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IEEE Transactions on Applied Superconductivity

Feasibility studies of ultra-small Josephson junctions for qubits

Alexander Ya. Tzalenchuk, T. Lindström, Serge A. Charlebois, Е. А. Степанцов, Alexandre M. Zagoskin, Z. G. Ivanov, T. Claeson

Published Jun 1, 2003• 5 citations
Publisher

Abstract

Most proposed realizations of a high temperature superconductor (HTS) qubit require the use of very small Josephson junctions. The properties of bicrystal junctions are especially interesting since they make it possible to implement several types of flux qubits in a relatively simple way. We have developed a technique that allows us to produce high quality sub-micrometer junctions in a reproducible way using bicrystal technology. We have successfully fabricated and characterized a large number of YBCO junctions and SQUIDs with bridge width as small as 0.2 micrometer on 0/spl deg/-3/spl deg/, 0/spl deg/-40/spl deg/ and 0/spl deg/-45/spl deg/ bicrystal STO substrates. The properties of these junctions have been extensively examined at temperatures down to 20 mK. The effects of external magnetic fields on these structures have been investigated. Figures of merit for the proposed qubits were also extracted from these measurements.

DOI
10.1109/tasc.2003.814158

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•Jan 1, 2003•0 citations
Most proposed realizations of a high temperature superconductor (HTS) qubit require the use of very small Josephson junctions. The properties of bicrystal junctions are especially interesting since they make it possible to implement several types of flux qubits in a relatively simple way. We have developed a technique that allows us to produce high quality sub-micrometer junctions in a reproducible way using bicrystal technology. We have successfully fabricated and characterized a large number of YBCO junctions and SQUIDs with bridge width as small as 0.2 micrometer on 0/spl deg/-3/spl deg/, 0/spl deg/-40/spl deg/ and 0/spl deg/-45/spl deg/ bicrystal STO substrates. The properties of these junctions have been extensively examined at temperatures down to 20 mK. The effects of external magnetic fields on these structures have been investigated. Figures of merit for the proposed qubits were also extracted from these measurements.
Recent findings of macroscopic quantum properties in high critical temperature superconductor (HTS) Josephson junctions (JJs) point toward the need to revise the role of zero energy quasi-particles in this novel superconductor. We will discuss the possibility of designing superconducting artificial atoms in a transmon configuration to study the low energy excitation spectra of HTS. We have engineered high quality grain boundary JJs on low dielectric constant substrates. By fabricating submicron junctions, we extract values of capacitance and Josephson critical current densities that satisfy the main transmon design requirements. Moreover, the measured critical current noise power extrapolated at 1 Hz gives a dephasing time of 25 ns, which indicates that the observation of macroscopic quantum coherent effects in HTS JJ is a feasible task.
We present a fabrication scheme and testing results for epitaxial sub-micrometer Josephson junctions. The junctions are made using a high-temperature (1170 K) "via process" yielding junctions as small as 0.8 mu m in diameter by use of optical lithography. Sapphire (Al2O3) tunnel-barriers are grown on an epitaxial Re/Ti multilayer base-electrode. We have fabricated devices with both Re and Al top electrodes. While room-temperature (295 K) resistance versus area data are favorable for both types of top electrodes, the low-temperature (50 mK) data show that junctions with the Al top electrode have a much higher subgap resistance. The microwave loss properties of the junctions have been measured by use of superconducting Josephson junction qubits. The results show that high subgap resistance correlates to improved qubit performance.
Josephson tunnel junctions represent a key element in superconducting electronics and quantum circuits. For many years, shadow evaporation by means of Dolan-type bridges has been the state-of-the-art for deep sub- micrometer sized structures. Increasing demand in the number of Josephson junctions, e.g. in qubit circuits and travelling wave parametric amplifiers, requests for a wafer-scale fabrication process with precise control of junction parameters and have led to an advanced lift-off technique called Manhattan-type junction technology in recent years. Herein, we report on the development of a 100 mm wafer-scale fabrication technology for deep sub-micrometer sized Al Josephson junctions with linear dimensions down to 180 nm. The critical currentICof the junctions ranges from about 10 to 120 nA scaling with their linear dimensions. Low temperature transport measurements as well as room-temperature characterization has been used forICand process homogeneity determination of series arrays of up to 50 Josephson junctions. We discuss technology parameters such as yield, on-chip and on-wafer reproducibility of the junction's critical currents as well as main process limitations. Moreover, we present experimental results on the characterization of first transmon-type qubits fabricated using this technology.
The performance of superconducting electronic devices such as superconducting quantum bits (qubits) and superconducting quantum interference devices (SQUIDs) strongly relies on high-quality Josephson junctions (JJ) and their integration into surrounding circuit elements. Therefore, a corresponding fabrication technology should allow for the fabrication of all required elements including the JJs, inductances, capacitances and waveguides. For a long time, shadow evaporation technique was the state of the art for the implementation of sub-μ m sized JJs based on aluminum for qubits of high coherence times. Although, the use of a single lithographic step represents a major advantage of this technique. However, shadowing effects limit sample size, device complexity, and thus scalability of the circuitry. To overcome these limitations and to meet the demands of next generation scalable quantum circuits, in this work we introduce our cross -type JJ aluminum technology, where JJs are defined by the overlap of two narrow perpendicular stripes. We discuss the technological challenges, with a focus on our newly developed dry etching process for patterning of the aluminum thin film. Compared to a lift-off based process, this advanced wafer-scale fabrication technology offers a high integration density and the required design flexibility. We will present first results on cross -type aluminum JJs.
This thesis for the degree of Master of Science studies and tests the feasibility of HTS flux qubit read-out using an aluminium dc-SQUID. The feasibility is studied on a device consisting of an YBCO dc-SQUID surrounded by an aluminium dc-SQUID separated by an intermediate layer. The intermediate layer acts as insulator between the YBCO and the aluminium and as capping layer for the underlying YBCO. Each part of the device has been studied within this project.\n\nAluminium dc-SQUIDs for flux qubit read-out have been fabricated using electron beam lithography and shadow evaporation. A typical SQUID had a critical current of 56 nA and was highly under-damped. The SQUIDs were characterized below 300 mK. An intermediate layer consisting of amorphous STO, deposited at room temperature, and thermally evaporated silicon dioxide has been studied. The roughness, peak-to-valley, was found to be approximately 10 nm and the resistance was 9 kOmega\\OmegaOmega for an 360 nm thick layer of silicon dioxide and 12 kOmega\\OmegaOmega for a 500 nm thick layer at 4.2 K. YBCO SQUIDs were fabricated on STO 0o^oo/30o^oo bi-crystals using electron beam lithography and ion milling through a mask of amorphous carbon. The properties of the grain boundary junctions in the SQUIDs were unchanged when a multi-layer of amorphous STO and silicon dioxide was deposited on top of them. A SQUID that consists of 3 mu\\mumum wide junctions typically had a critical current of 1.5 mA. It was found that the insulating properties, the adhesion and the smoothness of the intermediate layer has to be improved in order to get the proposed device working.