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Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE

Exciton dephasing in strain-compensated self-assembled InAs quantum dots

Junko Ishi‐Hayase, Kouichi Akahane, Naokatsu Yamamoto, Mamiko Kujiraoka, Kazuhiro Ema, Masahide Sasaki

Published Feb 9, 2006• 1 citation
Publisher

Abstract

We investigate the dephasing of excitons in InAs self-assembled quantum dots by using a transient four-wave-mixing technique. A used sample is specially designed to compensate the strain. We observe long-lived coherence of excitons at 5 K which corresponds to the dephasing time longer than a nanosecond, where the photon energy of the excitation pulse is 0.874~eV. We find that a pure dephasing due to exciton-phonon interactions dominates in the exciton dephasing rather than the population decay and the exciton-exciton interaction in the weak excitation region, by analyzing the population lifetime and the polarization-dependent dephasing time.

DOI
10.1117/12.661300

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We investigate the dephasing of excitons in InAs self-assembled quantum dots by using a transient four-wave-mixing technique. A used sample is specially designed to compensate the strain. We observe long-lived coherence of excitons at 5 K which corresponds to the dephasing time longer than a nanosecond, where the photon energy of the excitation pulse is 0.874~eV. We find that a pure dephasing due to exciton-phonon interactions dominates in the exciton dephasing rather than the population decay and the exciton-exciton interaction in the weak excitation region, by analyzing the population lifetime and the polarization-dependent dephasing time.
We investigate the dephasing mechanism of optically-induced exciton coherence in an ensemble of InAs self-assembled quantum dots (QDs) using a two-pulse photon-echo (PE) technique. The sample was fabricated on an InP (311)B substrate using strain compensation to control the emission wavelength. This technique also enabled us to fabricate a 150-layer stacked QD structure for enhancing the PE signal intensity. We show the measured decay time of PE signal intensity for resonant excitation of ground-state transition is extremely long, which corresponds to ultralong coherence times of excitons in our QDs. We confirmed that non-radiative population relaxation and pure dephasing are considerably smaller than the radiative relaxation at low temperature. Furthermore, we demonstrate the ultrafast coherent control of QD exciton polarization by changing the pulse areas (Rabi oscillations) in the PE experiment. We also propose a new scheme for implementing QD quantum memory by using the PE technique.
We measured dephasing times in InGaAlAs self-assembled quantum dots at low temperature using degenerate four-wave mixing. At 0 K, the coherence time of the quantum dots is lifetime limited, whereas at finite temperatures pure dephasing by exciton-phonon interactions governs the quantum dot coherence. The inferred homogeneous line widths are significantly smaller than the line widths usually observed in the photoluminescence from single quantum dots indicating an additional inhomogeneous broadening mechanism in the latter.
We have performed time-integrated degenerate four-wave mixing experiments in InAs/GaAs self-assembled quantum dots. The quantum dots are excited in resonance with an intersublevel transition between the valence states of the dots. The dephasing time T2{T}_{2}T2​ is deduced from the time dependence of the photon echo amplitude as a function of the delay between the two incident pulses. At low temperature, a dephasing time T2{T}_{2}T2​ of 15 ps is measured for a resonant excitation at 7.4 \ensuremath{\mu}m wavelength. This dephasing corresponds to an homogeneous broadening of the intersublevel transition of 87 \ensuremath{\mu}eV. The polarization decay time is much longer than the one observed for resonant intersubband excitations in quantum wells. The dephasing time of the intersublevel polarization exhibits only a weak temperature dependence, indicating that the dephasing is not dominated by phonon-assisted scattering mechanisms.
We report measurements of ultralong coherence in self-assembled quantum dots. Transient four-wave mixing experiments at 5 K show an average dephasing time of 372 ps, corresponding to a homogeneous linewidth of 3.5 microeV, which is significantly smaller than the linewidth observed in single-dot luminescence. Time-resolved luminescence measurements show a lifetime of the dot ground state of 800 ps, demonstrating the presence of pure dephasing at finite temperature. The homogeneous width is lifetime limited only at temperatures approaching 0 K.
The extremely long dephasing time of excitons in strain-compensated quantum dots at telecommunications wavelengths was measured using a polarization-dependent four-wave mixing technique. The use of a 150-layer-stacked structure enabled them to measure a four-wave mixing signal with a high signal-to-noise ratio, in spite of the fact that a high-sensitive heterodyne detection was not used. The large anisotropy of the dephasing time indicates the dominance of the radiative recombination process on dephasing. By simultaneously measuring the radiative lifetime using a pump-probe technique, they could directly estimate pure dephasing with an accuracy of better than 0.1μeV.