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Superconductor Science and Technology

Noise of dc-SQUIDs with planar sub-micrometer Nb/HfTi/Nb junctions

Joern Beyer, M Klemm, Jan-Hendrik Storm, Oliver Kieler, Thomas Weimann, Viacheslav Morosh

Published Jul 6, 2015• 5 citations
Publisher

Abstract

Abstract We have fabricated Nb-based dc-SQUIDs with sub-micrometer planar Nb/HfTi/Nb junctions in order to investigate their noise performance. The SQUIDs are of simple coplanar design, their nominal inductance is ca. 15 pH. Electron beam lithography and chemical-mechanical polishing have been used to realize junctions with cross sections areas as low as about 100 × 100 nm 2 . The SQUIDs exhibit pronounced excess noise increasing towards lower frequencies. This apparent flux noise arises from fluctuations of the junction critical currents or resistances. The Nb/HfTi/Nb junction critical currents are found to be strongly temperature dependent. Upon cooling below ca. 4 K the SQUIDs start to show current–voltage characteristics with negative differential resistances, and their flux noise increases significantly. Estimation of the HfTi barrier electron temperature indicates that the degradation of the SQUID properties towards lower temperature is caused by self-heating effects.

DOI
10.1088/0953-2048/28/8/085011

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Abstract We have fabricated Nb-based dc-SQUIDs with sub-micrometer planar Nb/HfTi/Nb junctions in order to investigate their noise performance. The SQUIDs are of simple coplanar design, their nominal inductance is ca. 15 pH. Electron beam lithography and chemical-mechanical polishing have been used to realize junctions with cross sections areas as low as about 100 × 100 nm 2 . The SQUIDs exhibit pronounced excess noise increasing towards lower frequencies. This apparent flux noise arises from fluctuations of the junction critical currents or resistances. The Nb/HfTi/Nb junction critical currents are found to be strongly temperature dependent. Upon cooling below ca. 4 K the SQUIDs start to show current–voltage characteristics with negative differential resistances, and their flux noise increases significantly. Estimation of the HfTi barrier electron temperature indicates that the degradation of the SQUID properties towards lower temperature is caused by self-heating effects.
The noise characteristics at low frequencies are studied for various planar dc SQUIDs made of junctions with different barrier materials of a-Si, aluminum oxide, and niobium oxide. It is found that fluctuations of the parameters of individual junctions contribute to the flux noise of the SQUIDs in a magnitude of the same order with the apparent flux noise. The magnitude of the flux noise due to the parameter fluctuations depends on the barrier material and on the inductance parameter βL . We have observed a telegraph noise in the voltage time trace and a Lorentzian in the voltage power spectrum for a current-biased SQUID. As a source of the parameter fluctuations, capture and emission of electrons at the trapping sites in the barrier are indicated.
We analyze electric transport and noise properties at 4.2 K of self-shunted superconductor-normal metal-superconductor (SNS) sandwich-type Josephson junctions, comprising Nb\mathrm{Nb}Nb as the superconductor and Hf\mathrm{Hf}Hf-Ti\mathrm{Ti}Ti as the normal conducting material, with lateral dimensions down to approximately 808080 nm. The junctions are fabricated with an optimized multilayer Nb\mathrm{Nb}Nb technology based on nanopatterning by electron-beam lithography and chemical-mechanical polishing. The dependence of transport properties on the junction geometry (lateral size and barrier thickness ${d}_{\mathrm{Hf}\mathrm{\ensuremath{-}}\mathrm{Ti}}$) is studied, yielding a characteristic voltage Vc{V}_{c}Vc​ up to approximately $100\phantom{\rule{0.2em}{0ex}}\ensuremath{\mu}\mathrm{V}$ for the smallest ${d}_{\mathrm{Hf}\mathrm{\ensuremath{-}}\mathrm{Ti}}=17$ nm. The observed small hysteresis in the current-voltage curves of devices with high Vc{V}_{c}Vc​ and large size can be attributed to self-heating of the junctions and fitted with an extended version of the resistively shunted junction model. Measurements of voltage noise of single junctions are consistent with the model including self-heating effects. The potential of our technology for further miniaturization of nanoscale superconducting quantum interference devices and for the improvement of their performance is discussed.
Tunnel-junction dc SQUIDs are being fabricated from Nb films using electron-beam lithography to define linewidths as small as 0.5 μm. The barriers in the Nb-NbOx-Nb junctions are grown in an oxygen plasma discharge, and the Pd2Si resistive shunts are formed by annealing Pd on the Si substrates. These devices have excellent storage and recycling properties. At a measurement frequency of 40 kHz, a SQUID with an inductance of about 1 nH, a critical current of about 4 μA, and a parallel shunt resistance of about 15 Ω had an intrinsic energy resolution of 2.5×10−32 J Hz−1 at 4.2 K and 1.1×10−32 J Hz−1 at 1.6 K, in good agreement with a model of the dc SQUID.
The authors have designed, fabricated and tested all-refractory DC SQUIDs in Nb-Al/sub 2/O/sub 3/-Nb trilayer technology that have noise performance comparable to the best previously reported for any technology. A variety of SQUID designs were incorporated as part of a trilayer process development test vehicle. SQUID inductance, junction area, and resistive shunt geometry were varied in matrix fashion to give SQUIDs with near-optimum parameter values for a factor of five range in Josephson current density and shunt sheet resistance. The devices were fabricated using a selective niobium anodization with a minimum feature size of 2 mu m. The base electrode and Nb wiring were patterned with dry etching, and the junction areas were defined by anodization: the Ti resistors were patterned with a lift-off process. Current density on different wafers was varied from 400 to 1000 A/cm/sup 2/ with typical junction V/sub m/'s of 60 mV. The shunt sheet resistance was varied in the 1-5- Omega / Square Operator range. The noise was measured with an RF SQUID direct small-signal readout scheme. A 50-pH SQUID with 3- mu m/sup 2/, 16- mu A junctions and 14- Omega shunt resistors was shown to have an ideally low white noise of 1*10/sup -13/ Phi /sub 0//sup 2//Hz, a white to 1/f crossover frequency at 7 Hz, and a noise level less than 6*10/sup -12/ Phi /sub 0//sup 2//Hz at 0.1 Hz.
We have fabricated and characterized the noise performance of well-coupled Nb-Pb alloy edge junction dc superconducting quantum interference devices (SQUIDs) with a resistively shunted inductance. The extra damping resistor removes the resonances in the current-voltage characteristics resulting in a very low value of the extrinsic energy sensitivity in flux-locked-loop operation. Numerical simulations, with the junction capacitance included, indicate that the damping resistance does not degrade noise performance until it is significantly less than the junction-shunting resistance. We also tested different SQUID designs and demonstrated that a large SQUID inductance, proposed earlier to be desirable when resistively shunted, can seriously affect the low-frequency flux noise.
The design, fabrication, and noise properties of an ultra-low-noise tunnel junction dc SQUID (superconducting quantum interference device) are presented. The two resistively shunted Pb-alloy tunnel junctions are each 3.6 μm diam. The SQUID has an inductance L of ≈11 pH, a critical current per junction, I0 of ≈100 μA, and a resistance per shunt R of ≈2 Ω. At 2.3 K, eI0R≈kBT, and simple theory predicts that the minimum intrinsic energy sensitivity should be ≈2h. The actual minimum value of the measured high-frequency (70 kHz) flux noise at 4.2 K is φn=1.3×10−7φ0 Hz−1/2. This corresponds to an intrinsic energy sensitivity, φ2n/2L, of 3.2×10−33 J Hz−1 or 5h. Lowering the bath temperature to 1.8 K gave no improvement in performance.