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Journal of Applied Physics

All-Nb low-noise dc SQUID with 1-μm tunnel junctions

Richard F. Voss, Robert B. Laibowitz, Stanley I. Raider, John L. Clarke

Published Apr 1, 1980• 31 citations
Publisher

Abstract

Tunnel-junction dc SQUIDs are being fabricated from Nb films using electron-beam lithography to define linewidths as small as 0.5 μm. The barriers in the Nb-NbOx-Nb junctions are grown in an oxygen plasma discharge, and the Pd2Si resistive shunts are formed by annealing Pd on the Si substrates. These devices have excellent storage and recycling properties. At a measurement frequency of 40 kHz, a SQUID with an inductance of about 1 nH, a critical current of about 4 μA, and a parallel shunt resistance of about 15 Ω had an intrinsic energy resolution of 2.5×10−32 J Hz−1 at 4.2 K and 1.1×10−32 J Hz−1 at 1.6 K, in good agreement with a model of the dc SQUID.

DOI
10.1063/1.327869

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Superconductor Science and Technology•Jul 6, 2015•5 citations
Tunnel-junction dc SQUIDs are being fabricated from Nb films using electron-beam lithography to define linewidths as small as 0.5 μm. The barriers in the Nb-NbOx-Nb junctions are grown in an oxygen plasma discharge, and the Pd2Si resistive shunts are formed by annealing Pd on the Si substrates. These devices have excellent storage and recycling properties. At a measurement frequency of 40 kHz, a SQUID with an inductance of about 1 nH, a critical current of about 4 μA, and a parallel shunt resistance of about 15 Ω had an intrinsic energy resolution of 2.5×10−32 J Hz−1 at 4.2 K and 1.1×10−32 J Hz−1 at 1.6 K, in good agreement with a model of the dc SQUID.
The design, fabrication, and noise properties of an ultra-low-noise tunnel junction dc SQUID (superconducting quantum interference device) are presented. The two resistively shunted Pb-alloy tunnel junctions are each 3.6 μm diam. The SQUID has an inductance L of ≈11 pH, a critical current per junction, I0 of ≈100 μA, and a resistance per shunt R of ≈2 Ω. At 2.3 K, eI0R≈kBT, and simple theory predicts that the minimum intrinsic energy sensitivity should be ≈2h. The actual minimum value of the measured high-frequency (70 kHz) flux noise at 4.2 K is φn=1.3×10−7φ0 Hz−1/2. This corresponds to an intrinsic energy sensitivity, φ2n/2L, of 3.2×10−33 J Hz−1 or 5h. Lowering the bath temperature to 1.8 K gave no improvement in performance.
The authors have designed, fabricated and tested all-refractory DC SQUIDs in Nb-Al/sub 2/O/sub 3/-Nb trilayer technology that have noise performance comparable to the best previously reported for any technology. A variety of SQUID designs were incorporated as part of a trilayer process development test vehicle. SQUID inductance, junction area, and resistive shunt geometry were varied in matrix fashion to give SQUIDs with near-optimum parameter values for a factor of five range in Josephson current density and shunt sheet resistance. The devices were fabricated using a selective niobium anodization with a minimum feature size of 2 mu m. The base electrode and Nb wiring were patterned with dry etching, and the junction areas were defined by anodization: the Ti resistors were patterned with a lift-off process. Current density on different wafers was varied from 400 to 1000 A/cm/sup 2/ with typical junction V/sub m/'s of 60 mV. The shunt sheet resistance was varied in the 1-5- Omega / Square Operator range. The noise was measured with an RF SQUID direct small-signal readout scheme. A 50-pH SQUID with 3- mu m/sup 2/, 16- mu A junctions and 14- Omega shunt resistors was shown to have an ideally low white noise of 1*10/sup -13/ Phi /sub 0//sup 2//Hz, a white to 1/f crossover frequency at 7 Hz, and a noise level less than 6*10/sup -12/ Phi /sub 0//sup 2//Hz at 0.1 Hz.
Electron-beam lithography has been used to produce ultra low noise Nb dc SQUIDs (Superconducting QUantum Interference Devices) with Josephson elements consisting of either small area tunnel junctions or very narrow variable thickness bridges (nanobridges). Detailed voltage noise and transfer function measurements have been made as a function of temperature and flux and current bias. These measurements allow a computation of the intrinsic energy resolution ε vs bias parameters as well as comparison with models of intrinsic SQUID noise. The best ε obtained was of order Planck's constant h. Moreover, the detailed characteristics of the SQUID voltage noise are in agreement with a small signal analysis that depends only on the current noise in each of the Josephson elements and measurable parameters.
Noise measurements on multiloop dc SQUIDs, fabricated with Nb-NbOx-PbAuIn and Pb-alloy Josephson tunnel junctions and well coupled with the external world by an input coil, we performed in flux locked loop mode. To achieve this task, we built a reliable low-cost control electronics to detect the voltage output of the SQUID. The results show that for multiloop dc SQUIDs with single-junction critical currents larger than 20 μA and an inductive parameter βL less than 4.5, an intrinsic white-energy spectral density of about 100h can be obtained independently of the technology used to fabricate the junctions. Furthermore, the Nb-NbOx-PbAuIn dc SQUIDs have a lower 1/f noise than the Pb-alloy ones.
All-niobium thin film planar DC SQUIDs have been fabricated, containing submicron tunnel junctions. The fabrication method using photoresist techniques is briefly described. The IcR product of the SQUIDs is 0.3 mV, the inductance 1 nH. They show no changes after repeated thermal cycling or storage over extended periods. The best intrinsic energy resolution obtained so far in a flux-locked loop configuration is 4 . 10-32J/Hz. The noise power is an order of magnitude higher than predicted from the simple RSJ model calculation.
Abstract We have fabricated Nb-based dc-SQUIDs with sub-micrometer planar Nb/HfTi/Nb junctions in order to investigate their noise performance. The SQUIDs are of simple coplanar design, their nominal inductance is ca. 15 pH. Electron beam lithography and chemical-mechanical polishing have been used to realize junctions with cross sections areas as low as about 100 × 100 nm 2 . The SQUIDs exhibit pronounced excess noise increasing towards lower frequencies. This apparent flux noise arises from fluctuations of the junction critical currents or resistances. The Nb/HfTi/Nb junction critical currents are found to be strongly temperature dependent. Upon cooling below ca. 4 K the SQUIDs start to show current–voltage characteristics with negative differential resistances, and their flux noise increases significantly. Estimation of the HfTi barrier electron temperature indicates that the degradation of the SQUID properties towards lower temperature is caused by self-heating effects.