing Larmor and Ramsey oscillation measurements. We extract the strength of the capacitive coupling between a pair of double quantum dots by measuring the detuning energy shift (≈75 μeV) of one double dot depending on the excess charge configuration of the other double dot. We further demonstrate that the strong capacitive coupling allows fast, state-conditional Landau–Zener–Stückelberg oscillations with a conditional π phase flip time of about 80 ps, showing a promising pathway towards multi-qubit entanglement and control in semiconductor quantum dots.
Abstract We implement resonant single qubit operations on a semiconductor hybrid qubit hosted in a three-electron Si/SiGe double quantum dot structure. By resonantly modulating the double dot energy detuning and employing electron tunnelling-based readout, we achieve fast (>100 MHz) Rabi oscillations and purely electrical manipulations of the three-electron spin states. We demonstrate universal single qubit gates using a Ramsey pulse sequence as well as microwave phase control, the latter of which shows control of an arbitrary rotation axis on the X–Y plane of the Bloch sphere. Quantum process tomography yields π rotation gate fidelities higher than 93 (96)% around the X (Z) axis of the Bloch sphere. We further show that the implementation of dynamic decoupling sequences on the hybrid qubit enables coherence times longer than 150 ns.
This thesis addresses the concept of quantum computing with semiconductor quantum dots. The basic unit of a quantum computer is a quantum mechanical two-level system, the so-called quantum bit (qubit). The qubit can be defined as the spin of an electron confined in a quantum dot or as a two-dimensional subspace of the Hilbert space for several spins. Some semiconductors have several minima in their conduction band, socalled valleys. A two-dimensional valley degree of freedom can also be considered as a qubit. In this thesis, quantum registers storing spin as well as valley qubits are described theoretically. Virtual hopping yields an exchange interaction between neighboring quantum dots, which reduces the energy of antisymmetric spin-valley states according to the Pauli principle. Considering the spin and the valley degrees of freedom of two electrons in neighboring quantum dots as qubits, the exchange interaction is a four-qubit interaction. In this thesis, it will be shown that it is, nevertheless, possible to generate a universal two-qubit gate for spin qubits or for valley qubits by combining the exchange interaction and individual single-qubit gates. The exchange interaction in this two-electron double quantum dot directly provides a universal two-qubit gate for one spin and one valley qubit as well. For this, the qubits are defined as suitable subspaces, spanned by the singlet and one triplet state of the spin and the valley states, respectively, Using those gates, arbitrary quantum operations can be performed for single-spin and single-valley qubits in the same quantum register, where in one double quantum dot the quantum states are restricted to the singlet-triplet subspace. While in this register single-spin and single-valley rotations are required, these gates are dispensable in a quantum register storing spin and valley singlet-triplet qubits. The single-qubit operations, in this case, can be provided by the exchange interaction and a gradient in the energy splitting of spin and valley states when the spin qubit is stored in a double quantum dot with spin degrees of freedom only and when the spin states in the double quantum dot which stores the valley qubit are polarized. For providing the two-qubit gate, the spin and the valley qubits need to be stored in the same double quantum dot. The crucial task for this register is to interchange the spin of a spin-only and a spin-valley quantum dot in order to switch between the single-qubit and the two-qubit operation mode. This interchanging of the spin can be achieved by a valley-depending virtual hopping between the quantum dots. Furthermore, echo sequences for a so-called exchange-only qubit are considered. An exchange-only qubit is defined as a subspace in a system of three electron spins in a triple quantum dot. An inhomogeneous magnetic field, which may be caused by nuclear spins in the semiconductor, can lead to decoherence and leakage, i.e., the state might leave the qubit subspace. Suppressing this effect by an echo sequence which consists of pulses interchanging neighboring spin states, so-called SWAP gates, was proposed. Controllability over these quantum operations is provided via the exchange interaction. In this thesis, the performance of different such sequences is investigated. The analysis shows that optimization strategies developed for single spin echoes can be adapted for the three spin system. The echo sequences can be different in their order of applied SWAP gates interchanging the spins in the first and second dots or in the second and third dots. The noise suppression performance depends slightly on this order of SWAP gates. For two spins in a double quantum dot a scheme for quantum state tomography is presented. The corresponding measurement operators are constructed from a set of mutually unbiased bases of the four-dimensional two-qubit Hilbert space. These measurements are represented by short sequences of no more than three elementary quantum gates and projective measurements by the well-established spin-to-charge conversion.
We devise a platform for noise-resistant quantum computing using the valley degree of freedom of Si quantum dots. The qubit is encoded in two polarized (1,1) spin-triplet states with different valley compositions in a double quantum dot, with a Zeeman field enabling unambiguous initialization. A top gate gives a difference in the valley splitting between the dots, allowing controllable interdot tunneling between opposite valley eigenstates, which enables one-qubit rotations. Two-qubit operations rely on a stripline resonator, and readout on charge sensing. Sensitivity to charge and spin fluctuations is determined by intervalley processes and is greatly reduced as compared to conventional spin and charge qubits. We describe a valley echo for further noise suppression.
While bulk silicon has long been understood to exhibit relatively weak spin-orbit coupling (SOC), confinement of electrons to quantum dots (QDs) at a silicon heterointerface results in significantly larger SOC. This is a concern for electron spin qubit performance, as intravalley and intervalley SOC can significantly perturb the operation of electron spin qubits. While these interactions can be harnessed to drive coherent rotations in a singlet-triplet qubit, coupling to low-lying excited valley states can lead to undesirable spin relaxation when valley splitting is on resonance with the Zeeman energy. In this work, we measure the angular dependence of the interfacial spin-orbit interaction as a function of the direction and magnitude of an applied external magnetic field in SiMOS and Si/SiGe heterostructures, two common material platforms for silicon spin qubits. We construct a physical model that accurately infers intra- and inter-valley SOC physics from fits to the data, allowing for a direct comparison between these two material systems. For the devices measured we find that, while the g-factor differences are comparable, the SiMOS QDs exhibit an order of magnitude larger spin-valley coupling than for Si/SiGe. Moreover, we find that the angular dependence of the spin-valley coupling is similar for both devices, with similar magnetic field orientations minimizing the spin-valley coupling. Our work points towards operational schemes for optimizing spin-valley coupling to avoid or exploit this mechanism for qubit operation.