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Bulletin of the American Physical Society

Current-Biased SET-HBT Cryogenic Preamplifier for High-Fidelity Single-Shot Spin Readout

Matthew Curry, Andrew M. Mounce, Troy D. England, Ron Manginell, Joel R. Wendt, Tammy C. Pluym, Stephen M Carr, Malcolm S. Carroll

Published Mar 7, 2018• 0 citations
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Abstract High-fidelity single-shot readout of spin qubits requires distinguishing states much faster than the T 1 time of the spin state. One approach to improving readout fidelity and bandwidth (BW) is cryogenic amplification, where the signal from the qubit is amplified before noise sources are introduced and room-temperature amplifiers can operate at lower gain and higher BW. We compare the performance of two cryogenic amplification circuits: a current-biased heterojunction bipolar transistor circuit (CB-HBT), and an AC-coupled HBT circuit (AC-HBT). Both circuits are mounted on the mixing-chamber stage of a dilution refrigerator and are connected to silicon metal oxide semiconductor (Si-MOS) quantum dot devices on a printed circuit board (PCB). The power dissipated by the CB-HBT ranges from 0.1 to 1 μ W whereas the power of the AC-HBT ranges from 1 to 20 μ W. Referred to the input, the noise spectral density is low for both circuits, in the 15 to 30 fA/ $$\sqrt{{\bf{Hz}}}$$ Hz range. The charge sensitivity for the CB-HBT and AC-HBT is 330 μ e/ $$\sqrt{{\bf{Hz}}}$$ Hz and 400 μ e/ $$\sqrt{{\bf{Hz}}}$$ Hz , respectively. For the single-shot readout performed, less than 10 μ s is required for both circuits to achieve bit error rates below 10 −3 , which is a putative threshold for quantum error correction.

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Single-Shot Readout Performance of Two Heterojunction-Bipolar-Transistor Amplification Circuits at Millikelvin Temperatures

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High-fidelity single-shot readout of spin qubits requires distinguishing states much faster than the T1 time of the spin state. One approach to improving readout fidelity and bandwidth (BW) is cryogenic amplification, where the signal from the qubit is amplified before noise sources are introduced and room-temperature amplifiers can operate at lower gain and higher BW. We compare the performance of two cryogenic amplification circuits: a current-biased heterojunction bipolar transistor circuit (CB-HBT), and an AC-coupled HBT circuit (AC-HBT). Both circuits are mounted on the mixing-chamber stage of a dilution refrigerator and are connected to silicon metal oxide semiconductor (Si-MOS) quantum dot devices on a printed circuit board (PCB). The power dissipated by the CB-HBT ranges from 0.1 to 1 μW whereas the power of the AC-HBT ranges from 1 to 20 μW. Referred to the input, the noise spectral density is low for both circuits, in the 15 to 30 fA/$\sqrt{\textrm{Hz}}$ range. The charge sensitivity for the CB-HBT and AC-HBT is 330 μe/$\sqrt{\textrm{Hz}}$ and 400 μe/$\sqrt{\textrm{Hz}}$, respectively. For the single-shot readout performed, less than 10 μs is required for both circuits to achieve bit error rates below $10^{-3}$, which is a putative threshold for quantum error correction.

arXiv:1901.04570•Jan 14, 2019•2 citations
Abstract High-fidelity single-shot readout of spin qubits requires distinguishing states much faster than the T 1 time of the spin state. One approach to improving readout fidelity and bandwidth (BW) is cryogenic amplification, where the signal from the qubit is amplified before noise sources are introduced and room-temperature amplifiers can operate at lower gain and higher BW. We compare the performance of two cryogenic amplification circuits: a current-biased heterojunction bipolar transistor circuit (CB-HBT), and an AC-coupled HBT circuit (AC-HBT). Both circuits are mounted on the mixing-chamber stage of a dilution refrigerator and are connected to silicon metal oxide semiconductor (Si-MOS) quantum dot devices on a printed circuit board (PCB). The power dissipated by the CB-HBT ranges from 0.1 to 1 μ W whereas the power of the AC-HBT ranges from 1 to 20 μ W. Referred to the input, the noise spectral density is low for both circuits, in the 15 to 30 fA/ Hz\sqrt{{\bf{Hz}}}Hz​ Hz range. The charge sensitivity for the CB-HBT and AC-HBT is 330 μ e/ Hz\sqrt{{\bf{Hz}}}Hz​ Hz and 400 μ e/ Hz\sqrt{{\bf{Hz}}}Hz​ Hz , respectively. For the single-shot readout performed, less than 10 μ s is required for both circuits to achieve bit error rates below 10 −3 , which is a putative threshold for quantum error correction.
High-fidelity single-shot readout of spin qubits requires distinguishing states much faster than the T1 time of the spin state. One approach to improving readout fidelity and bandwidth (BW) is cryogenic amplification, where the signal from the qubit is amplified before noise sources are introduced and room-temperature amplifiers can operate at lower gain and higher BW. We compare the performance of two cryogenic amplification circuits: a current-biased heterojunction bipolar transistor circuit (CB-HBT), and an AC-coupled HBT circuit (AC-HBT). Both circuits are mounted on the mixing-chamber stage of a dilution refrigerator and are connected to silicon metal oxide semiconductor (Si-MOS) quantum dot devices on a printed circuit board (PCB). The power dissipated by the CB-HBT ranges from 0.1 to 1 μW whereas the power of the AC-HBT ranges from 1 to 20 μW. Referred to the input, the noise spectral density is low for both circuits, in the 15 to 30 fA/Hz\sqrt{\textrm{Hz}}Hz​ range. The charge sensitivity for the CB-HBT and AC-HBT is 330 μe/Hz\sqrt{\textrm{Hz}}Hz​ and 400 μe/Hz\sqrt{\textrm{Hz}}Hz​, respectively. For the single-shot readout performed, less than 10 μs is required for both circuits to achieve bit error rates below 10−310^{-3}10−3, which is a putative threshold for quantum error correction.