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Bulletin of the American Physical Society

SiGe HBT cryogenic preamplification for higher bandwidth donor spin read-out

Matthew Curry, Stephen M Carr, Greg Ten-Eyck, Joel R. Wendt, Tammy C. Pluym, Michael P Lilly, Malcolm S. Carroll

Published Mar 6, 2014• 0 citations
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We examine a silicon-germanium heterojunction bipolar transistor (HBT) for cryogenic pre-amplification of a single electron transistor (SET). The SET current modulates the base current of the HBT directly. The HBT-SET circuit is immersed in liquid helium, and its frequency response from low frequency to several MHz is measured. The current gain and the noise spectrum with the HBT result in a signal-to-noise-ratio (SNR) that is a factor of 10–100 larger than without the HBT at lower frequencies. The transition frequency defined by SNR = 1 has been extended by as much as a factor of 10 compared to without the HBT amplification. The power dissipated by the HBT cryogenic pre-amplifier is approximately 5 nW to 5 μW for the investigated range of operation. The circuit is also operated in a single electron charge read-out configuration in the time-domain as a proof-of-principle demonstration of the amplification approach for single spin read-out.

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Cryogenic Device Characterization and Wideband Receiver Design for Large-scale Monolithic Quantum Processors

Utku Alakuşu

This thesis proposes a pathway to realizing large-scale quantum computing integrated circuits based on the monolithic integration of high-temperature (1–4 K) semiconductor qubits with their associated control and readout circuitry. High-frequency device characterization was performed on production 22-nm FDSOI technology at room and cryogenic temperatures (down to 3.3 K) to inform a cryogenic circuit design methodology in the absence of low-temperature device models. The methodology was demonstrated with a TIA qubit-readout chain that was, for the first time, monolithically integrated with electron and hole quantum dot structures. The prospects of FDSOI SiGe BiCMOS technology would enable similar integration with higher performance HBT devices. As a first step, design of a 240-GHz direct conversion I-Q receiver is showcased in 55-nm SiGe BiCMOS, intended for frequency-division multiplexed readout of many qubits. The measured IF-bandwidth of 59 GHz makes it suitable for high data-rate communication and large-scale quantum processors.

•Mar 1, 2021•1 citation
We examine a silicon-germanium heterojunction bipolar transistor (HBT) for cryogenic pre-amplification of a single electron transistor (SET). The SET current modulates the base current of the HBT directly. The HBT-SET circuit is immersed in liquid helium, and its frequency response from low frequency to several MHz is measured. The current gain and the noise spectrum with the HBT result in a signal-to-noise-ratio (SNR) that is a factor of 10–100 larger than without the HBT at lower frequencies. The transition frequency defined by SNR = 1 has been extended by as much as a factor of 10 compared to without the HBT amplification. The power dissipated by the HBT cryogenic pre-amplifier is approximately 5 nW to 5 μW for the investigated range of operation. The circuit is also operated in a single electron charge read-out configuration in the time-domain as a proof-of-principle demonstration of the amplification approach for single spin read-out.
This thesis proposes a pathway to realizing large-scale quantum computing integrated circuits based on the monolithic integration of high-temperature (1–4 K) semiconductor qubits with their associated control and readout circuitry. High-frequency device characterization was performed on production 22-nm FDSOI technology at room and cryogenic temperatures (down to 3.3 K) to inform a cryogenic circuit design methodology in the absence of low-temperature device models. The methodology was demonstrated with a TIA qubit-readout chain that was, for the first time, monolithically integrated with electron and hole quantum dot structures. The prospects of FDSOI SiGe BiCMOS technology would enable similar integration with higher performance HBT devices. As a first step, design of a 240-GHz direct conversion I-Q receiver is showcased in 55-nm SiGe BiCMOS, intended for frequency-division multiplexed readout of many qubits. The measured IF-bandwidth of 59 GHz makes it suitable for high data-rate communication and large-scale quantum processors.