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Conference on Lasers and Electro-Optics

Pure dephasing induced by exciton-phonon interactions in GaAs quantum dots

Hailin Wang, Xudong Fan, T. Takagahara, J. E. Cunningham

Published Nov 27, 2002• 0 citations
Publisher

Abstract

Summary form only given.We report studies of exciton dephasing in quantum dot (QD)-like islands in narrow GaAs quantum wells (QWs). Using three pulse transient four-wave mixing (FWM), we compare dephasing rates directly with population decay rates. This comparison reveals a pure dephasing process that dominates excitonic dephasing at elevated temperatures but does not involve exciton population relaxation.

DOI
10.1109/iqec.1998.680336

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Summary form only given.We report studies of exciton dephasing in quantum dot (QD)-like islands in narrow GaAs quantum wells (QWs). Using three pulse transient four-wave mixing (FWM), we compare dephasing rates directly with population decay rates. This comparison reveals a pure dephasing process that dominates excitonic dephasing at elevated temperatures but does not involve exciton population relaxation.
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