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Acta Physica Sinica

High polarization properties of single-photon emission from anisotropic InGaAs quantum dots

Huijun Zhou, Mu-Tian Cheng, Liu Shao-Ding, Qu‐Quan Wang, Mingsheng Zhan, Qi-Kun Xue, (1)武汉大学物理系，武汉 430072; (2)武汉大学物理系，武汉 430072;中国科学院物理研究所，国际量子结构中心，北京 100080; (3)中国科学院武汉物理与数学研究所，武汉 430071; (4)中国科学院物理研究所，国际量子结构中心，北京 100080

Published Jan 1, 2005• 1 citation
Publisher

Abstract

The high-polarized single-photon emission in single anisotropic InGaAs quantum d ots excited by linear pulse excitation was discussed. The expression of the pola rization and cross relaxation between two orthogonal eigenstates was given. It w as revealed that the cross relaxation increased with intensity of the excitation , which resulted in the decrease of polarization factor with the input pulse a rea.

DOI
10.7498/aps.54.4141

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The high-polarized single-photon emission in single anisotropic InGaAs quantum d ots excited by linear pulse excitation was discussed. The expression of the pola rization and cross relaxation between two orthogonal eigenstates was given. It w as revealed that the cross relaxation increased with intensity of the excitation , which resulted in the decrease of polarization factor with the input pulse a rea.
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Based on the generating function approach developed recently, the theoretical study of the photon emission statistics in single InGaAs∕GaAs quantum dots is presented. We show the X- and Y-polarized photon emission statistics, the joint probabilities and marginal probabilities of V-type three-level system in single quantum dots driven by single pulse and a pair of pulses, respectively. The first moment confirm known experimental results while the Mandel’s Q parameters results display complex behaviors.