Challenges
Datasets
Workspaces
Papers
Discussions
Leaderboard
Log inSign up
Challenges
Datasets
Workspaces
Papers
Discussions
Leaderboard
Blog
Job Board
Q3AS

© 2026 Aqora Quantum S.A.S.

TermsPrivacyLegal Notice

IEEE Transactions on Magnetics

Low noise DC SQUIDs fabricated in Nb-Al/sub 2/O/sub 3/-Nb trilayer technology

M. B. Ketchen, Manjul Bhushan, Steven B. Kaplan, W. J. Gallagher

Published Mar 1, 1991• 24 citations
Publisher

Abstract

The authors have designed, fabricated and tested all-refractory DC SQUIDs in Nb-Al/sub 2/O/sub 3/-Nb trilayer technology that have noise performance comparable to the best previously reported for any technology. A variety of SQUID designs were incorporated as part of a trilayer process development test vehicle. SQUID inductance, junction area, and resistive shunt geometry were varied in matrix fashion to give SQUIDs with near-optimum parameter values for a factor of five range in Josephson current density and shunt sheet resistance. The devices were fabricated using a selective niobium anodization with a minimum feature size of 2 mu m. The base electrode and Nb wiring were patterned with dry etching, and the junction areas were defined by anodization: the Ti resistors were patterned with a lift-off process. Current density on different wafers was varied from 400 to 1000 A/cm/sup 2/ with typical junction V/sub m/'s of 60 mV. The shunt sheet resistance was varied in the 1-5- Omega / Square Operator range. The noise was measured with an RF SQUID direct small-signal readout scheme. A 50-pH SQUID with 3- mu m/sup 2/, 16- mu A junctions and 14- Omega shunt resistors was shown to have an ideally low white noise of 1*10/sup -13/ Phi /sub 0//sup 2//Hz, a white to 1/f crossover frequency at 7 Hz, and a noise level less than 6*10/sup -12/ Phi /sub 0//sup 2//Hz at 0.1 Hz.

DOI
10.1109/20.133992

Related papers

Excess low-frequency flux noise in dc SQUIDs

M. E. Huber, Michael W. Cromar, Ronald H. Ono

We have fabricated dc superconducting quantum interference devices (SQUIDs) incorporating Nb/Al-oxide/Nb Josephson junctions in both stripline and washer geometries. Low-frequency noise in excess of that predicted by the resistively-shunted junction model is present in both geometries and is demonstrated to be flux noise. This flux noise is not environmental. Improvements in fabrication processing over the past four years have reduced the level of this flux noise. SQUIDs are now fabricated with PdAu resistors, Nb wiring layers, and SiO/sub 2/ interlayer dielectric. In our best well-coupled SQUIDs, the white-noise energy sensitivity is 5/spl times/10/sup -31/ J/spl middot/s, with a 1/f knee below 0.1 Hz. We believe further reduction in the flux noise might be obtained with the use of on-chip flux shielding and/or trapping structures.

IEEE Transactions on Applied Superconductivity•Jun 1, 1997•5 citations

All-Nb low-noise dc SQUID with 1-μm tunnel junctions

Richard F. Voss, Robert B. Laibowitz, Stanley I. Raider +1 more

Tunnel-junction dc SQUIDs are being fabricated from Nb films using electron-beam lithography to define linewidths as small as 0.5 μm. The barriers in the Nb-NbOx-Nb junctions are grown in an oxygen plasma discharge, and the Pd2Si resistive shunts are formed by annealing Pd on the Si substrates. These devices have excellent storage and recycling properties. At a measurement frequency of 40 kHz, a SQUID with an inductance of about 1 nH, a critical current of about 4 μA, and a parallel shunt resistance of about 15 Ω had an intrinsic energy resolution of 2.5×10−32 J Hz−1 at 4.2 K and 1.1×10−32 J Hz−1 at 1.6 K, in good agreement with a model of the dc SQUID.

Journal of Applied Physics•Apr 1, 1980•31 citations

An ultra-low-noise tunnel junction dc SQUID

M. B. Ketchen, Richard F. Voss

The design, fabrication, and noise properties of an ultra-low-noise tunnel junction dc SQUID (superconducting quantum interference device) are presented. The two resistively shunted Pb-alloy tunnel junctions are each 3.6 μm diam. The SQUID has an inductance L of ≈11 pH, a critical current per junction, I0 of ≈100 μA, and a resistance per shunt R of ≈2 Ω. At 2.3 K, eI0R≈kBT, and simple theory predicts that the minimum intrinsic energy sensitivity should be ≈2h. The actual minimum value of the measured high-frequency (70 kHz) flux noise at 4.2 K is φn=1.3×10−7φ0 Hz−1/2. This corresponds to an intrinsic energy sensitivity, φ2n/2L, of 3.2×10−33 J Hz−1 or 5h. Lowering the bath temperature to 1.8 K gave no improvement in performance.

Applied Physics Letters•Nov 15, 1979•61 citations

Performance of dc SQUIDs with resistively shunted inductance

Vittorio Foglietti, W. J. Gallagher, M. B. Ketchen +3 more

We have fabricated and characterized the noise performance of well-coupled Nb-Pb alloy edge junction dc superconducting quantum interference devices (SQUIDs) with a resistively shunted inductance. The extra damping resistor removes the resonances in the current-voltage characteristics resulting in a very low value of the extrinsic energy sensitivity in flux-locked-loop operation. Numerical simulations, with the junction capacitance included, indicate that the damping resistance does not degrade noise performance until it is significantly less than the junction-shunting resistance. We also tested different SQUID designs and demonstrated that a large SQUID inductance, proposed earlier to be desirable when resistively shunted, can seriously affect the low-frequency flux noise.

Applied Physics Letters•Oct 2, 1989•45 citations

Nb/AlOx/Nb trilayer process for the fabrication of submicron Josephson junctions and low-noise dc SQUIDs

Manjul Bhushan, E. M. Macedo

A trilayer deposition process for making high quality all-refractory Nb/AlOx/Nb Josephson junctions is described. The sputtering parameters were optimized to deposit very uniform Al films, less than 5 nm in thickness. We found that it was essential to keep the substrate temperature below 40 °C during Al deposition but not during Nb depositions. Rapid anodization of the Nb counterelectrode allowed us to use positive photoresist as an anodization mask even for submicron geometries. The dc superconducting quantum interference devices made with this process have the lowest intrinsic energy sensitivity reported to date for an all-refractory technology.

Applied Physics Letters•Mar 25, 1991•42 citations

Design dependence of noise in Nb-based dc SQUIDs

Viatcheslav Zakosarenko, Matthias Schmelz, J. Kunert +2 more

Abstract Noise in superconducting quantum interference devices (dc SQUIDs) with different design, based on Nb/AlO x /Nb technology, has been systematically measured at temperature T = 4.2 K. We demonstrate that for all our devices the power spectral density of the white noise (above a frequency of about 1 kHz) is determined by the shunt resistors, reaching about 5 times Planck’s constant. The low-frequency noise level was measured for washer- and multi-loop-type SQUIDs with systematically varied effective area, SQUID loop perimeter, and inductance. We show that at 1 Hz the noise spectral density is approximately 40 times higher than the white noise level and its scaling with washer width and effective area is negligible. These results are incompatible with several models of the flicker noise source. Possible origins of this noise are discussed.

Superconductor Science and Technology•Jun 10, 2024•2 citations
The authors have designed, fabricated and tested all-refractory DC SQUIDs in Nb-Al/sub 2/O/sub 3/-Nb trilayer technology that have noise performance comparable to the best previously reported for any technology. A variety of SQUID designs were incorporated as part of a trilayer process development test vehicle. SQUID inductance, junction area, and resistive shunt geometry were varied in matrix fashion to give SQUIDs with near-optimum parameter values for a factor of five range in Josephson current density and shunt sheet resistance. The devices were fabricated using a selective niobium anodization with a minimum feature size of 2 mu m. The base electrode and Nb wiring were patterned with dry etching, and the junction areas were defined by anodization: the Ti resistors were patterned with a lift-off process. Current density on different wafers was varied from 400 to 1000 A/cm/sup 2/ with typical junction V/sub m/'s of 60 mV. The shunt sheet resistance was varied in the 1-5- Omega / Square Operator range. The noise was measured with an RF SQUID direct small-signal readout scheme. A 50-pH SQUID with 3- mu m/sup 2/, 16- mu A junctions and 14- Omega shunt resistors was shown to have an ideally low white noise of 110/sup -13/ Phi /sub 0//sup 2//Hz, a white to 1/f crossover frequency at 7 Hz, and a noise level less than 610/sup -12/ Phi /sub 0//sup 2//Hz at 0.1 Hz.
We have fabricated dc superconducting quantum interference devices (SQUIDs) incorporating Nb/Al-oxide/Nb Josephson junctions in both stripline and washer geometries. Low-frequency noise in excess of that predicted by the resistively-shunted junction model is present in both geometries and is demonstrated to be flux noise. This flux noise is not environmental. Improvements in fabrication processing over the past four years have reduced the level of this flux noise. SQUIDs are now fabricated with PdAu resistors, Nb wiring layers, and SiO/sub 2/ interlayer dielectric. In our best well-coupled SQUIDs, the white-noise energy sensitivity is 5/spl times/10/sup -31/ J/spl middot/s, with a 1/f knee below 0.1 Hz. We believe further reduction in the flux noise might be obtained with the use of on-chip flux shielding and/or trapping structures.
Tunnel-junction dc SQUIDs are being fabricated from Nb films using electron-beam lithography to define linewidths as small as 0.5 μm. The barriers in the Nb-NbOx-Nb junctions are grown in an oxygen plasma discharge, and the Pd2Si resistive shunts are formed by annealing Pd on the Si substrates. These devices have excellent storage and recycling properties. At a measurement frequency of 40 kHz, a SQUID with an inductance of about 1 nH, a critical current of about 4 μA, and a parallel shunt resistance of about 15 Ω had an intrinsic energy resolution of 2.5×10−32 J Hz−1 at 4.2 K and 1.1×10−32 J Hz−1 at 1.6 K, in good agreement with a model of the dc SQUID.
The design, fabrication, and noise properties of an ultra-low-noise tunnel junction dc SQUID (superconducting quantum interference device) are presented. The two resistively shunted Pb-alloy tunnel junctions are each 3.6 μm diam. The SQUID has an inductance L of ≈11 pH, a critical current per junction, I0 of ≈100 μA, and a resistance per shunt R of ≈2 Ω. At 2.3 K, eI0R≈kBT, and simple theory predicts that the minimum intrinsic energy sensitivity should be ≈2h. The actual minimum value of the measured high-frequency (70 kHz) flux noise at 4.2 K is φn=1.3×10−7φ0 Hz−1/2. This corresponds to an intrinsic energy sensitivity, φ2n/2L, of 3.2×10−33 J Hz−1 or 5h. Lowering the bath temperature to 1.8 K gave no improvement in performance.
We have fabricated and characterized the noise performance of well-coupled Nb-Pb alloy edge junction dc superconducting quantum interference devices (SQUIDs) with a resistively shunted inductance. The extra damping resistor removes the resonances in the current-voltage characteristics resulting in a very low value of the extrinsic energy sensitivity in flux-locked-loop operation. Numerical simulations, with the junction capacitance included, indicate that the damping resistance does not degrade noise performance until it is significantly less than the junction-shunting resistance. We also tested different SQUID designs and demonstrated that a large SQUID inductance, proposed earlier to be desirable when resistively shunted, can seriously affect the low-frequency flux noise.
A trilayer deposition process for making high quality all-refractory Nb/AlOx/Nb Josephson junctions is described. The sputtering parameters were optimized to deposit very uniform Al films, less than 5 nm in thickness. We found that it was essential to keep the substrate temperature below 40 °C during Al deposition but not during Nb depositions. Rapid anodization of the Nb counterelectrode allowed us to use positive photoresist as an anodization mask even for submicron geometries. The dc superconducting quantum interference devices made with this process have the lowest intrinsic energy sensitivity reported to date for an all-refractory technology.
Abstract Noise in superconducting quantum interference devices (dc SQUIDs) with different design, based on Nb/AlO x /Nb technology, has been systematically measured at temperature T = 4.2 K. We demonstrate that for all our devices the power spectral density of the white noise (above a frequency of about 1 kHz) is determined by the shunt resistors, reaching about 5 times Planck’s constant. The low-frequency noise level was measured for washer- and multi-loop-type SQUIDs with systematically varied effective area, SQUID loop perimeter, and inductance. We show that at 1 Hz the noise spectral density is approximately 40 times higher than the white noise level and its scaling with washer width and effective area is negligible. These results are incompatible with several models of the flicker noise source. Possible origins of this noise are discussed.